A5067446447- Advanced Semiconductor Detectors and Materials
- Infrared Target Detection Methodologies
- Calibration and Measurement Techniques
- CCD and CMOS Imaging Sensors
- Semiconductor Quantum Structures and Devices
- Advanced Optical Sensing Technologies
- Chalcogenide Semiconductor Thin Films
- Spectroscopy and Laser Applications
- Radiation Detection and Scintillator Technologies
- Plasmonic and Surface Plasmon Research
- Advanced X-ray and CT Imaging
- Terahertz technology and applications
- Electronic and Structural Properties of Oxides
- Thermal Radiation and Cooling Technologies
- Distributed Sensor Networks and Detection Algorithms
- Gold and Silver Nanoparticles Synthesis and Applications
- Spacecraft Design and Technology
- Optical Systems and Laser Technology
- Optical and Acousto-Optic Technologies
- Thermography and Photoacoustic Techniques
- Image Processing Techniques and Applications
- Photonic and Optical Devices
- Machine Learning in Materials Science
- Transition Metal Oxide Nanomaterials
- Technology Assessment and Management
AIM Infrarot-Module (Germany)
2015-2024
Institute of Electronics, Computer and Telecommunication Engineering
2020-2021
Institute of Informatics and Telematics
2020-2021
Allgemeine Elektrizitäts Gesellschaft (Germany)
1995
Detectors for the short-wave infrared (SWIR) spectral range are particularly suitable observation under hazy weather conditions as well twilight or moon light conditions. In addition, SWIR detectors allow using airglow moonless sky. commonly based on InGaAs HgCdTe (MCT) and demand extremely low dark currents to ensure a high signal-to-noise ratio background AIM has developed read-out integrated circuit (ROIC) with 640×512 pixels 15 μm pixel pitch level applications. The ROIC...
A closed-form probabilistic model for inter-pixel crosstalk in planar HgCdTe focal plane arrays is presented, providing simple expressions of as function device parameters like the pixel pitch, absorber thickness, and extension carrier depleted region. The method effective particular performing parameter sensitivity studies on crosstalk, an alternative to large-scale numerical simulations. validated against three-dimensional combined optical electrical simulations, considering realistic,...
High operating temperature (HOT) IR-detectors are a key factor to size, weight and power (SWaP) reduced IR-systems. Such systems essential provide infantrymen with low-weight handheld increased battery lifetimes or most compact clip-on weapon sights in combination high electro-optical performance offered by cooled IR-technology. AIM's MCT standard n-on-p technology vacancy doping has been optimized over many years resulting MWIR-detectors excellent up temperatures of ~120K. In the last...
Based on AIM's state-of-the-art MCT IR technology, detector modules for the SWIR spectral range have been developed, fabricated and characterized. While LPE grown FPAs with extended 2.5μm cut-off integrated also MBE GaAs is considered future production. Two imaging applications in focus operating either passive mode by making use of e.g. night glow, or active laser illumination gated viewing. Dedicated readout circuits (ROIC), realized 0.18μm Si-CMOS technology providing required...
AIM as one of the global leaders in higher operating temperatures (HOT) mercury cadmium telluride (MCT)-based infrared detectors presents its status on small pixel pitch short wavelength (SWIR), mid (MWIR), long (LWIR) and very (VLWIR) focal plane detector arrays (FPA) gives a glimpse near future field. As now, operabilities exceeding 99.7% excellent radiometric performance are attained measurement under typical conditions at increased 235K SWIR, 170K MWIR, 110K LWIR, 70K VLWIR. Pixel...
It is only some years ago, since VGA format detectors in 15μm pitch, manufactured with AIM's MCT n-on-p LPE standard technology, have been introduced to replace TV/4 detector arrays as a system upgrade. In recent rapid increase the demand for higher resolution, while preserving high thermal compactness and low power budget observed. To satisfy these needs AIM has realized first prototypes of MWIR XGA (1024x768) 10μm pitch. They fit same compact dewar 640x512, pitch arrays. Therefore, they...
Majority carrier depletion has been proposed as a method to suppress the dark current originating from quasi-neutral regions in HgCdTe infrared focal plane array detectors. However, very low doping level is usually required for absorber layer, task quite difficult achieve realizations. In order address this point, we performed combined electromagnetic and electric simulations of planar $ 5 \times $5×5 pixel miniarray with µm wide square pixels, assessing effect thickness, its interval {N_D}{...
In multiple publications over the last years, MCT MBE on GaAs has been shown to be a very versatile and promising material system indeed may prime candidate among alternative substrates for fabrication of high-performance detectors across whole IR composition range. this paper we report successful growth range 0.2 <<i> x(Cd)</i> < 0.8. A single color MWIR 640 × 512, 15 μm pitch detector fabricated from with an operability 99.71% at operating temperature 120 K is presented....
Thermal imagers based on cooled LWIR Modules are the choice for many Army applications in battlefield conditions like e.g. Gunner and Commander Sights armored vehicles or Pilotage Targeting helicopters. AIM has developed produces FPAs liquid phase epitaxy (LPE) grown MCT in-house CdZnTe substrates with different formats up to detector arrays 1280x1024 elements a 15μm pitch. spectral cut-off wavelengths range of 9μm >12μm have been produced characterized. For cost reduction...
The dark current is a fundamental figure of merit to characterize the performance high-sensitivity, low-noise mid- and far-infrared barrier photodetectors. In context HgCdTe photodetectors, trend use very low doping concentrations, in an attempt minimize recombination processes. present work, through TCAD simulations, we delve deeper into design low-dark-current <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math...
For about 30 years, AIM has been ranking among the leading global suppliers for high-performance MCT infrared detectors, with its portfolio spanning photosensitivity cut-off range from SWIR to VLWIR and 1st generation 3rd FPA devices. To meet market demands SWaP-C- IR-detectors additional functionalities such as multicolor detection, employs both LPE MBE technology. From AIM´s line of highest-performance single color detectors fabricated by LPE, we will present our latest excellent results...