Seokwon Lim

ORCID: 0009-0000-6085-8322
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About
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Research Areas
  • Transition Metal Oxide Nanomaterials
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Infrared Target Detection Methodologies
  • CCD and CMOS Imaging Sensors
  • Semiconductor materials and devices
  • Gas Sensing Nanomaterials and Sensors
  • MXene and MAX Phase Materials

Ajou University
2023-2024

Light-intensity selective superlinear photodetectors with ultralow dark current can provide an essential breakthrough for the development of high-performing near-sensor vision processing. However, processing is not only conceptually important device operation (given that sensors naturally exhibit linear/sublinear responses), but also to get rid massive amount data generated during object sensing and classification noisy inputs. Therefore, achieving giant photoresponse while maintaining...

10.1002/adma.202210907 article EN Advanced Materials 2023-02-06

Processing data demands volatile memory, whereas storage necessitates nonvolatile devices. Typically, during the operations, moves back and forth between them, causing an increase in energy consumption, undesired heating, von Neumann bottleneck. Therefore, overcoming these obstacles could provide essential breakthrough for on-demand in-memory processing; however, this would undoubtedly necessitate unification of both memory. Ferroelectric materials have potential such memory; yet, because...

10.1021/acsaelm.2c01448 article EN ACS Applied Electronic Materials 2023-02-10

In this study, the effect of annealing and substrate conditions on ferroelectricity undoped hafnium oxide (HfO2) was analyzed. Hafnium deposited various substrates such as platinum, titanium nitride, silicon (Pt, TiN, Si) through RF magnetron sputtering. Annealing performed in a nitrogen atmosphere at temperatures ranging from 400 to 600 °C, process lasted anywhere 1 30 min. As result, it confirmed that orthorhombic phase, main cause ferroelectricity, dominant after post-anneal °C for...

10.3390/nano14171386 article EN cc-by Nanomaterials 2024-08-25

Infrared Photodetectors In article number 2210907, Mohit Kumar, Hyungtak Seo, and co-workers report on the development of Mott material (vanadium dioxide) silicon-based integrated infrared photodetectors with giant superlinear photoresponse (exponent >18) an ultralow dark current 4.46 pA., which are then used for intensity-selective high-performance near-sensor processing reconstruction night vision patterns despite noisy inputs.

10.1002/adma.202370128 article EN Advanced Materials 2023-05-01
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