A. Hsu

ORCID: 0009-0002-7613-0429
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About
Contact & Profiles
Research Areas
  • Photonic and Optical Devices
  • Semiconductor Lasers and Optical Devices
  • Optical Network Technologies
  • Semiconductor Quantum Structures and Devices
  • Integrated Circuits and Semiconductor Failure Analysis
  • Spectroscopy Techniques in Biomedical and Chemical Research
  • Planetary Science and Exploration
  • Advanced Photonic Communication Systems
  • Silicon and Solar Cell Technologies
  • Thin-Film Transistor Technologies
  • Neural Networks and Reservoir Computing
  • Nuclear Structure and Function
  • RNA and protein synthesis mechanisms
  • Spacecraft and Cryogenic Technologies
  • Nanopore and Nanochannel Transport Studies
  • Astro and Planetary Science
  • Ion-surface interactions and analysis
  • Quantum optics and atomic interactions
  • Semiconductor materials and devices
  • Advanced Optical Sensing Technologies
  • Advanced Fiber Laser Technologies

Jet Propulsion Laboratory
2023

The University of Texas at Austin
2023

Industrial Technology Research Institute
2010

Sandia National Laboratories California
2006-2009

Sandia National Laboratories
2003-2008

Istanbul Technical University
2004

University of Illinois Urbana-Champaign
1997-2004

Urbana University
2001

Optical feedback in a vertical-cavity surface-emitting laser due to fiber facet of varying position is studied experiment and theory. Measured spectra light-current curves show periodic variations resonant wavelength, threshold current, differential quantum efficiency, output power as function position. Theoretical results were obtained using 2 /spl times/ vector propagation matrix method which models the single structure shows good agreement with experimental results. A novel for...

10.1109/3.970912 article EN IEEE Journal of Quantum Electronics 2001-01-01

Longitudinal spatial hole burning (SHB) in semiconductor lasers is examined theoretically and experimentally index-coupled distributed-feedback (DFB) lasers. The amplified spontaneous emission (ASE), or facet light, below threshold measured fitted by a theoretical model order to extract the parameters such as phases of optical field reflection at facets. ASE spectrum above also compared with results using same parameters. photon density profile dominant lasing mode carrier bias current are...

10.1109/2944.605706 article EN IEEE Journal of Selected Topics in Quantum Electronics 1997-04-01

Dual-pump four-wave mixing for wavelength conversion is demonstrated using a distributed-feedback laser integrated with two electroabsorption modulators. The device acts as both the medium and dual-pump source. For given input probe signal, output conjugate signal-to-noise ratio values of greater than 10 dB were measured over wavelengths ranging from 1557 to 1564 nm probe-conjugate detuning 0.5 nm.

10.1109/lpt.2003.815325 article EN IEEE Photonics Technology Letters 2003-07-29

A distributed-feedback (DFB) laser with a curved waveguide in the active region integrated an electroabsorption modulator is studied experimentally and theoretically. The controls lasing wavelength of DFB by acting as optical phase shifter. Our model, which based on transfer matrix method, used to simulate this multisection device waveguide, self-consistently including effects spatial hole burning (SHB). model explains features wavelength-tuning behavior spectrum shows good agreement...

10.1109/3.766840 article EN IEEE Journal of Quantum Electronics 1999-06-01

A laser opening technique is employed as the photolithography process to form selective emitter (SE) structures on multi-crystalline silicon (mc-Si) substrates for large-area (156×156 mm2) solar-cell industry. The best efficiency of 16.35% obtained with developed SE structure after a damage removal optimisation heavily and lightly doped dopants, which yields gain 0.88% absolute compared that reference cell. Significantly, mc-Si solar cell without can also reach 0.48% absolute. has...

10.1049/el.2010.2471 article EN Electronics Letters 2010-11-11

Abstract We developed a Monte‐Carlo‐based radiative heat transfer model capable of simulating solar exposure and subsequent warming rough snow ice surfaces on ice‐covered airless system bodies. The accounts for wavelength‐dependent internal light scattering conduction in the interior down to meter‐scale depths. validated against analytical experimental test cases with relevant applications Europa, one Jupiter's moons. examined differential heating across surface, from centimeter meter scale,...

10.1029/2023je007800 article EN Journal of Geophysical Research Planets 2023-11-01

We report on the tunable dual-mode operation of a chirped grating distributed-feedback (DFB) laser device with two integrated modulators which act as tuning sections. A transfer-matrix model is used to simulate amplified spontaneous emission spectrum for DFB laser. Several types are observed wavelength spacings 0.5 nm and 1.4 corresponding frequency detunings 63 GHz 175 GHz.

