A5053014971- Thin-Film Transistor Technologies
- Organic Electronics and Photovoltaics
- Nanofabrication and Lithography Techniques
- CCD and CMOS Imaging Sensors
- Organic Light-Emitting Diodes Research
- Nanowire Synthesis and Applications
- ZnO doping and properties
- Advanced Sensor and Energy Harvesting Materials
- Semiconductor materials and devices
- Conducting polymers and applications
National Cheng Kung University
2023
AU Optronics (Taiwan)
2016-2018
This paper proposes a solution to mitigate the trade-off between dark and photocurrents in indium gallium zinc oxide (IGZO) thin-film transistor (TFT) applications, such as ultraviolet photodetectors, by using stacked Pt/NiO dual capping layer (CL). The Pt CL forms Schottky contact with IGZO channel, which maximizes depletion width on channel allows use of thicker suppress both current resistance. On other hand, NiO pn heterojunction provides additional space for generating electron–hole...
In this paper, the electrical stability of organic thin-film transistors (OTFTs) were investigated. Solution and photolithography technologies used for thin film formation patterning. All stacks constructed with materials. However, polymer-type semiconductor material was active layer. Also, all process temperatures taken place below 120D. addition, OTFTs exhibit a good uniformity high stability. Furthermore, integrated 6-inch matrix light emitting diodes (AMOLEDs) realized.
Organic thin‐film transistor (OTFT) with solution‐process, low process temperature (< 120°C), high performance, good uniformity and excellent stability is achieved. Also, a systematic comparison of device performance reliability OTFT a‐Si:H TFT performed in this research. Due to the characteristics, especially bias stability, technology nowadays comparable even overwhelming mass production technology. The commercialization organic electronics driven by backplane expected.
The p‐type organic thin‐film transistors (OTFTs) were fabricated and investigated in this study. Solution photolithography technology used for thin film formation patterning which is compatible with the existing a‐Si:H TFT production. Furthermore, process temperature below 120 ° C enabling fabrication of OTFTs on either glass or flexible substrates. In addition, Carrier transport mechanism polymer‐type OTFT was demonstrated to be a heat‐activated hopping transport.
A p‐type organic semiconductor with intrinsic high intra‐molecular orientation arrangement and uniformly were covered on substrate using spin coating. Combined a vertical phase separation of blend small molecule semiconducting binder is suitable for large‐size uniform‐coating process. The fully solution processable thin‐film transistors (OTFTs) silver/gold free fabrication process our target approach to realize low‐cost manufacturing easy design novel OTFTs. device shows stable electrical...
A planarization layer for organic thin film transistors serves not only as a smooth surface device build‐up, other benefits include better wetting behaviors of semiconductor and auxiliary materials, stronger inter‐layer adhesions, provide stable electrical performances OTFTs. uniform boundary between upper plane the substrate plays key role in achieving reliable performances. The critical properties interface affect coating condition quality semiconductor, which dominate general transfer...