A5051428969- Advancements in Photolithography Techniques
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In-Q-Tel
2022-2024
SUNY Polytechnic Institute
2015-2019
Center for Nanoscale Science and Technology
2015
The lithography community has studied EUV photoresists for nearly thirty years. Yet, some of the most basic details interaction photons with remain poorly understood. In a typical photochemical reaction using long-wavelength light (λ = 157-1000 nm), create excited states in photoactive compounds, thereby creating known quantities intermediates and photoproducts at measurable rates. reactions occurring during exposure are much more complex and, as yet, not fully explored. 92 eV ionize...
EUV photons expose photoresists by complex interactions starting with photoionization that create primary electrons (~80 eV), followed ionization steps secondary (10-60 eV). Ultimately, these lower energy interact specific molecules in the resist cause chemical reactions which are responsible for changes solubility. The mechanisms components key to optimizing performance of resists. An electron exposure chamber was built probe behavior within photoresists. Upon and development a photoresist...
Optimizing the photochemistry of extreme ultraviolet (EUV) photoresists can lead to faster, more efficient resists needed for implementation EUV lithography into high volume manufacturing. must simultaneously meet three requirements: improved resolution, low line edge roughness (LER), and sensitivity. Common utilize photoacid generators (PAGs) improve sensitivity, which is affected by many variables, such as developer choice, concentration, PAG quantum yield, etc. Isolating one these...
In this talk we present core technology solutions for EUV Patterning and co-optimization between resist underlayer coating, development plasma etch transfer to achieve best in class patterning performance. We will introduce new hardware process innovations address stochastic issues, strategies that can extend into High NA patterning. A strong focus be placed on dose reduction opportunities, thin enablement pattern collapse mitigation technologies. CAR MOR performance leading edge design...
Extreme ultraviolet (EUV, ~13.5 nm) lithography is the prospective technology for high volume manufacturing by microelectronics industry. Significant strides towards achieving adequate EUV source power and availability have been made recently, but a limited rate of improvement in photoresist performance still delays implementation EUV. Many fundamental questions remain to be answered about exposure mechanisms even relatively well understood chemically amplified photoresists. Moreover,...
the microelectronics industry. Traditional EUV photoresists have been composed of organic compounds which are moderately transparent to EUV. Resist stochastics and sensitivity can be improved by increasing number photons absorbed. Molecular organometallic resists a type metal containing resist aimed at improving absorption. This work focuses on studying role center (Metal = Co, Fe, Cr) in an oxalate complex comparing absorbed photoelectron reactivity each compound. In study presented here,...
The photomechanism of extreme ultraviolet (EUV) exposures in chemically amplified photoresists is much different than that previous lithographic wavelengths. Electrons generated during EUV exposure are demonstrated to be a source acid production through process referred as electron trapping. Density functional theory modeling indicates it energetically favorable for the photoacid generator (PAG) molecule decompose if an trapped. Low-energy electrons (<10 eV) unlikely produce holes and...
Optimizing the photochemistry in extreme ultraviolet (EUV) photoresists due to EUV exposures may enable faster, more efficient resists, leading a greater throughput manufacturing. Since fundamental reaction mechanisms resists are believed be electron interactions after incident 92 eV photons (13.5 nm) generate photoelectrons during ionization events, understanding how these interact with resist components is critical for optimizing performance of and lithography as whole. The authors will...
We have developed a method to study the photomechanism of our antimony carboxylate platform Ph3Sb(O2CR')2. A series mechanistic studies followed production reaction byproducts by mass spectrometer, as they leave film during exposure EUV photons or 80 eV electrons. The major volatile products are CO2, benzene and phenol. rate outgassing is well-correlated with energy decarboxylation ligand determined density functional theory. Additionally, deuterium labeling was conducted determine source...
In extreme ultraviolet (EUV) lithography, 92 eV photons are used to expose photoresists. Current EUV photoresists composed of photoacid generators (PAGs) in polymer matrices. Secondary electrons (2 - 80 eV) created resists during exposure play large role acid-production. There several proposed mechanisms for electron-resist interactions: internal excitation, electron trapping, and hole-initiated chemistry. Here, we will address two central questions resist research: (1) How many generated...
We have developed a method to study the photomechanism of our antimony carboxylate platform R3Sb(COOR')2. A series mechanistic studies followed production reaction byproducts by mass spectrometer, as they left film during exposure EUV photons and 80 eV electrons. identified several prominent outgassing fragments their rates function ligand structure. The degree appears be well-correlated with bond dissociation energy R' group. Furthermore, deuterium labeling was conducted determine from...
