A5113350859- Advanced Surface Polishing Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Machining and Optimization Techniques
- Advanced machining processes and optimization
- 3D IC and TSV technologies
- Copper Interconnects and Reliability
- Semiconductor materials and devices
- Nanofabrication and Lithography Techniques
- Metal and Thin Film Mechanics
- Advanced materials and composites
Hebei University of Technology
2023-2024
When chemical mechanical polishing (CMP) of tantalum (Ta)-based barrier layers is done through silicon via (TSV), it necessary to control the rate selection copper (Cu) and Ta prevent formation dishing pit due rapid removal (RR) in compared outside via. This paper selected 2-mercapto-1-methylimidazole (TAMZ) as an inhibitor, which has dual effect reducing RR Cu increasing Ta. The experimental results show that ratio up 2.12:1, inhibition TAMZ on 98.37%, can Cu-Ta galvanic corrosion;...
In order to improve the ratio of removal rate between Through Silicon Via (TSV) barrier material Ta and through-hole filling Cu, reduce surface roughness within wafer non-uniformity (WIWNU) after layer CMP, effects xanthan gel polyvinylpyrrolidone (PVP) combination on polishing properties TSV stability slurry were studied under alkaline conditions. The synergistic mechanism two was explored. experimental results show that gum PVP can achieve lower roughness, higher condition maintaining high...