A simple technique for the computation of proximity effect in electron-beam lithography is presented. The calculations give results exposure intensity received at any given point a pattern area using reciprocity principle. Good agreement between computed and experimental data was achieved.

This article describes a new negative-tone photoresist, SU-8, for ultrathick layer applications. An aspect ratio of 10:1 has been achieved using near-ultraviolet lithography in 200-μm-thick layer. The use this resist building tall micromechanical structures by deep silicon reactive-ion etching and electroplating is demonstrated. Using SU-8 stencils, etched depths ≳200 μm Si electroplated 130-μm-thick Au with near-vertical sidewalls have achieved.

The first device performance results are presented from experiments designed to assess FET technology feasibility in the 0.1-µm gate-length regime. Low-temperature design considerations for these dimensions lead a 0.15-V threshold and 0.6-V power supply, with forward-biased substrate. Self-aligned almost fully scaled devices simple circuits were fabricated by direct-write electron-beam lithography at all levels, gate lengths down 0.07 µm. Measured characteristics yielded over 750-mS/mm...

Lithography with an array of miniaturized scanning electron-beam columns presents one the most promising high-throughput possibilities for fabrication devices feature sizes less than 100 nm. With electron beams no mask is required and necessary resolution alignment overlay structures are realizable. arrays microcolumns, lithography throughput a single column can be multiplied. The approach also used number related applications such as metrology, inspection, testing, etc. We review status...

A scanning soft x-ray microscope has been built and operated at the National Synchrotron Light Source. It makes use of a mini-undulator as bright source 3.2-nm photons. An electron beam fabricated Fresnel zone plate focuses onto specimen, which is scanned under computer control. The stage can be moved by both piezoelectric transducers stepping motors, location monitored high-speed laser interferometer. X rays transmitted through specimen are detected using flow proportional counter. Images...

Aiming to improve on the poor smoothness and longer paths generated by traditional Hybrid A-star algorithm in unstructured environments with multiple obstacles, especially confined areas for autonomous vehicles, a path planning method based hierarchical clustering trichotomy is proposed. This first utilizes Prewitt compass gradient operator (Prewitt operator) identify obstacle boundaries discretize boundaries. Then, it employs single linkage cluster obstacles Subsequently, clustered points...

In recent years, considerable progress has been made on an approach based a novel concept which combines scanning tunneling microscope, microfabricated lenses, and field emission technologies to achieve microminiaturized low-voltage electron beam columns with performance surpassing the conventional column. High throughput lithography is potentially very important application for these measure only millimeters in dimensions. This be achieved using array of minicolumns parallel multibeam mode...

The performance of miniaturized electron optical systems comprising a field emission microsource and microlens for probe forming has been studied. A complete system measuring millimeters in length diameter with exceeding that conventional over wide range potentials (100 V–10 kV) working distances (up to 10 mm) appears be feasible. scanning tunneling microscope aligned offers well suited this application selective scaling approach developed allow applied. Such can significant importance many...

A fully-ion-implanted miniature 8192-bit random-access memory chip has been fabricated using electron-beam lithography with minimum linewidth between 1 and 1.5 μm advanced Si FET technology. Device structure, processing steps, mask transfer, reactive ion etching processes capable of fabricating device structures in the micrometer submicrometer dimensions are described. With a 1.25 μm, occupies an area 1.1×1.6 mm array density 5 million bits/in.2 (0.8 bits/cm2). typical readout access time 90...

A miniaturized 1 kV electron beam column with a 20×20 mm square footprint for application in arrayed lithography was developed. The actual forming optics measured from the emitter to last electrode focusing Einzel lens is only 3.5 length. source miniaturized, high brightness (120 μA/sr), low heating power (<1.5 W) Zr/O/W Schottky field that provides stable current <1%/h fluctuations. custom designed, ultralow profile (0.8 high) annular microchannel plate (MCP) detector fitted...

We have built and tested a 1 keV electron-beam microcolumn that focuses nA of beam current into 10 nm full width half-maximum diameter at working distance mm. The electron source is miniaturized Zr/O/W Schottky field emitter with 150 μA/sr angular emission density operating about 1800 K only 100 μm from silicon membrane extractor electrode. actual 3.5 mm long assembled mainly electrodes. Improved einzel lens design fabrication allowed the operation this focusing element in accelerating mode....

The ability to fabricate structures with lateral dimensions in the sub-100-nm range has opened a new field of research. This paper first reviews recent advances nanolithography techniques, brief discussion their relative merits and fundamental limits. Special emphasis is given scanning electron-beam method, which most widely used method at present time. two main areas nanostructure research are device technology basic science. Highlights number exploratory programs these presented.

