Zhengxin Li

ORCID: 0009-0001-0428-355X
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About
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Research Areas
  • 2D Materials and Applications
  • Advanced Memory and Neural Computing
  • Perovskite Materials and Applications

Shanghai University
2024

Ferroelectric memristors, a type of nonvolatile resistive switching memory, have enormous potential in applications, including information storage and neuromorphic computing. The recent focus on two-dimensional (2D) ferroelectrics highlights their significance as promising platform for the next generation functional electronic devices. Here, we report ferroelectricity exfoliated 2D α-In2Se3 flakes through piezoelectric force microscopy transport measurement. An out-of-plane is directly...

10.1021/acsaelm.4c00136 article EN ACS Applied Electronic Materials 2024-04-02
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