A5000620889- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Semiconductor materials and devices
- ZnO doping and properties
- Metal and Thin Film Mechanics
- Semiconductor Quantum Structures and Devices
- Ion-surface interactions and analysis
- ATP Synthase and ATPases Research
- Silicon Carbide Semiconductor Technologies
- Semiconductor Lasers and Optical Devices
- Photocathodes and Microchannel Plates
- Laser-induced spectroscopy and plasma
- Mitochondrial Function and Pathology
- Metalloenzymes and iron-sulfur proteins
- Photonic and Optical Devices
- Diamond and Carbon-based Materials Research
- Acoustic Wave Resonator Technologies
- Advanced battery technologies research
- Plasma Diagnostics and Applications
- Heme Oxygenase-1 and Carbon Monoxide
- S100 Proteins and Annexins
- Gaze Tracking and Assistive Technology
- Electron and X-Ray Spectroscopy Techniques
- Advanced NMR Techniques and Applications
- Microfluidic and Capillary Electrophoresis Applications
SixPoint Materials (United States)
2013-2025
University of California, Santa Barbara
2004-2009
Japan Science and Technology Agency
2007-2008
Panasonic (Japan)
1996-2002
Nagoya University
1999
Kyoto University
1993-1994
Osaka University
1981-1988
GaN was grown on a 3×4 cm 2 oval-shaped seed crystal by the ammonothermal method. About 15-µm-thick films were uniformly each side of seed. The Ga-polar surface filled with pits whereas N-polar featureless. photoluminescence (PL) characterization also indicated qualitatively uniform optical properties crystal. PL emission from Ga-face dominated yellow luminescence that N-face showed dominant band-edge emission. These preliminary growth an over-1” and demonstrated scalability
The amino acid sequence of an intrinsic inhibitor mitochondrial ATPase isolated from yeast was completed by using solid-phase sequencing and conventional procedures. found to be composed 63 residues, lack tryptophan, cysteine, tyrosine, have a molecular weight about 7,383. characterized as basic protein with 16 13 acidic several clusters residues were noted. Some comments are made on the hydrophobic acids presence repeated sequences.
GaN is rapidly gaining attention for implementation in power electronics but still impacted by its high density of threading dislocations (TDs), which have been shown to facilitate current leakage through devices limiting their performance and reliability. Here, we discuss a novel photoluminescence (PL) imaging study TDs regions within vertically structured p-i-n (PIN) diodes consisting metalorganic chemical vapor deposition (MOCVD) epitaxial layers grown on ammonothermal (am-GaN)...
This article presents manganese‐doped gallium nitride (Mn–GaN) bulk crystals with various manganese concentrations grown by the near‐equilibrium ammonothermal method and characterization of photoconductive semiconductor switches (PCSS) fabricated them. The concentration Mn in GaN affects coloration crystal as well resistivity. Microstructures evaluated mapping full width at half maximums X‐ray rocking curves from 002 201 diffractions do not show obvious degradation for lower than mid‐10 19...
A remarkable progress was made in GaN wafer fabrication via the basic ammonothermal method. Bulk crystals were grown on platelets supercritical ammonia at 575 °C and 220 MPa with sodium amide. The showed three-dimensional polyhedron shape size of more than 5 mm. Clear crystallographic facets N-face m planes observed although Ga-face decorated angled {1011} planes. X-ray diffraction revealed multiple grains whose individual full width half maximum ω scan 200–400 arcsec. C plane wafers...
Devices based on gallium nitride (GaN) have great potential for high power switching applications due to the breakdown field and electron mobility. In this work, we present a vertical GaN-on-GaN PN diode using dielectric constant material, BaTiO3, electrical management voltages, in together with an optimized guard-ring plate design. Numerical simulation shows that high-k dielectrics implemented, peak at interface is mitigated from 3.5 3.1 MV/cm under reverse bias of −9.05 kV. The device...
This paper reports two inch gallium nitride (GaN) substrates fabricated from bulk GaN crystals grown in the near equilibrium ammonothermal method. 2'' wafers sliced have a full width half maximum of 002 X-ray rocking curve 50 arcsec or less, dislocation density mid-105 cm−2 and an electron about 2 × 1019 cm−3. The high is attributed to oxygen impurity crystal. Through extensive surface preparation, Ga wafer shows atomic step structure. Additionally, removal subsurface damage was confirmed...
This paper reviews the near-equilibrium ammonothermal (NEAT) growth of bulk gallium nitride (GaN) crystals and reports evaluation 2″ GaN substrates 100 mmbulk crystal grown in our pilot production reactor. Recent progress oxygen reduction enabled growing NEAT with lower residual oxygen, coloration, optical absorption. The concentration was approximately 2 × 1018 cm−2, absorption coefficient 1.3 cm−1 at 450 nm. Maps full-width half maximum (FWHM) X-ray diffraction rocking curveswere generated...
This work reports on the fabrication and properties of a homojunction gallium nitride (GaN) p-i-n (PIN) rectifier fabricated free-standing GaN substrate. Uniform device performance is achieved with breakdown voltage (BV) <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$ > {1.2}$ </tex-math></inline-formula> kV low ON-resistance notation="LaTeX">$\times $ area ( notation="LaTeX">${R}_{{...
Single crystalline GaN was grown on c -plane free-standing seeds via fluid transport by the ammonothermal method. Ammonothermal growth carried out in an ammonobasic solution with a metallic Ga nutrient placed lower-temperature zone. The thickest film obtained so far is ∼45 µm, which N-face of seed. interface contained numerous voids and defects, whereas microstructure close to surface greatly improved. major defects were mixed-character threading dislocations. estimated dislocation density...
Journal Article Binding Properties of an Intrinsic ATPase Inhibitor and Occurrence in Yeast Mitochondria a Protein Factor which Stabilizes Facilitates the to F1F0-ATPase Get access Tadao HASHIMOTO, HASHIMOTO Department Physiological Chemistry, Medical School, Osaka UniversityKita-ku, Osaka, 530 Search for other works by this author on: Oxford Academic PubMed Google Scholar Yukuo YOSHTDA, YOSHTDA Kunio TAGAWA The Biochemistry, Volume 94, Issue 3, July 1983, Pages 715–720,...
The ATPase inhibitor from yeast, Saccharomyces cerevisiae, was found to strongly inhibit the activity when it preincubated in an acidic pH region. This paper describes conformational changes of region, as studied by 1H NMR spectroscopy. In range 7.43 4.48, two conformations were detected. With lowering this one conformation increased at expense other. conformations, His 39 had different pKa values which determined 23 degrees C be 6.08 +/- 0.04 and 5.91 0.03 pH-titration curves 39. exchange...