A5068863325- Chalcogenide Semiconductor Thin Films
- solar cell performance optimization
- Semiconductor Quantum Structures and Devices
- Photonic and Optical Devices
- Quantum Dots Synthesis And Properties
- Advanced X-ray and CT Imaging
- Silicon Nanostructures and Photoluminescence
- Neural Networks and Reservoir Computing
- Radiomics and Machine Learning in Medical Imaging
- Quantum Information and Cryptography
- Optical properties and cooling technologies in crystalline materials
- Thermal Radiation and Cooling Technologies
- Orbital Angular Momentum in Optics
- Thin-Film Transistor Technologies
- Nanowire Synthesis and Applications
- ZnO doping and properties
- Optical Network Technologies
- Gas Sensing Nanomaterials and Sensors
- Medical Imaging Techniques and Applications
Arizona State University
2007-2011
Philips (India)
2011
Peking University
2006-2008
A semi-analytical model is constructed for single- and multi-junction solar cells. This incorporates the key performance aspects of practical devices, including nonradiative recombination, photon recycling within a given junction, spontaneous emission coupling between junctions, non-step-like absorptance emittance with below-bandgap tail absorption. Four typical planar structures combinations smooth/textured top surface an absorbing/reflecting substrate (or backside surface) are...
It was found in ZnO nanoparticles of nearly uniform size that the Raman frequencies both polar A1(LO) and nonpolar E2(H) modes do not shift with particle sizes. This observation is perfect agreement previous theoretical prediction. The observed result consistent prediction insensitivity optic vibration frequency nanosemiconductors originates from Fröhlich interaction, which exists only nanosemiconductors.
Abstract Four‐junction solar cells are designed using lattice‐matched II–VI (ZnCdSeTe) and III–V (AlGaAsSb) semiconductors grown on GaSb substrates. These materials have a zinc blende crystal structure, similar thermal expansion coefficients, bandgaps that cover the entire spectrum. Numerical simulations of energy conversion efficiencies various designs for both AM0 AM1.5D spectra performed published material parameters. results indicate achievable 1 sun efficiency is 43% an optimal design...
Abstract The limitation in sample size and the choice parameters for application of micro‐crystal (MC) model have been tested discussed. testing was performed through fitting calculated Raman spectra by using MC with observed nearly uniform‐sized nano‐crystalline (NC)‐Si smaller than 2 nm. results showed that good fittings could not be obtained, if phonon dispersion curves ω( q ) linewidths Γ bulk‐crystals (BCs) were used, i.e. bulk‐like approximation (BLA) used fitting. Moreover, an...
Preparing and manipulating N-dimensional flying qudits as well subsequently establishing their entanglement are still challenging tasks. Here, using an integrated approach, we explore the synergy from two degrees of freedom light, spatial mode polarization, to generate, encode, manipulate photon in a four-dimensional Hilbert space with high quantum fidelity, intrinsically enabling enhanced noise resilience higher data rates.
In summary, epitaxial Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> Sn xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> films with hole mobilities as high 600 cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> V xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> s were deposited on Si(100) substrates by UHV-CVD and used to fabricate photoconductor devices employing standard semiconductor processing steps. Performance...
High-efficiency multifunction solar cells are attracting a great deal of attention for both space and terrestrial applications. We proposed the monolithic integration II/VI (ZnCdMg)(SeTe) III/V (InAlGa)(AsSb) material systems multijunction cells. These have direct bandgap, zinc blende, quaternary alloys, lattice-matched to GaSb substrates that cover entire optical spectrum from greater than 3.0 eV less 0.4 eV; enabling fabrication high quality (with an arbitrary number junctions) well...
Monolithically integrated high-efficiency multijunction solar cells are highly desirable for both space and terrestrial applications. This paper reports recent experimental work on newly proposed cell designs that utilize lattice-matched II/VI CdZnSeTe III/V AlGaAsSb materials grown GaSb substrates. Single ZnTe layers thin CdZnTe/ZnTe quantum wells have been substrates using molecular beam epitaxy. Reflection high-energy electron diffraction, high-resolution x-ray photoluminescence at...
A light emitting active region with three InGaAs quantum wells is monolithically integrated a GaAs hemisphere as means to increase the extraction efficiency of diodes. For device small and large optimal antireflection, theoretical calculations show that extracted fraction spontaneous emission incident on greater than 99.9% overall high 90%. The fabricated consistent aspect ratio (height versus width) using photoresist reflow inductive coupled plasma etching. Detailed numerical simulations...