In extreme ultraviolet (EUV) lithography, 92 eV photons are used to expose photoresists. Typical EUV resists organic-based and chemically amplified using photoacid generators (PAGs). Upon exposure, PAGs produce acids which catalyze reactions that result in changes solubility. photo- secondary electrons (energies of 10- 80 eV) play a large role PAG acid-production. Several mechanisms for electron-PAG interactions (e.g. electron trapping, hole-initiated chemistry) have been proposed. The aim...
Extreme ultraviolet (EUV) photons expose photoresists by complex interactions starting with photoionization that create primary electrons (∼80 eV), followed ionization steps secondary (10 to 60 eV). Ultimately, these lower energy interact specific molecules in the resist cause chemical reactions which are responsible for changes solubility. The mechanisms components key optimizing performance of EUV resists. A exposure chamber was built probe behavior within photoresists. Resists were...
Optimizing the photochemistry of extreme ultraviolet (EUV) photoresists should provide faster, more efficient resists which would lead to greater throughput in manufacturing. The fundamental reaction mechanisms EUV are believed be due interactions with energetic electrons liberated by ionization. Identifying likelihood (or cross section) how these photoelectrons interact resist components is critical optimizing performance resists. Chemically amplified utilize photoacid generators (PAGs)...
One of the critical challenges for delivering next nodes or high-NA extreme ultraviolet (EUV) lithography to high volume manufacturing (HVM) in semiconductor industry is have a high-performance EUV resist process. The process needs simultaneously meet multiple requirements, such as resolution, sensitivity, low roughness, defect level, and good global CD uniformity (CDU). In this paper, we will introduce new wet development (DEV) method improve performance metal oxide resists (MOR), which...
As the semiconductor industry continues to push limits of integrated circuit fabrication, reliance on extreme ultraviolet lithography (EUVL) has increased. Additionally, it become clear that new techniques and methods are needed mitigate pattern defectivity roughness at etching eliminate film-related defects. These approaches require further improvements process chemicals equipment achieve finer patterns [1]. This paper reviews ongoing progress in coater/developer processes enable EUV...
The photo-mechanism of EUV exposures in chemically amplified photoresists are much different than that previous lithographic wavelengths. Electrons generated during exposure demonstrated to be a source acid production through process referred as electron trapping. Density functional theory modeling indicates it is energetically favorable for the PAG molecule decompose if an trapped. Low-energy electrons unlikely produce holes and secondary generate indicating electron-PAG interactions...
This paper describes the photoreactivity of six organometallic complexes type Ph<sub>n</sub>MX<sub>2</sub> containing bismuth, antimony and tellurium, where n = 3 for bismuth 2 X acetate (O<sub>2</sub>CCH<sub>3</sub>) or pivalate (O<sub>2</sub>CC(CH<sub>3</sub>)<sub>3</sub>). These compounds were exposed to EUV light monitor photodecomposition via in situ mass spectral analysis primary outgassing products CO<sub>2</sub>, benzene phenol. explores effect metal center carboxylate ligand on...
During the photolithographic process, a photoresist is exposed to EUV photons; it believed that secondary low energy electrons generated during this exposure decompose PAG molecule, producing acid. Regardless of how these are produced, whether by incident or photons, number acids produced will lead solubility change within photoresist. The goal study observe changing reactions due electron exposures (approximately 5-80 eV). occurring in monitored through outgassing measurements photon...
We have investigated the mechanism of photodecomposition antimony carboxylate complexes type Ph3Sb(O2CR')2 by means EUV outgassing in combination with isotopic labeling. When exposed to light, these compounds decompose form CO2, benzene and phenol. The source hydrogen needed create phenol can be traced hydrogens originating original organometallic complex. However, it is much more difficult trace origin convert phenyl groups (Ph-H). propose that primary external film. Additionally, we...
As the semiconductor industry continues to push limits of integrated circuit fabrication, reliance on extreme ultraviolet lithography (EUVL) has increased. Additionally, it become clear that new techniques and methods are needed mitigate pattern defectivity roughness at etch process eliminate film-related defects. These approaches require improvements chemicals equipment achieve finer patterns. ESPERTTM (Enhanced Sensitivity develoPER TechnologyTM) technique been developed optimized fulfil...
Alternative patterning solutions, such as litho-freeze-litho-etch (LFLE) and spacer-based pitch splitting, have been a cornerstone of advanced technology nodes to enable device scaling. The greatest utility comes from the ability self-align splitting process; however, traditional techniques require deposition etch multiple materials, which reduce throughput increase manufacturing costs. Anti-spacer technology, on other hand, enables both self-aligned high via single pass track-based process....