A5072295161- Advancements in Semiconductor Devices and Circuit Design
- Radiation Effects in Electronics
- Semiconductor materials and devices
- VLSI and Analog Circuit Testing
- Embedded Systems Design Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Electrostatic Discharge in Electronics
- Business and Management Studies
- Low-power high-performance VLSI design
- Real-Time Systems Scheduling
- Behavioral and Psychological Studies
- Psychology and Mental Health
- Analog and Mixed-Signal Circuit Design
- Advanced Software Engineering Methodologies
- Cardiac Valve Diseases and Treatments
- Education Pedagogy and Practices
- Electromagnetic Compatibility and Noise Suppression
- Neurogenetic and Muscular Disorders Research
- Archaeological and Historical Studies
- Science and Science Education
- Semiconductor Lasers and Optical Devices
- Microwave Engineering and Waveguides
Centro Universitário FEI
2012-2020
Centro de Tecnologia da Informação Renato Archer
2017
General Motors (Poland)
2011-2012
Neste trabalho apresentamos uma proposta de uso da plataforma Tainacan para a digitalização coleções arqueológicas. Discutimos origem e vantagens utilizar este plugin wordpress, bem como sua lógica estrutura dados. Indicamos um potencial motivador baixa adesão por instituições arqueologia propomos forma simples eficiente lidar com repositório cultural pesquisa curadoria arqueológica. Para tanto, demonstramos realizamos o processo do Museu Antropológico/UFG. Ao final, traçamos reflexões sobre...
INTRODUÇÃO: O transtorno dismórfico corporal é caracterizado por uma preocupação excessiva em defeitos na aparência física, com comportamento e atos mentais para consertar ou esconder a falha percebida. uso exacerbado de redes sociais pode estar relacionado o desenvolvimento persistência deste transtorno.OBJETIVOS: Analisar literatura científica acerca do impacto das no corporal. MÉTODOS: Consiste revisão sistemática, feita entre janeiro março 2024, nas bases dados PubMed/MEDLINE, Google...
This letter describes an experimental comparative study of the total ionizing dose (TID) effects due to Co-60 gamma irradiation between hexagonal (Diamond) and conventional rectangular gates metal-oxide semiconductor field-effect transistors (MOSFETs), regarding same bias conditions during irradiation. The were manufactured by using 350 nm commercial bulk complementary (CMOS) integrated-circuits (ICs) technology. innovative gate layout proposal can reduce parameter deviations TID in MOSFETs...
This paper describes an experimental comparative study of the total ionizing dose (TID) effects between Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFET) manufactured with Wave (S gate geometry) and standard layouts (CnM). Because special characteristic bird's beaks regions MOSFET (WnM), this innovative layout proposal for transistors is able to increase devices TID hardness analog integrated circuits (IC) applications in terms unity voltage gain frequency (f <inf...
This paper presents an experimental comparative study of the Total Ionizing Dose (TID) effects between Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFET) manufactured with Wave (S gate geometry) and standard layout (CnM). Because special geometric characteristic gate, drain source regions MOSFET (WnM), this innovative proposal for transistors is able to mitigate TID in order implement analog integrated circuits (IC) space medical applications without causing any additional...
This paper performs an experimental comparative study between the Wave layout style (“S” shape gate geometry) and Conventional (rectangular counterpart in order to verify quantify benefits that structure can bring improve performance of devices analog circuit, specially trasconductance ratio transconductance drain current as a function normalized by geometric factor frequency response (voltage gain unit voltage frequency). By working with instead conventional counterpart, it device terms...
This paper presents an experimental comparative study between the Metal-Oxide-Semiconductor Field Effect Transistors (MOSFET) manufactured with Wave ("S" gate geometry) and standard layout (CnM) considering Total Ionizing Dose (TID) effects taking into account that devices were biased during radiation procedure to emphasize effects. Due special characteristics different of bird’s beaks regions MOSFET (WnM) compared conventional rectangular layout, this innovative proposal for MOSFETs is able...
Tricuspid valve dysplasia consists of morphological changes in the cusps, chordae tendineae and papillary muscles, which may present greater amplitude between these structures. It stands out as a common congenital heart disease felines rarely found dogs. In large pigs, few reports are literature about this agenesis, no pigs classified micropigs. A retrospective study carried by F.S. Hsu S.J. Du Taiwan, identified among 1,906 necropsied 83 animals that had some disease, with 42 (34%) affected...
This paper performs an experimental comparative study of the X-ray radiation effects between Wave layout style (S-shaped gate geometry) and Conventional (rectangular counterpart, focusing on digital integrated circuits (IC) applications. demonstrates to be more tolerant regarding total ionizing (TID) for IC. By working with instead it can significantly improve device performance in terms threshold voltage (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...
Este artigo teve como finalidade de analisar as perspectivas institucional, docente, discente e dos produtos educacionais resultantes das pesquisas da Educação Profissional Tecnológica (PROFEPT) que abordam integram o Empreendedorismo, a Empreendedora Economia Criativa. Para tanto, um estudo bibliográfico baseado, exclusivamente, nas dissertações do PROFEPT foi conduzido utilizando, partir Catálogo Tese Dissertações CAPES. Foram identificadas 14 sobre tema, com uma predominância...
This paper presents an experimental comparative between the Metal-Oxide-Semiconductor (MOS) Field Effect Transistors (MOSFET) manufactured with Wave (S gate geometry) and standard layout (CnM) considering Total Ionizing Dose (TID) effects. Due to special characteristics of bird’s beaks regions MOSFET (WnM), this innovative proposal for MOSFETs is able improve device TID tolerance without add cost Complementary MOS (CMOS) manufacturing process. INTRODUCTION The effects cause long term damage...