A microcolumn array has been designed, fabricated, and tested. The 2×2 a 2 cm pitch operates at 1 keV. Key components include vertical interconnects, silicon low-distortion octupole deflectors, miniature long-range flexure-based tip positioners, low-power thermal field emitters. Initial results show no observable crosstalk between columns during simultaneous operation 50 MHz beam blanking rate. Preliminary lithography are presented.

A computer-controlled electron-beam microfabrication system has been developed for evaluation of micron and submicron lithographic technologies. Direct large-field-device exposures complex patterns have processed FET bubble memory fabrication. Experimental also made to allow mask fabrication alternative exposure apparatus. The exposes the electron-sensitive resist by sequentially filling in pattern elements (cells), whose geometry size are determined an off-line data processor. Abutting line...

ZEP-520 and KRS resist systems have been evaluated as candidates for use in low voltage electron beam lithography. is a conventional chain scission which has positive tone over two orders of magnitude exposure dose. chemically amplified can be easily reversed with sensitivity ∼8 μC/cm2 at 1 keV. Both are shown to sensitivities ∼1 area exposures keV electrons. A decrease contrast 50 nm thick layers seen when lowered from 2 keV, indicating nonuniform energy deposition the thickness. High...

As a continued effort to improve the performance of low energy scanning electron probe systems for application in microscopy, lithography, metrology, etc., miniaturized beam columns, approximately 3 mm length, demonstrating size 10 nm with current ≥1 nA at 1 keV, have been successfully developed. This paper presents status, future directions and potential applications these microcolumns.

An overview is presented of our work to explore the extendibility silicon FET technology 0.1-µm-gate-length level. Self-aligned, n-channel, polysilicon-gated FETs were designed for operation at 77K, with reduced power-supply voltage. Direct-write electron-beam lithography was used pattern all levels, while other processing followed established lines. Noteworthy results included observation a clear manifestation velocity overshoot, which contributed achieving extrinsic transconductances above...

This paper discusses the fabrication of 1 µm minimum linewidth FET polysilicon-gate devices and circuits. These were designed for tight dimensional ground rules (resolution, control, overlay) achievable using direct wafer write scanning electron-beam lithography with individual chip registration. The present work focuses on vector-scan technology processing, while other papers in this series discuss aspects work. Different types MOSFET chips written 57 mm Si wafers a totally automated system...

An experimental automatic registration system is discussed that capable of precisely overlaying two or more levels a microcircuit pattern written by an electron-beam lithographic machine. Because positional information the marks arrives at detector in form random discrete quanta, it subject to statistical fluctuations inherent all such systems. Achievement signal-to-noise ratio adequate for precise registrations with inherently noisy backscattered electrons and without overexposure resist...

Use of a scanning tunneling microscope (STM) controlled field emission tip in conjunction with microlenses has been explored to form an exceptionally high brightness electron source and low aberration beam forming system at the low-keV energy range. In its basic configuration, STM feedback principle is used for precision x, y, z alignment microlens self-aligned (SAFE) microsource. The can be made using microfabrication techniques on silicon or other suitable substrates dimensions reduced by...

The fabrication of microstructures with minimum dimensions below 100 nm introduces several additional problems not normally associated electron-beam lithography at the 1/2 to 1 μm level. quality a resist image, when defined by an electron beam pattern generator, depends strongly upon exposure conditions such as energy and dose. Another important factor is substrate, since it greatly influences range amount backscattered electrons and, hence, contrast achievable in given system. There...

A thin dichroic resist or an opaque metal is directly applied to a deep-UV and delineated with e-Beam exposure tool conventionally. This intimately contacted pattern now serves as portable mask that can be carried the wafer blanket station for delineation of produce high aspect ratio images controlled profiles. In particular, AZ1350J/PMMA AZ1350J/aluminum/PMMA systems are discussed. Sample results showing submicrometer PMMA in thicknesses ranging from 1.6 1.9 μm using 0.2 thick AZ PCM...

A novel technique which allows the true magnetic charge distribution of a sample to be obtained from raw MFM image by deconvolution is presented. The formation force microscopy (MFM) images can considered as convolution tip response function and divergence magnetization. key element in this method function, contains information about geometric properties tip. This imaging flux emanating end an ultranarrow single-domain nickel strip approximates point charge. An recorded bits with same...

A technique for the measurement of beam diameter and positional stability an electron with respect to substrate using anisotropically etched silicon edge is described. Measurements are done either in a scanning mode measure or stationary noise. This has been used quantitative analysis resolution 8-nm spot size lithography system. The detection limit position measurements <0.1 nm. Applications mechanical vibrations acoustical noise, deflection amplifier magnetic interference, eddy...