A5101943304- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- ZnO doping and properties
- Ga2O3 and related materials
Kyoto University
2024-2025
In state-of-the-art red InGaN light-emitting diodes (LEDs), an InGaN-based blue single quantum well (SQW) is used as underlying layer to improve the emission efficiency. However, role of SQW not fully understood. This study investigates structural and optical properties by atomic force microscopy (AFM) photoluminescence (PL) spectroscopy under scanning near-field (SNOM). The AFM images reveal deep shallow V-pits, corresponding screw mixed threading dislocations (TDs). SNOM-PL intensity image...
To investigate nonradiative recombination processes in indium gallium nitride (InGaN)‐based red light‐emitting diodes (LEDs), an InGaN‐based LED with a hybrid quantum well (QW) structure consisting of and blue single wells (SQWs) is characterized by micro‐photoluminescence ( μ ‐PL) spectroscopy. The ‐PL mapping the emission reveals numerous dark spots various sizes contrasts. Not only (from SQW) but green bands are observed at some spots, suggesting that (In) segregation one causes emission....