A5072440668- GaN-based semiconductor devices and materials
- Plasmonic and Surface Plasmon Research
- Orbital Angular Momentum in Optics
- Photonic and Optical Devices
- Ga2O3 and related materials
- Optical Coatings and Gratings
- Near-Field Optical Microscopy
- Photorefractive and Nonlinear Optics
- Photonic Crystals and Applications
- Advanced Fiber Laser Technologies
- Semiconductor materials and devices
- Antenna Design and Optimization
- ZnO doping and properties
- Cooperative Communication and Network Coding
- Metamaterials and Metasurfaces Applications
- Advanced Antenna and Metasurface Technologies
University of Washington
2025
Hanyang University
2023-2024
National Yang Ming Chiao Tung University
2000
Indium isoelectronic doping was found to have profound effects on electrical properties of GaN films grown by metalorganic chemical vapor deposition. When a small amount In atoms introduced into the epilayer, ideality factor n-GaN Schottky diode improved from 1.20 1.06, and its calculated saturation current could be reduced 2 orders magnitude as compared that undoped sample. Moreover, it is interesting note isodoping can effectively suppress formation deep levels at 0.149 0.601 eV below...
Abstract Thin-film lithium niobate (TFLN) has emerged as a promising platform for integrated photonics due to its exceptional material properties. The application of freeform topology optimization TFLN devices enables the realization compact designs with complex functionalities and high efficiency. However, stringent fabrication constraints present significant challenges optimization, particularly in nonlinear photonic devices. In this work, we propose an inverse design methodology that...
Optical vortices (OVs) have rapidly varying spatial phase and optical energy that circulates around points or lines of zero intensity. Manipulation OVs offers innovative approaches for various fields, such as sensing, communication, imaging. In this work, we demonstrate the correlation between absorption enhancement in two types structures. First, introduce a simple planar one-dimensional (1D) structure manipulates using coherent light sources. The shows maximum 6.05-fold gap depending on...
Time-resolved photoluminescence spectra were used to characterize isoelectronically doped GaN:In films. Our results indicate that the recombination lifetime of donor-bound-exciton transition undoped GaN exhibits a strong dependence on temperature. When In is into film, decreases sharply from 68 30 ps, regardless measured temperature and source flow rate. These observations might be related isoelectronic impurity itself in GaN, which creates shallow energy levels predominate process.
Optical vortices (OVs) have rapidly varying spatial phase and optical energy that circulates around points or lines of zero intensity. Manipulation OV offers innovative approaches for various fields, such as sensing, communication, imaging. In this work, we demonstrate the correlation between OVs absorption enhancement in two types structures. First, introduce a simple planar one-dimensional (1D) structure manipulates using coherent light sources. The shows maximum 6.05-fold gap depending on...