A5070439353- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Advanced Semiconductor Detectors and Materials
- Electron and X-Ray Spectroscopy Techniques
- Advancements in Semiconductor Devices and Circuit Design
- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- 3D Shape Modeling and Analysis
- Advanced Chemical Physics Studies
- Global Trade and Competitiveness
- Face recognition and analysis
- International Business and FDI
- Stress Responses and Cortisol
- Catalytic Processes in Materials Science
- Global trade and economics
- Advanced Vision and Imaging
- Neuroendocrine regulation and behavior
- Ion-surface interactions and analysis
- Molecular Junctions and Nanostructures
- Neuropeptides and Animal Physiology
University of Washington
2025
University of Southern California
1987-2002
Abstract This paper studies how the export participation and labour training decisions of domestic manufacturers are affected by reduced trade barriers due to a regional agreement. We develop general equilibrium model with heterogeneous firm‐level productivity two destinations explain firm performance following liberalisation. Then, theoretical predictions tested generalised difference‐in‐differences estimations. While single‐destination framework shows that decrease in India's tariffs leads...
Thermal decomposition of trimethylgallium in , and their admixtures is studied using molecular beam sampling mass spectrometry. Methane ethane are found as the primary volatile byproducts decomposition. The relative amount increases decreases with an increase concentration to . activation energy for rupture first Ga‐methyl bond be energies second third bonds estimated Our data reinforce a radical mechanism where decomposes by way successively releasing its three methyl radicals.
We present a practical technique for building 3-D human face models from two photographs. Rather than using expensive scanners, we show that frontal can be faithfully reconstructed with unsophisticated digital cameras in totally non-invasive setup. propose rectification algorithm based on the fundamental matrix by computing dual of point transformation matrix. The image matching problem is converted into maximal surface extraction which then solved efficiently. Finally, Euclidean...
The use of trimethylgallium (TMGa) and tertiarybutylarsine (TBAs) in atomic layer epitaxy (ALE) laser-assisted (LALE) GaAs is studied for the first time. TBAs found to be a direct suitable replacement arsine (AsH3) achieving monolayer self-limiting growth. Carbon contamination films grown by LALE using TMGa greatly reduced relative those AsH3. Laser structures single quantum wells ALE exhibit threshold current density as low 300 520 A/cm2, respectively.
The results of a laser design that uses dual Si impurity-induced disordering stripes to both bury the active region and provide lateral electron injection are reported. Without heatsinking, lasers have room temperature CW threshold current as low 2.77 mA single facet external quantum efficiency high 30%.
Integrated optoelectronic components such as addressable laser arrays and transmitter receiver require the development of selective epitaxy processes for definition device elements on wafer surface.