Liankai Zheng

ORCID: 0009-0002-8045-9091
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About
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Research Areas
  • Semiconductor materials and devices
  • Thin-Film Transistor Technologies
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Advancements in Semiconductor Devices and Circuit Design
  • 3D IC and TSV technologies
  • Transition Metal Oxide Nanomaterials
  • Ga2O3 and related materials
  • ZnO doping and properties
  • CCD and CMOS Imaging Sensors
  • Semiconductor Quantum Structures and Devices
  • Integrated Circuits and Semiconductor Failure Analysis
  • Semiconductor materials and interfaces

Shanghai Jiao Tong University
2022-2025

It has been well recognized that high-density deep states exist in indium–gallium–zinc oxide (IGZO) thin films. Many of the device characteristics IGZO transistors, such as negative bias illumination stability (NBIS), are understood to be related these states. However, this work, it was found deep-state density (NtD) atomic-layer-deposited (ALD) transistors can an ultralow value (<2.3 × 1012/cm3) by proposed NBIS-free light-assisted I–V measurements so do not affect even subthreshold region....

10.1021/acs.nanolett.5c01673 article EN Nano Letters 2025-03-31

In this work, we systematically study the impact of capacitive coupling effect on memory characteristics 2T0C DRAM by both theoretical modeling and experiments. Then, based insights coupling, propose a new writing strategy for DRAM, which can effectively enhance window retention at same operation voltage. Finally, demonstrate high performance ZnO-based cell with >1000 s under criterion <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">...

10.1109/led.2023.3287942 article EN IEEE Electron Device Letters 2023-06-20

10.7567/ssdm.2024.k-2-03 article EN Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials 2024-09-02

This paper presents a compute-in-memory (CIM) cell design based on the low-temperature polycrystalline-silicon (LTPS) oxide (LTPO) hybrid thin-film transistor (TFT) technology. The weight of is quantized to 4 bits though LTPS TFTs different width-to-length ratios. weights are able be maintained for long-term operation with ultra-low leakage amorphous indium-gallium-zinc-oxide (a-IGZO) TFT switches. A CIM array designed implement 3-layer MLP neural network MNIST dataset recognition, which can...

10.1109/ifetc53656.2022.9948500 article EN 2022-08-21
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