Tae Soo Kim

ORCID: 0009-0003-1489-4180
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • 2D Materials and Applications
  • Perovskite Materials and Applications
  • Graphene research and applications
  • MXene and MAX Phase Materials
  • Quantum Dots Synthesis And Properties
  • Gas Sensing Nanomaterials and Sensors
  • Quantum and electron transport phenomena
  • Molecular Junctions and Nanostructures
  • Chalcogenide Semiconductor Thin Films
  • Advanced Memory and Neural Computing
  • Surfactants and Colloidal Systems
  • Nanocluster Synthesis and Applications
  • Nanowire Synthesis and Applications
  • Acoustic Wave Resonator Technologies
  • Photonic Crystals and Applications
  • Thin-Film Transistor Technologies
  • Advanced Polymer Synthesis and Characterization
  • Photopolymerization techniques and applications
  • Nanoplatforms for cancer theranostics
  • Layered Double Hydroxides Synthesis and Applications
  • Luminescence Properties of Advanced Materials
  • Magnesium Oxide Properties and Applications
  • Adsorption and Cooling Systems
  • ZnO doping and properties
  • Plasmonic and Surface Plasmon Research

Korea Advanced Institute of Science and Technology
2020-2024

Pohang University of Science and Technology
2023

Institute for Basic Science
2016-2023

Ajou University
2017-2019

Suwon Research Institute
2017

Sungkyunkwan University
2008-2016

Chungnam National University
2010-2012

Korea Institute of Oriental Medicine
2012

Samsung (South Korea)
2006

Atomically smooth van der Waals materials are structurally stable in a monolayer and few layers but susceptible to oxygen-rich environments. In particular, recently emerging such as black phosphorus perovskite have revealed stronger environmental sensitivity than other two-dimensional layered materials, often obscuring the interesting intrinsic electronic optical properties. Unleashing true potential of these requires oxidation-free sample preparation that protects thin flakes from air...

10.1021/acsnano.5b06680 article EN ACS Nano 2016-01-06

The extreme elastic strain of monolayer transition metal dichalcogenides provides an ideal platform to achieve efficient exciton funneling via local modulation; however, studies conducted thus far have focused on the use substrates with fixed profiles. We prepared 1L-WS2 a flexible substrate such that formation topographic wrinkles could be switched or off, and depth direction wrinkle modified by external strain, thereby providing full control periodic undulation band gap profile in range...

10.1021/acs.nanolett.0c02619 article EN Nano Letters 2020-10-14

In general, the quantum yields (QYs) of monolayer transition metal dichalcogenides (1L-TMDs) are low, typically less than 1% in their pristine state, significantly limiting photonic applications. Many methods have been reported to increase QYs 1L-TMDs; however, technical difficulties involved reliable estimation these prevented general assessment methods. Herein, we demonstrate 1L-TMDs using a poly methyl methacrylate (PMMA) thin film embedded with rhodamine 6G (R6G) as reference specimen...

10.3390/nano10061032 article EN cc-by Nanomaterials 2020-05-28

Van der Waals (vdW) heterostructures have drawn much interest over the last decade owing to their absence of dangling bonds and intriguing low-dimensional properties. The emergence 2D materials has enabled achievement significant progress in both discovery physical phenomena realization superior devices. In this work, group IV metal chalcogenide 2D-layered Ge4 Se9 is introduced as a new selection insulating vdW material. synthesized with rectangular shape using metalcorganic chemical vapor...

10.1002/adma.202204982 article EN Advanced Materials 2022-08-24

Abstract In this work, the potential of 2D semi‐metallic PtSe 2 as source/drain (S/D) contacts for material field‐effect‐transistors (FETs) through theoretical and experimental investigations, is explored. From density functional theory (DFT) calculations, can inject electrons holes into MoS WSe , respectively, indicating feasibility both n‐ p‐metal‐oxide‐semiconductor FETs (n‐/p‐MOSFETs). Indeed, experimentally fabricated flake‐level n‐MOSFETs p‐MOSFETs exhibit a significant reduction in...

10.1002/adfm.202407382 article EN cc-by-nc-nd Advanced Functional Materials 2024-08-02

Abstract Upconversion nanoparticles (UCNPs), as near‐infrared (NIR) absorbers, are promising materials for use in flexible NIR photodetectors, which can be applied wearable healthcare applications due to their advantages a broad spectral range, high photostability, and biocompatibility. However, apply UCNPs large‐area integrated devices, water stability micro‐patterning methods required. In this work, the encapsulated with siloxane polymer (UCNP@SiOx) via sol–gel process enable...

