Abstract Two‐dimensional non‐layered tellurene (Te) can serve as a promising candidate in transistor applications because of its high carrier mobility and air stability. However, it is still quite challenging aspect ultra‐thin channel gate‐control ability conventional metal‐oxide‐semiconductor field‐effect architecture. This work proposes facile thinning strategy for solution‐proceed Te flakes fabricates junction (JFET) architecture, that has well addressed the above‐mentioned two issues....

The most reported two-dimensional (2D) reconfigurable multivalued logic (RMVL) devices primarily involve a planar configuration and carrier transport, which limits the high-density circuit integration high-speed operation. In this work, vertical transistors with MoTe

Narrow linewidth lasers are indispensable for coherent optical systems, including communications, metrology, and sensing. Although compact semiconductor with narrow linewidths low noise have been demonstrated, their spectral purity typically relies on hybrid or heterogeneous external cavity feedback. Here, we present a theoretical experimental demonstration of free injection locking (HF OIL) laser. By integrating topological interface state extended (TISE) laser micro ring resonator (MRR) an...

We have developed an integrated dual-band photonic filter (PF) utilizing equivalent chirped four-phase-shifted sidewall-sampled Bragg gratings (4PS-SBG) on a silicon-on-insulator platform. Using the reconstruction equivalent-chirp technique, we designed linearly 4PS with two π-phase shifts (π-PSs) positioned at 1/3 and 2/3 of grating cavity, introducing passbands in + first order channel. Leveraging significant thermo-optic effect silicon, tuning is achieved through microheaters (MHs) chip...

Abstract Polarimetric photodetectors hold significant promise in optical communication and polarization imaging applications due to their additional ability detect states of light. The strategy multiple modulation plays a crucial role performance optimization multi‐valued logic output, enabling higher information transmission density clearer recognition. Following this context, Ta 2 PdSe 6 /MoTe semimetal/semiconductor heterojunction‐based polarimetric photodetector with multi‐control that...

Recently, interface scattering and low mobility have significantly impeded the performance of two-dimensional (2D) P-type transistors. 2D semiconductor tellurium (Te) has garnered significant interest owing to its unique atomic chain crystal structure, which confers ultrahigh hole mobility. van der Waals heterojunction enhances transistor by reducing at gate-channel interface, attributed high-quality interface. In this study, we present Te/gallium arsenide (GaAs) hybrid dimensional JFETs...

Abstract Advances in 1D topological photonic crystals have enabled robust light‐emitting devices through a interface state at the cavity center. In this study, TIS‐extended crystal (1D‐TISE‐PhC) structure both theoretically and experimentally is demonstrated. linearly dispersive, zero‐index integrated with four‐phase shift (4PS) sampled grating so that photons propagate without phase differences, enhancing robustness extending TIS. This extension yields more uniform photon distribution along...

We simulate and demonstrate experimentally an inner-wall grating double slot micro ring resonator (IG-DSMRR) with a center radius of only 6.72 µm based on the silicon-on-insulator platform. This novel photonic-integrated sensor for optical label-free biochemical analysis boosts measured refractive index (RI) sensitivity in glucose solutions to 563 nm/RIU limit detection value being 3.7 × 10 −6 RIU (refractive units). The concentration sodium chloride can reach 981 pm/%, minimum 0.02%. Using...

Abstract Van der Waals (vdW) heterostructures, formed by stacking different two‐dimensional (2D) materials, have emerged as a promising platform for next‐generation optoelectronic devices through band engineering. While various all‐2D and mixed‐dimensional heterojunction phototransistors based on p–n junctions or Schottky been developed, their performance, often constrained the trade‐off between responsivity ( R ) response speed, limits widespread application. Here, dual‐mode phototransistor...

The micro- and nanostructures of III-nitride semiconductors captivate strong interest owing to their distinctive properties myriad potential applications. Nevertheless, challenges endure in managing the damage inflicted on crystals through top–down processes or achieving extensive control over large-area growth these microstructures via bottom-up methods, thereby impacting optical electronic properties. Here, we present novel epitaxially grown 3D GaN truncated pyramid arrays (TPAs) patterned...

Integrated microring resonator structures based on silicon-on-insulator (SOI) platforms are promising candidates for high-performance on-chip sensing. In this work, a novel sidewall grating slot (SG-SMRR) with compact size (5 µm center radius) the SOI platform is proposed and demonstrated experimentally. The experiment results show that refractive index (RI) sensitivity limit of detection value 620 nm/RIU 1.4 × 10-4 RIU, respectively. concentration minimum 1120 pm/% 0.05%, Moreover,...

