Wentao Yan

ORCID: 0009-0001-1434-1151
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About
Contact & Profiles
Research Areas
  • Advanced Memory and Neural Computing
  • Neuroscience and Neural Engineering
  • Photoreceptor and optogenetics research
  • CCD and CMOS Imaging Sensors
  • Transition Metal Oxide Nanomaterials
  • Neural dynamics and brain function
  • Ferroelectric and Negative Capacitance Devices

First Affiliated Hospital of Xi'an Jiaotong University
2023-2024

Xi'an Jiaotong University
2023-2024

Tianjin University of Commerce
2023

Abstract In the era of information, characterized by an exponential growth in data volume and escalating level abstraction, there has been a substantial focus on brain‐like chips, which are known for their robust processing power energy‐efficient operation. Memristors widely acknowledged as optimal electronic devices realization neuromorphic computing, due to innate ability emulate interconnection information transfer processes witnessed among neurons. This review paper focuses...

10.1002/adma.202310704 article EN Advanced Materials 2024-01-02

Abstract Benefiting from powerful logic‐computing, higher packaging density, and extremely low electricity consumption, memristors are regarded as the most promising next‐generation of electric devices capable realizing brain‐like neuromorphic computation. However, design emerging circuit based on their potential application in unconventional fields very meaningful for achieving some tasks that traditional electronic cannot accomplish. Herein, a Cu/PEDOT:PSS‐PP:PVDF/Ti structured memristor...

10.1002/adfm.202401132 article EN Advanced Functional Materials 2024-03-13

Conventional implantable electronics based on von Neumann architectures encounter significant limitations in computing and processing vast biological information due to computational bottlenecks. The memristor with integrated memory-computing low power consumption offer a promising solution overcome the bottleneck Moore's law of traditional silicon-based devices, making them most candidates for next-generation devices. In this work, highly stable an Ag/BaTiO3/MnO2/FTO structure was...

10.1016/j.mtbio.2024.101096 article EN cc-by-nc-nd Materials Today Bio 2024-05-20
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