A5103189920- Surface and Thin Film Phenomena
- Semiconductor materials and interfaces
- Algebraic Geometry and Number Theory
- Cultural Heritage Materials Analysis
- Silicon Carbide Semiconductor Technologies
- Glass properties and applications
- Advanced Materials Characterization Techniques
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Gas Sensing Nanomaterials and Sensors
- Advanced Chemical Sensor Technologies
- Polynomial and algebraic computation
- Laser Material Processing Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Advancements in Battery Materials
- Analytical Chemistry and Sensors
- Commutative Algebra and Its Applications
Jadavpur University
2024
Maulana Abul Kalam Azad University of Technology, West Bengal
2023-2024
Indian Institute of Technology Kharagpur
2015-2018
Corning (United States)
2003
Indoor air quality (IAQ) monitoring is essential to maintain healthy human life. Among different pollutants affecting IAQ, formaldehyde one of the toxic volatile organic compounds (VOC) that needs be monitored. In this paper, hierarchical NiO nanostructure sensing layer was used as highly sensitive sensor in presence light. The response found 292% 190 ppm with a fast ~24 s and recovery ~42 time. specific towards compared other VOCs. LOD calculated for low 910 ppb. optimum operating...
Femtosecond laser pulse induced structural changes in silica glass and their role changing the refractive index of have been investigated using ab initio molecular dynamics simulation methods based on finite-temperature density functional theory. The average nearest-neighbor Si-O, Si-Si, O-O distances are found to increase during irradiation due weakening bonds resulting from thermalization electrons. These almost completely recovered postirradiation evolution structure. However, persistent...
β-FeSi2 has been doped with Boron via a novel and cost-effective chemical reduction of the glassy phase [(Fe2O3 + 4SiO2 B2O3 FeBO3 Fe2SiO4)] using Mg metal at 800 °C. Doped investigated extensive characterization detailed analysis first-principles calculations. The in d-spacing as can be observed from XRD peak shift well blue β-Raman line along right Si Fe 2p peaks indicate B doping. Hall investigation basically demonstrates p-type conductivity. parameters were also analyzed thermal mobility...
The effects of Mn and As doping in β-FeSi2 have been studied by theoretical simulations electrical characterizations analyzing Hall parameters within the temperature range 20–300 K using mobility dual band model. resistivity ρ doped samples increases linearly from a negative to positive magnetic field (B), demonstrating normal effect at room temperature. High concentration significantly with gradual increase both due more ionization deep donor level. activation energies are considerably...
The Fermat–Pramanik series are like below: .The mathematical principle has been established by factorization principle. Fermat-Pramanik tree can be grown. It produces branched using same making chain. Branched chain propagated at any point of the main with indefinite length as follows: Same is applicable for integer solutions AM+B2=C2which type . shown that this equation solvable N{A, B, C, M}. where , M=M1+M2 and M1>M2. Subsequently, it M= M1+M2+M3+... combinations Ms should taken so values...
In this paper, the effect of configurational confinement charge carriers in super thin body undoped (or weakly doped) FinFET, is considered owing to development a semi-empirical quantum model. Some significant short channel effects are also incorporated our proposed model characterize device performance across specific range operating voltages. Furthermore, modeled curves validated with respect calibrated 3D simulation ATLAS Silvaco.