A5056078883- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Photonic and Optical Devices
- Semiconductor materials and interfaces
- Advanced Memory and Neural Computing
- Network Security and Intrusion Detection
- Advanced Malware Detection Techniques
- Anomaly Detection Techniques and Applications
- Ferroelectric and Negative Capacitance Devices
- graph theory and CDMA systems
- Smart Grid Security and Resilience
- Nanowire Synthesis and Applications
- VLSI and Analog Circuit Testing
- Service-Oriented Architecture and Web Services
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor Quantum Structures and Devices
- Cryptography and Data Security
- Coding theory and cryptography
- Chaos-based Image/Signal Encryption
TU Wien
2023-2025
Royal Holloway University of London
1996-2005
Here, we present a Ge based reconfigurable transistor, capable of dynamic run-time switching between n-and p-type operation with enhanced performance compared to state-of-the-art Si devices. Thereto, have monolithically integrated an ultra-thin epitaxial and defect-free layer on insulator platform. To evade the commonly observed process variability Ni-germanides, Al-Si-Ge multi-heterojunction contacts been employed, providing stability required equal injection capabilities for electrons...
Reconfigurable field-effect transistors (RFETs), combining n-and p-type operation in a single device, have already shown promising simulation results for enhancing performance and functionality conventional devices further enabling novel adaptive computing concepts. With recent advances the formation of high-quality monolithic single-crystalline Al-Si Schottky contacts providing reproducible way to fabricate RFETs with highly symmetric operation, we are now able demonstrate their integration...
Abstract Reconfigurable field‐effect transistors, capable of being dynamically programmed during run‐time, overcome the static nature conventional complementary metal‐oxide semiconductors by reducing transistor count and circuit path delay. Thereby, SiGe Ge are predicted to boost drive currents, switching speed reduce power consumption. Nevertheless, Ge‐based reconfigurable prototypes have so far fallen short in reaching both promised performance due interface instability their contacts gate...
Fine grain reconfigurability carried out at the transistor level, i.e. ability to switch between n- and p-type operation, offers new possibilities for highly efficient logic gates. In particular, XOR- Majority gate circuit implementations can considerably benefit from reconfigurable transistors, as they require less than half of count needed in conventional static CMOS technology. Using a total eight on-state symmetric field effect transistors fabricated monolithic Al-Si heterostructures, we...
A promising approach to advance electronics beyond static operations is enhance state-ofthe- art systems by the functional diversification of transistors. Here, we experimentally demonstrate that an ultra-thin Ge channel implemented on a Si insulator platform enables run-time switchable symmetric pand n-type field-effect transistor operability as well prominent feature distinct room-temperature negative differential resistance. Temperature dependent bias spectroscopy utilized map electronic...
Implementing only tens of nanometer-thin Ge and Ge-rich SiGe nanosheets on SOI is expected to boost performance metrics next-generation electronic devices, such as reconfigurable field effect transistors [1]. However, an inherent lattice mismatch between Si drastically limits the thickness high-quality layers a few monolayers, i.e., far too thin for practical nanosheet device applications. Thus, date, many prototype nanoelectronics concepts are based nanowires' vapor-liquid-solid (VLS)...
Reconfigurable field effect transistors (RFET) merge the functionality of p-and n-type at runtime upon application a dedicated control voltage. More recently additional functionality, like negative differential resistance has been able to be added RFETs. Although higher complexity in steering devices is given set novel circuits and systems developed, that not only cope with signal overhead, but make efficient use enhancement allow for circuit topologies applications have so-far hindered...