A5103249689- Radiation Effects in Electronics
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor Quantum Structures and Devices
- solar cell performance optimization
- Radiation Shielding Materials Analysis
- Advanced Radiotherapy Techniques
- GaN-based semiconductor devices and materials
- Nuclear Materials and Properties
- High-Voltage Power Transmission Systems
- Radiative Heat Transfer Studies
- Silicon and Solar Cell Technologies
- Advanced X-ray and CT Imaging
- Semiconductor materials and interfaces
- Technology and Security Systems
- Advanced Control and Stabilization in Aerospace Systems
- Chalcogenide Semiconductor Thin Films
- Advanced Sensor Technologies Research
- Smart Grid and Power Systems
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Nuclear materials and radiation effects
- Graphite, nuclear technology, radiation studies
- Advanced Materials and Semiconductor Technologies
China Academy of Engineering Physics
2018-2023
Institute of Electronics
2015
Lawrence Berkeley National Laboratory
2001
Plastic relaxation in metamorphic high electron mobility transistor (MHEMT) structures was investigated by x-ray reciprocal mapping and high-resolution transmission microscopy (HRTEM). X-ray data indicates that In(Ga)AlAs M buffers with a linearly graded buffer an inverse step are completely strain compensated at the buffer-active area interface. HRTEM shows reduction of dislocation density from 109 to 106 cm−2 through buffer. Optimized MHEMT were found exhibit low rms roughness around 2 nm...
This paper studies test and evaluation methods of electromagnetic pulse effects on several sensitive objects analyzes characteristic parameters damage effects. The optical fiber transmission measure monitoring systems are established. coupling the computer networks, wireless equipments electric power lines discussed in detail. experimental results show that whole irradiation is greater than local fast rising edge network more obvious low because latter weaker. It also known inefficient with...
A novel trench Schottky rectifier with an isolated gate (IG-TSR) is proposed and investigated by simulation. It features isolation of a MOS poly-gate from anode metal in conventional barrier (TMBS) rectifier. In the fabrication process, can be created modifying layout pattern without any additional process step or manufacturing cost. Because metal, capacitance between cathode (Cds) IG-TSR decreases significantly, which results fast switching performance. According to simulation results,...
The TID (total ionizing dose) in-situ experiments of LC1020B, an anti-fuse FPGA (Field Programmable Gate Array) device, were designed and carried out under different dose rates, the influence rate on effect was studied. experimental results show that: 1) irradiation failure rates has nothing to do with input voltage parameter exceeding standard. 2) decrease cobalt source [171, 26.83, 2.68 mGy(Si)/s], threshold [168, 229, 334 Gy(Si), respectively] gradually increased, showing obvious...
Abstract In this paper, MCNP was used to simulate the shielding efficiency of different materials and new 3D alloy (an Ta W) with surface densities for low energy X-ray spectrum (<200keV), transmission single spectrum. The simulation results show that is a material high efficiency, which approximate W. higher density is, greater is. With increase energy, transmissivity increases. At about 69keV, suddenly decreases minimum, then increases energy. And verification experiment designed,...
Lead lanthanum zirconate titanate (PLZT) has a broad application prospect for energy storage devices with high density, since it possesses excellent dielectric and properties. To investigate the irradiation damage to PLZT induced by neutrons different energy, primary energetic recoil spectra of each kind element are first extracted from transportation simulations ranging 1 14 MeV, respectively. Then, displacement damages (including vacancies interstitial atoms) type simulated based on binary...