A5093222811- Advanced Materials Characterization Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Hydrogen embrittlement and corrosion behaviors in metals
- Force Microscopy Techniques and Applications
- Diamond and Carbon-based Materials Research
- Fusion materials and technologies
- Ion-surface interactions and analysis
McMaster University
2023-2025
Abstract Atom probe tomography (APT) enables three-dimensional chemical mapping with near-atomic scale resolution. However, this method requires precise sample preparation, which is typically achieved using a focused ion beam (FIB) microscope. As the induces some degree of damage to sample, it necessary apply protective layer over region interest (ROI). Herein, use redeposition, (frequently considered negative) side effect FIB sputtering, explored as technique for targeted surface coatings...
The following letter presents a novel, multi-length-scale characterization approach for investigating doping chemistry and spatial distributions within semiconductors, as demonstrated using state-of-the-art CMOS image sensor. With an intricate structural layout varying types/concentration levels, this device is representative of the current challenges faced in measuring dopants confined volumes conventional techniques. Focused ion beam-secondary mass spectrometry applied to produce...
Abstract Atom probe tomography is used to characterize the 3D Al dopant distribution within gate diffusion region of a deconstructed SiC n-channel junction field effect transistor. The data reveals extensive inhomogeneities in distribution, which manifests as large clusters - some are ring-shaped and indicative segregation lattice defects SiC. presence confirmed by transmission electron microscopy an identical region. Factors that may impact atom quality consequently complicate...