A5066742301- Electronic Packaging and Soldering Technologies
- 3D IC and TSV technologies
- Copper Interconnects and Reliability
- Material Properties and Processing
- Semiconductor materials and interfaces
- Lignin and Wood Chemistry
- Additive Manufacturing and 3D Printing Technologies
- Mechanical stress and fatigue analysis
- Nanocomposite Films for Food Packaging
- Semiconductor Lasers and Optical Devices
City University of Hong Kong
2023-2024
Due to the demand for high-performance electronic products, there has been a rapid development in three-dimensional integrated circuit (3D IC) packaging technology. The 3D stacking relies on microbumps and through silicon vias (TSVs) connect multiple Si dies vertically. These products usually need consume high power, combined with limited heat dissipation due dense packing, resulting issue of Joule heating. problem heating impacts reliability products. This study investigated factors...
As advanced silicon manufacturing processes slow down in scaling, three-dimensional stacking of chips has become a future trend microelectronic industry. High-density bonding technology is one the core technologies used to achieve stacking. In this work, we explored new that possible manufacture high-density interconnects. We fabricated series sandwich structure solder joints with different thicknesses using SnBiIn-based nanoparticles under low temperature 100 °C. The intermetallic compound...
Ball Grid Array (BGA) packaging method has been widely used in microelectronic devices, and electromigration (EM) BGA is a crucial reliability issue, determining the performance of products. Herein, we report new failure mode induced by coupling effect EM Joule heating structure. The test sample consists roll 500 μm-BGA solder joints with upper lower Cu under-bump-metallization (UBM) different thicknesses, 16 μm, 68 respectively. Open failures thinner cathodic UBM at contacting area joint...
Abstract Electromigration (EM) failure in solder joints is a persistent reliability concern, especially advanced electronic packaging structures. In this study, we conducted an EM experiment on with asymmetric under-bump-metallization (UBM) thicknesses. Open occurred at the joint no current crowding effect but highest atomic flux of EM, which related to Sn grain orientation. Our work tries reveal counteracting orientation and essential reason for mechanism joints. Graphical
Ball Grid Array (BGA) is an important method of packaging technology and widely used in semiconductor industry. With the high requirement to consumer electronic devices, total power increases a lot input current significantly enhanced. BGA, served as trunk advanced structure such three-dimensional integrated circuit (3D IC), suffers from higher density. Therefore, electromigration (EM) reliability issues BGA become determine quality device. In this paper, we report failure mode 500 pm-BGA...
In this paper, we report the acceleration on failure of eutectic SnBi solder through simultaneous application current stress and temperature cycling. For purpose, electromigration (EM) cycling test (TCT) is conducted synchronously a vehicle with daisy-chain structure containing 6 solders. After experiment, Sn- Bi-rich phase separation observed stress-induced crack type discovered in sample. Simulation distribution sample to locate preferred generation site The experimental result EM + TCT...
The Ball Grid Array (BGA) packaging method has been extensively applied in electronic industry. Electromigration reliability BGA determines the performance of whole device, and thus an important research topic for decades. In this article, we report a new failure mode induced by coupling effect electromigration Joule heating structure. sample consists roll 500 μm-BGA, upper bottom Cu under bump metallization (UBM) with different thicknesses (16 μm 68 μm). open was observed at cathodic thin...