A5115604763- Quantum and electron transport phenomena
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- Quantum Information and Cryptography
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- Analytical chemistry methods development
- Generative Adversarial Networks and Image Synthesis
- Laser-induced spectroscopy and plasma
- Cold Atom Physics and Bose-Einstein Condensates
- Human Pose and Action Recognition
- Mercury impact and mitigation studies
- Gas Sensing Nanomaterials and Sensors
- Silicon and Solar Cell Technologies
- Nanofabrication and Lithography Techniques
- Surface Modification and Superhydrophobicity
- Quantum optics and atomic interactions
- Advanced Materials and Mechanics
- VLSI and Analog Circuit Testing
- Physics of Superconductivity and Magnetism
- X-ray Diffraction in Crystallography
- ZnO doping and properties
- Computer Graphics and Visualization Techniques
- Crystallography and molecular interactions
- Thin-Film Transistor Technologies
University of Pennsylvania
2024
Shandong University of Technology
2013-2020
Cambridge Microelectronics (United Kingdom)
2005-2007
University of Wisconsin–Madison
2005
University of Cambridge
2003
Ludwig-Maximilians-Universität München
2001-2003
Center for NanoScience
2001-2003
We define two laterally gated small quantum dots with less than 15 electrons in an Aharonov-Bohm geometry which the coupling between can be changed. measure oscillations for weakly coupled dots. In intermediate regime we study molecular states of double dot and extract magnetic field dependence coherently states.
Design principles for nanostructures are proposed based on the controlled folding of strained thin bilayer films. By controlling geometry films, calculations can predict formation structures such as nanorings, nanodrills, and nanocoils (see Figure). In theory, this approach could be applied to fabrication from other combinations different classes materials.
We report on electron transport through an artificial molecule formed by two tunnel coupled quantum dots, which are laterally confined in a two-dimensional system of ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{A}\mathrm{s}/\mathrm{G}\mathrm{a}\mathrm{A}\mathrm{s}$ heterostructure. Coherent molecular states the dots probed photon-assisted tunneling (PAT). Above 10 GHz, we observe clear PAT as result resonance between microwave photons and states. Below 8 pronounced superposition...
We present measurements on spin blockade in a laterally integrated quantum dot. The dot is tuned into the regime of strong Coulomb blockade, confining ∼ 50 electrons. At certain electronic states we find an additional mechanism suppressing electron transport. This identify as at zero bias, possibly accompanied by change orbital momentum subsequent ground states. support this probing magnetic field and temperature dependence transport spectrum. Weak violation modelled detailed calculations...
Transparent conductive silicon doped zinc oxide (SZO, 3%Si) thin films are grown by direct current magnetron sputtering on glass substrates at room temperature. Experimental results show that the time has a significance impact growth rate, crystal quality and electrical properties of films, have little optical films. The rate decreases with time. resistivity ZnO/Si as increases from 8 to 20 min. However, further, instead. When other conditions kept unchanged, it is found optimum min achieved...
Characterization of a trench-isolated double quantum dot fabricated from silicon germanium has been carried out via low-temperature electron transport measurements. Coulomb oscillations have observed, and the mean energy required to add single was 3.9meV at 4.2K 2.9meV 40mK. The total capacitance double-quantum increased 40aF 55aF
Using picosecond millimetre-wave impulses we probe the electronic structure and dynamics of electrons in a single quantum dot—the artificial atom—which is essential for understanding their applications such as computational elements detectors. Although dc transport shows strong elastic cotunnelling Coulomb blockade (CB) regime, this effect suppressed under whose energies are commensurate with those dot. Under non-zero bias find excited-state resonances induced complex photoconductance well...
Solid-state quantum dots, in which the charge and spin of excess carriers are controllable, strong candidates for future nanoelectronics information processing. Devices based on SiGe compatible with conventional silicon complementary metal–oxide–semiconductor processing, allows large-scale integration. The fabrication double dots using electron beam lithography reactive ion etching is described. characterized electrically at cryogenic temperatures mixing two microwave signals demonstrated.
Silicon quantum dot devices stand as promising candidates for large-scale computing due to their extended coherence times, compact size, and recent experimental demonstrations of sizable qubit arrays. Despite the great potential, controlling these arrays remains a significant challenge. This paper introduces new virtual gate extraction method quickly establish orthogonal control on potentials individual dots. Leveraging insights from device physics, proposed approach significantly reduces...
Assistive drawing aims to facilitate the creative process by providing intelligent guidance artists. Existing solutions often fail effectively model intricate stroke details or adequately address temporal aspects of drawing. We introduce hyperstroke, a novel representation designed capture precise fine details, including RGB appearance and alpha-channel opacity. Using Vector Quantization approach, hyperstroke learns compact tokenized representations strokes from real-life videos artistic...
Low-temperature electron transport measurements have been performed on a trench-isolated silicon-germanium (SiGe) double quantum dot. Transport through the quantum-dot structure was via Coulomb blockade, allowing control of single electrons. As drain-source bias across dot increased, it found that peak broadened and second smaller developed in proportion to source-drain voltage. The behaved predominately as but confinement potential not simply well. Additionally, two extra peaks appeared...