2D p–n homojunctions exhibit distinctive structural properties, including continuous energy band structure and perfect lattice matching, making them promising for the design of optoelectronic electronic devices. Herein, we present a straightforward approach to fabricate highly sensitive, self-driven photodetector based on WS2 homojunction. The p-doping interface is easily achieved through water treatment, eliminating need chemical dopants. There an evident reversal polarity in devices...

Two-dimensional (2D) materials have been widely demonstrated as promising candidates for next generation photodetectors, while the noticeable channel current is still a limiting factor photodetection sensitivity. In this work, interface engineering has developed by constructing vertical pn and Schottky junction in 2D WS2 channel, resulting reduced dark noise spectral density, significantly improving Specifically, bottom surface coupled with p-type tellurium (Te) nanoribbon gold (Au) stripes,...

Metal-oxide-semiconductor field-effect transistors as basic electronic devices of integrated circuits have been greatly developed and widely used in the past decades. However, thickness conducting channel decreases, interface scattering between gate oxide layer significantly impacts performance transistor. To address this issue, van der Waals heterojunction (vdWJFETs) proposed using two-dimensional semiconductors, which utilize built-in electric field at sharp to regulate conductance without...

Polarization control is at the heart of high-capacity data optical communication systems, such as polarization-division multiplexers and Stokes vector modulation transmitters. Despite passive polarization being mature, realization monolithically integrated controllers single longitudinal mode light sources, distributed-feedback (DFB) lasers, importance. In this research, we report an AlGaInAs multiple-quantum-well photonic circuit device which can state output source, consisting a converter...

A monolithic dual-wavelength DFB laser array based on sidewall gratings and a novel modulation of the grating coupling coefficient is proposed demonstrated experimentally.The distribution along cavity modulated by changing alignment between two sidewalls.The frequency difference lasing modes can be length recess depth.A series microwave signals in range 50 GHz to 59 observed after beating optical lines photodetector.The measured linewidths are 250 kHz 850 when 1200 μm 1000 μm, respectively.

We propose and demonstrate experimentally a dual-wavelength DFB laser based on four phase-shifted sampled Moiré grating (4PS-SMG). By designing 4PS gratings with different sampling periods each side of the ridge waveguide, an equivalent introduction two <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\pi $ </tex-math></inline-formula> phase shifts within cavity is achieved, enabling device to exhibit...

Abstract 2D van der Waals (vdWs) heterojunctions exhibit facile fabrication process and tunable optoelectronic properties. However, suppressing interfacial charge traps multifunctional photoresponse remain significant challenges. Here, the study designs a phototransistor based on ambipolar MoTe 2 /graphene (Gr)/p‐type SnS 0.25 Se 0.75 double vdWs vertical heterostructure via alloy engineering. The middle Gr interlayer is pivotal in reducing traps, facilitating photocarrier transportation,...

A four-laser array based on sampled Bragg grating distributed feedback (DFB) lasers in which each period contains four phase-shift sections is proposed, fabricated, and experimentally demonstrated. The wavelength spacing between adjacent accurately controlled to 0.8 nm ± 0.026 the have single mode suppression ratios larger than 50 dB. Using an integrated semiconductor optical amplifier, output power can reach 33 mW linewidth of DFB be as narrow 64 kHz. This laser uses a ridge waveguide with...

Polarization-sensitive photodetectors in the ultraviolet (UV) region have been favored for their great meaning field of military and civilian. UV based on GaN aroused much attention due to high photocurrent sensitivity. However, dependence external power sources limited sensitivity polarized light significantly impede practical application these UV-polarized photodetection. Herein, a polarization-sensitive photodetector ReSe2/GaN mixed-dimensional van der Waals (vdWs) heterojunction is...

A novel AlGaInAs/InP electro-absorption modulated laser (EML) with a simple fabrication process is proposed, in which the modulator (EAM) has 10 nm blueshift induced by quantum well intermixing (QWI) and monolithically integrated sidewall grating distributed-feedback (DFB) working at 1.55 μm wavelength. The extent of QWI characterized diffusion length. confined Stark effect (QCSE) simulated terms extinction ratio (ER) chirp for bias electric fields from 0 kV/cm to 200 different amounts...

Based on the analysis of existing project management maturity models and software capability models, this study proposes a novel two-dimensional (TPMM) model, which emphasizes business (PBM) information technology application (ITA) simultaneously. It is first to present TPMM concept with PBM ITA maturity, evaluate based 49 processes PMBOK. After maturities are obtained using an expert evaluation method, knowledge area enterprise layers can be calculated by statistical method. The comparison...