10.1109/68.867975 article EN IEEE Photonics Technology Letters 2000-08-01

We demonstrate a compact, all-optical XOR gate at 1550nm by integrating three symmetric self-electooptic effect devices (S-SEEDs) with micro-optics. Each S-SEED operates as NAND or NOR and can switch faster than 10ps.

10.1109/ps.2008.4804272 article EN International Conference on Photonics in Switching 2008-08-01

The impact of Foreign Material (FM) on the semiconductor manufacturing process is well established. For organic corrosive FM that are embedded in final devices after assembly, FTIR one preferred characterization techniques by fingerprint identification or database searching. This technique becomes more challenging for smaller feature sizes where strong IR interferences complicated matrices impedes adequate identification. Advances mapping ATR-FTIR can push lateral sampling resolution to...

10.1109/ipfa58228.2023.10249190 article EN 2023-07-24

We describe recent advances in the development of 1550-nm symmetric self-electrooptic effect devices (S-SEEDs). S-SEEDs are semiconductor optoelectronic used to implement ultrafast all-optical logic functions for optical fiber communication applications. In this paper, basic S-SEED operation is described, followed by a detailed explanation optimization techniques improve DC and high-speed performance these long wavelength devices. Both epitaxial strain quantum well design shown be important...

10.1149/1.2983153 article EN ECS Transactions 2008-10-06

Results are presented showing the effect of bias current on mode competition in large-signal modulation response a vertical-cavity surface-emitting laser. The overshoot and turn-on delay between LP01 LP11 modes observed to be strongly dependent relative individual threshold currents both experiments simulations.

10.1049/ip-opt:20040341 article EN IEE Proceedings - Optoelectronics 2004-06-01

We demonstrate the operation of low-power reflective S-SEEDs with 6-ps switching times at a 2-volt bias. Efficient refractive micro-optics are used to optically interconnect multiple S-SEED gates. The technology platform is expected enable dense photonic logic circuits for high-speed telecommunications-related applications.

10.1109/ps.2009.5307765 article EN International Conference on Photonics in Switching 2009-09-01

Summary form only given. We investigate a new technique to perform wavelength conversion, cross-absorption modulation (XAM), where modulated pump signal is used change the absorption of modulator so that output DC probe also modulated, and non-inverted conversion from achieved. High-speed at 20 Gb/s over 30 nm has been reported recently using this in single electroabsorption (EA) modulator. Here, we use an integrated multiple-quantum-well modulator/laser (EML), laser section acts as probe,...

10.1109/cleo.1999.834487 article EN 2003-01-20

Summary form only given. We describe an improved method for measuring the spontaneous emission (SE) spectra from cleaved side of a VCSEL cavity using 62.5-/spl mu/m multimode fiber and present experimental results. The under study was grown fabricated in AlGaAs/GaAs material system. advantage this is that distortion due to top transmission measurements through distributed Bragg reflectors filters avoided. Furthermore, by integrating SE spectrum rather than directly power, we ensure indeed...

10.1109/cleo.2002.1034211 article EN 2003-06-25

This paper describes technologies developed at Sandia National Laboratories to support a joint DoD/DoE initiative create compact, robust, and affordable photonic proximity sensor for munitions fuzing. The fuze employs high-power vertical-cavity surface-emitting laser (VCSEL) arrays, resonant-cavity photodetectors (RCPDs), refractive micro-optics that are integrated within microsensor whose volume is approximately 0.01 cm<sup>3</sup>. Successful development integration of these custom...

10.1117/12.792023 article EN Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE 2008-08-28

A novel method for fabricating AIGaAs microstructures is investigated. The process consists of a thermal volume oxidation AIGaAs/GaAs epitaxy and selective etching the resulting aluminum oxide.

10.1109/leos.2004.1363263 article EN 2004-12-23

We study optical-feedback effects using an integrated laser-modulator/amplifier. Our experiment and theory are agree well provide interesting results of feedback on optical spectrum, spatial-hole burning, the photon density profile, microwave modulation.

10.1364/ipra.2006.jwb4 article EN 2006-01-01

Monolithically-integrated optical gain-competition inverters are demonstrated at 1.55 μm in the InGaAsP/InP material system. The consist of etched-facet slave lasers that side-injected with tapered etchedfacet master lasers. Single-input show improved quenching contrast for devices larger taper width respect to laser length. Inverter performance also shows a dependence on ridge and lasing modes laser. Two-input characterized which demonstrate NAND NOR logic operation different currents.

10.1117/12.643995 article EN Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE 2006-02-09
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