A5042624901- Semiconductor Quantum Structures and Devices
- GaN-based semiconductor devices and materials
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- Spectroscopy and Laser Applications
- Advanced Surface Polishing Techniques
- Metal and Thin Film Mechanics
Chinese Academy of Sciences
2013
Suzhou Institute of Nano-tech and Nano-bionics
2013
High-efficient GaN-based laser diodes (LDs) with tunnel junction are designed by replacing conventional p-type AlGaN cladding layers and GaN contact lower-resistant n-type contact. In addition, the characteristics of LDs numerically investigated using commercial software lastip. It is found that performance these greatly improved. As a comparison, absorption loss non-radiative recombination reduced. The threshold current series resistance decreased 12% 59%, respectively, slope efficiency...
Self-organized InGaN quantum dots (QDs) with emission wavelength from green to red range have been grown on GaN templated c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The effects of matrix layer composition the structural and optical properties QDs investigated. A continued growth is observed during In0.1Ga0.9N layer, which results in an increase QDs' size. By using instead one, annealing induced blue-shift energy can be suppressed. After top cap a larger...