10.1002/adom.202202469 article EN Advanced Optical Materials 2023-03-24

The capability to finely tailor material thickness with simultaneous atomic precision and non-invasivity would be useful for constructing quantum platforms post-Moore microelectronics. However, it remains challenging attain synchronized controls over tailoring selectivity precision. Here we report a protocol that allows non-invasive atomically digital etching of van der Waals transition-metal dichalcogenides through selective alloying via low-temperature thermal diffusion subsequent wet...

10.1038/s41467-022-29447-6 article EN cc-by Nature Communications 2022-04-05

Abstract Advanced patterning techniques are essential to pursue applications of 2D van der Waals (vdW) materials in electrical and optical devices. Here, the direct lithography (DOL) vdW by single‐pulse irradiation high‐power light through a photomask is reported. The DOL exhibits large‐scale with sub‐micrometer resolution clean surface, which can be applied various combinations substrates. In addition, thermal profile during investigated using finite element method, ideal conditions...

10.1002/adfm.202105302 article EN Advanced Functional Materials 2021-08-21

We studied both cw and time-resolved photoluminescence of colloidal CdSe/ZnS core-shell quantum dots capped with chemical ligands. For the trioctylphosphine oxide QDs, luminescence intensity lifetime were found to be increased increasing temperatures, which can explained by thermal activation carriers trapped at shallow trapping centers. After ligand exchange into 3-mercaptopropionic acid, non-radiative recombination rate was efficiency decreased room temperature. When QDs employed in...

10.1063/1.4745080 article EN cc-by AIP Advances 2012-08-03

Abstract Novel Sulfonium salts with non‐nucleophilic anions were synthesized and applicability of these as initiators was demonstrated by carried out polymerization (photo thermal) epoxides well vinyl ether monomers. Newly showed good activity for the photo thermal polymerization. Synthesis, characterization, have been described. © 2008 Wiley Periodicals, Inc. J Appl Polym Sci, 2008.

10.1002/app.27333 article EN Journal of Applied Polymer Science 2008-01-16

Graphene, with its unique band structure, mechanical stability, and high charge mobility, holds great promise for next-generation electronics. Nevertheless, zero gap challenges the control of current flow through electrical gating, consequently limiting practical applications. Recent research indicates that atomic oxygen can oxidize epitaxial graphene in a vacuum without causing unwanted damage. In this study, we have investigated effects chemisorbed on electronic properties graphene, using...

10.1063/5.0158595 article EN Applied Physics Letters 2023-07-10

We have developed fast bend transition method of pi-cell in low temperature. This cell requires a the liquid crystals (LC) from an initial splay state to before normal driving operation. study analyzed conditions under which this is generated Consequently, by applying waveform that make most LC's dynamic response, using structure top-gate electrode and surface alignment Low Temperature Poly-Silicon (LTPS) Thin Film Transistor (TFT) was established.

10.1889/1.2433608 article EN SID Symposium Digest of Technical Papers 2006-01-01

Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Tae Soo Kim, Byoung Woo Lee, Eunsoon Oh, Sanghoon J. K. Furdyna; Carrier transfer from wetting layer to quantum dots studied by cw-resolved time-resolved photoluminescence in CdSe/ZnSe dot system. Appl. Phys. 15 March 2010; 107 (6): 063517. https://doi.org/10.1063/1.3354064 Download citation file: Ris (Zotero)...

10.1063/1.3354064 article EN Journal of Applied Physics 2010-03-15

We have successfully controlled the number of graphene layers (<italic>n</italic>-layer) by using a Cu–Ni–MgO hetero catalyst having different catalytic activity and carbon solubility.

10.1039/c7ra09305e article EN cc-by-nc RSC Advances 2017-01-01

Adv. Mater. 2022, 34, 2204982 DO: 10.1002/adma.202204982 When originally published, the author name Seungwoo Song was spelled incorrectly. This is hereby corrected as shown in line above; online version of article has also been accordingly.

10.1002/adma.202300755 article EN Advanced Materials 2023-03-01

Graphene, with its unique band structure, mechanical stability, and high charge mobility, holds great promise for next-generation electronics. Nevertheless, zero gap challenges the control of current flow through electrical gating, consequently limiting practical applications. Recent research indicates that atomic oxygen can oxidize epitaxial graphene in a vacuum without causing unwanted damage. In this study, we have investigated effects chemisorbed on electronic properties graphene, using...

10.48550/arxiv.2306.14501 preprint EN other-oa arXiv (Cornell University) 2023-01-01

A conventional image sensor has been developed to see around the world, but its detection optical spectrum limited by material's bandgap. In article number 2007357, Kibum Kang, SangHyeon Kim and co-workers demonstrate broadband using MoS2/InGaAs van der Waals heterostructure. The of MoS2/InGaAs-based device array will light from visible SWIR bands, which can be used for various inspections such as pests.

10.1002/smll.202170078 article EN Small 2021-04-01
Coming Soon ...