Kaiyu Wang

ORCID: 0009-0002-0275-0123
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About
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Research Areas
  • Fullerene Chemistry and Applications
  • Graphene research and applications
  • Ammonia Synthesis and Nitrogen Reduction
  • Advancements in Battery Materials
  • Hybrid Renewable Energy Systems
  • Transition Metal Oxide Nanomaterials
  • Silicon Carbide Semiconductor Technologies
  • Advanced Optical Sensing Technologies
  • Hydrogen Storage and Materials
  • Polymer Nanocomposite Synthesis and Irradiation
  • Supercapacitor Materials and Fabrication
  • Molecular Junctions and Nanostructures
  • Thin-Film Transistor Technologies
  • Industrial Vision Systems and Defect Detection
  • GaN-based semiconductor devices and materials
  • Optical measurement and interference techniques

Guangxi University
2024

Institute of Microelectronics
2024

Chinese Academy of Sciences
2024

University of Chinese Academy of Sciences
2024

Peking University
1996-1997

In this work, a pulse-mode N2 plasma surface treatment process was proposed as means of reducing damage and improving the GaN/GaOx ratio on before SiNx deposition, which further contributes to an enhanced density 2DEG reduced sheet resistance. With pulsed combined with subsequent passivation, fabricated GaN HEMTs exhibit negligible current collapse suppressed leakage current. The improved behavior is attributed fact that capable nitriding removing carbon contaminants identified through x-ray...

10.1063/5.0235740 article EN Applied Physics Letters 2024-11-18

A novel complex thin film of 2,6-bis(2,2-bicyanovinyl)pyridine (BDCP) and C60 has been fabricated by vacuum coevaporation BDCP from two different evaporation sources. The C60-BDCP films have shown totally optical electronic properties the both C60. Stable reproducible electric bistable observed in sandwichlike device Ag/C60-BDCP/Ag. are characterized several methods including high-resolution scanning electron microscopy, x-ray diffraction, UV-visible absorption infrared transmission spectroscopy.

10.1063/1.116161 article EN Applied Physics Letters 1996-04-22

A novel C60–DDME complex thin film was prepared by a new modified vacuum deposition technique. Stable and reproducible electrical bistable properties are observed in the films. The structure spectroscopy characteristics of considerably different from those both DDME C60 films, as is revealed high resolution scanning electron microscopy, x-ray diffraction, ultraviolet-visible absorption spectra.

10.1116/1.589454 article EN Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena 1997-07-01
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