A5024469561- ZnO doping and properties
- Thin-Film Transistor Technologies
- Gas Sensing Nanomaterials and Sensors
- Semiconductor materials and devices
- Analytical Chemistry and Sensors
- Nanowire Synthesis and Applications
- Advanced Chemical Sensor Technologies
- Transition Metal Oxide Nanomaterials
- Acoustic Wave Resonator Technologies
- Ga2O3 and related materials
- Silicon and Solar Cell Technologies
- Electronic and Structural Properties of Oxides
- Vascular anomalies and interventions
- Silicon Nanostructures and Photoluminescence
- GaN-based semiconductor devices and materials
- Cardiac Arrhythmias and Treatments
Pusan National University
2019-2024
Hallym University Medical Center
2017
Chonnam National University
2013
This paper introduces a method for improving the sensitivity to NO2 gas of p-type metal oxide semiconductor sensor. The sensor was fabricated using CuO nanowires (NWs) grown through thermal oxidation and decorated with ZnO nanoparticles (NPs) sol-gel method. heterojunction exhibited better than pristine in CuO/ZnO sensors caused decrease width hole accumulation layer (HAL) an increase initial resistance. possibility influence HAL helped improve sensing characteristics growth morphology,...
A strategy for improving the sensitivity of a sensor detecting CO and NH3 gases is presented herein. The gas was fabricated from ZnO metal oxide semiconductor nanostructures grown via vapor–liquid–solid process decorated with α-Fe2O3 nanoparticles sol–gel process. response enhanced by formation an α-Fe2O3/ZnO n–n heterojunction growth thinner wires. nanowires were on indium–tin–oxide glass electrodes using Sn as catalyst instead Au. structure elemental composition investigated field-emission...
Several studies have been conducted on amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) with the aim of applying them to next-generation low-power displays. To improve electrical performance conventional AOS TFTs, which are known for their poor switching characteristics, we fabricated indium-zin (IZO) TFTs HfO2/Al2O3 gate insulator deposited via low-temperature atomic layer deposition (ALD). We optimized by varying thickness IZO channel and Al2O3 insulator, respectively....
This paper introduces a strategy for improving the sensitivity of gas sensor to NO2 gas. The was fabricated using urchin-like ZnO nanostructures grown on MgO particles via vapor-phase growth and decorated with MgZnO nanoparticles sol-gel process. showed higher than pristine sensor. When form heterojunction, two-dimensional electron is generated. improves performance morphology, atomic composition, phase structure were confirmed through field-emission scanning microscopy, energy-dispersive...
Conventional sol-gel solutions have received significant attention in thin-film transistor (TFT) manufacturing because of their advantages such as simple processing, large-scale applicability, and low cost. However, conventional processed zinc tin oxide (ZTO) TFTs a thermal limitation that they require high annealing temperatures more than 500 °C, which are incompatible with most flexible plastic substrates. In this study, to overcome the ZTO TFTs, we demonstrated TFT was fabricated at 350...
Several studies on amorphous oxide semiconductor thin-film transistors (TFTs) applicable to next-generation display devices have been conducted. To improve the poor switching characteristics and gate bias stability of co-sputtered aluminum–indium–zinc (AIZO) TFTs, we fabricate Al2O3/indium–zinc (IZO) dual-active-layer TFTs. By varying Al2O3 target power oxygen partial pressure in chamber during back-channel deposition, optimize electrical Al2O3/IZO The which are fabricated under 50 W 13%...
In this study, we grew ZnO nanowires hydrothermally on (1-102) r-plane sapphire substrates in an aqueous solution which contained zinc nitrate hexahydrate and hexamethylenetetramine (HMT) at 90 °C. First, the AZO seed layer of 80 nm thickness was deposited substrate by a radio frequency magnetron sputter. After that, changing precursor concentration from 0.025 M to 0.01 M. When molar changed, diameter, length, density number also changed significantly: length increased with increasing but...
Ultra-thin ZnO thin-film transistors with a channel thickness of <10 nm have disadvantages high threshold voltage and low carrier mobility due to concentration. Although these issues can be addressed by utilizing the strong reducing power tri-methyl-aluminum, method is required control parameters such as voltage. Therefore, we fabricated ZnO/Al2O3 transistor 6 adjusted through modulation generation varying growth temperature Al2O3. As Al2O3 increased, oxygen vacancies generated at...
An unroofed coronary sinus (CS) type atrial septal defect (ASD) is a rare congenital heart disease, in which the common wall between left atrium (LA) and CS partially or completely absent.1 This condition often difficult to diagnose because clinical signs symptoms are nonspecific. Most of reported cases were found incidentally.2 Unroofed ASD have been associated with tachycardia, atrioventricular nodal reentrant tachycardia accessory pathway related tachycardia.