A5101492431- GaN-based semiconductor devices and materials
- Advanced Measurement and Metrology Techniques
- Scientific Measurement and Uncertainty Evaluation
- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
- Optical Systems and Laser Technology
- Ga2O3 and related materials
- Optical Network Technologies
- Advanced Measurement and Detection Methods
- Semiconductor Quantum Structures and Devices
- Surface Roughness and Optical Measurements
- Magnetic properties of thin films
- Sensor Technology and Measurement Systems
- Music Technology and Sound Studies
- Adaptive optics and wavefront sensing
- Power Systems and Technologies
- Advanced optical system design
- Elevator Systems and Control
- Organic Electronics and Photovoltaics
- Advanced Sensor and Control Systems
- Computer Graphics and Visualization Techniques
- Advanced Data Compression Techniques
- Optics and Image Analysis
- Infrared Target Detection Methodologies
- Semiconductor materials and devices
Shandong University
2023
Peking University
2006-2010
Georgia Institute of Technology
2009
Conservatoire National des Arts et Métiers
1996-2002
Centre de Gestion Scientifique
1998
University of Minnesota
1997
We have developed a one-step method to fabricate large-scale polymer nanowire (PNW) arrays of any organic materials, with good control over the density and length. The PNWs are formed by ion etching film that is covered thin layer metal nanoparticles, which serves as "mask" for creating surface roughness required PNWs. Our study demonstrates an effective approach functional NW applications in sensors, electronics, biomaterials, energy materials.
A new system, consisting of a double-channel Fabry–Perot etalon and laser diodes emitting around 780 nm, is described proposed for use measuring air-refractive index. The principle this refractometer based on frequency measurements between optical sources. It permits quasi-instantaneous measurement with resolution better than 10-9 uncertainty in the 10-8 range. Some preliminary results stability system refractive index air apparatus are presented. first at nm are, within an experimental...
We describe a new simple, compact refractometer for air refractive index measurements. It consists of double plane–plane Fabry Perot interferometer. Both interferometers consisting Zerodur spacers thickness 1 and 100 mm are illuminated independently by the same single mode laser diode. The shorter cavity allows unambiguous identification transmission peak longer one to which frequency is servo-locked. obtained via heterodyne comparison with second locked hyperfine component rubidium D2 line....
We report on the growth and fabrication of deep ultraviolet (DUV) light emitting diodes (LEDs) an AlN template which was grown a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities in layer are greatly decreased with introduction this The crystalline quality AlGaN epilayer is further improved by using low-temperature GaN interlayer between AlN. Electroluminescences different DUV-LED devices at wavelength 262 317 nm demonstrated. To improve hole concentration p-type...
Optoelectronic integrated circuits (OEICs) have enhanced integration and communication capabilities in various applications. With the continued increase complexity scale, need for an accurate efficient simulation environment compatible with photonics electronics becomes paramount. This paper introduces a method using Verilog-A hardware language electronic design automation (EDA) platform to create equivalent circuit compact models photonic devices, considering their dispersion, polarization,...
In this paper, we report a combined spin-stand measurement and micromagnetic simulation study on narrow track recording characteristics in thin film media. It is found that the onset density of nonlinear partial erasure determined by intertransition percolations near edges where head field gradient poor. Trimming into shared pole merged MR/thin heads necessary for performance at both high linear densities. Increasing magnitude with respect to medium coercivity increases width erase band but...
We report on the growth and fabrication of nonpolar a-plane light emitting diodes with an in-situ SiNx interlayer grown between undoped GaN buffer Si-doped layer. X-ray diffraction shows that crystalline quality layer is greatly improved introduction interlayer. The electrical properties are also improved. For example, electron mobility sheet resistance reduced from high to 31.6 cm2/(V·s) 460 Ω/□ respectively. Owing significant effect interlayer, LEDs realized. Electroluminescence a...
A new system, constituted of a double channel Fabry Perot etalon and laser diodes, is described proposed to be used for air refractive index measurements. The principle this refractometer based only on frequencies It permits instantaneous measurements with relative standard deviation in the range 10<SUP>-9</SUP>. Some preliminary results stability systems are presented.
Abstract Two GaN samples, with and without high temperature (HT)‐AlN interlayer (labelled as sample A B, respectively) grown by MOCVD on AlN template, were investigated double‐crystal X‐ray diffraction (DC‐XRD), photoluminescence (PL), atomic force microscope (AFM) measurements. It was found that the crystal quality of could be greatly improved HT‐AlN interlayer. The full width at half maximum (FWHM) (102) reflection in XRD rocking curve narrower for than B. However, FWHMs (002) reflections...
Blooming is a normal phenomenon in the measurement of low light level television (LLL TV) due to its inner auto-gain control, which will influence test result and should be controlled process. Analyzing blooming principle, solving method was improved by increasing ambient illumination on sense LLL TV, decrease value TV. What's more, this validated an experiment resolution TV applying auxiliary lighting equipment. The equipment composed with three ground glasses, twelve LED lamps, box brushed...
As the complexity of optoelectronic integrated circuits (OEICs) develop, need for an accurate and efficient compatible simulation environment that supports both photonics electronics becomes increasingly critical. This paper addresses demand by proposing approach leverages Verilog-A language to build equivalent circuit models compact photonic devices. Passive components, including couplers waveguides, are modeled using models. Active such as CW lasers, realized through adoption Additionally,...
Abstract In the PDF file of paper by Y. B. Tao et al. [Phys. Status Solidi C 6 , S317 (2009)], published online 7 May 2009, a wrong image was loaded: in place Fig. 2, inadvertently 1 shown again. This Erratum displays Figs. and 2 properly. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
A new system, consisting of a double channel Fabry Perot etalon and laser diodes emitting around 780 nm is described proposed to be used for air refractive index measurements. The principle this refractometer based on frequency measurements between optical sources. It permits quasi-instantaneous measurement with resolution better than uncertainty in the range. Some preliminary results stability system apparatus are presented. first at are, within an experimental order of, agreement predicted...
R-C(Ritchey-Chretien)光学系统作为两镜反射式光学系统,是双曲面光学系统的典型结构形式,在现代光学工程中具有重要的应用。以缩短高精度系统装调周期和指导高精度系统批量生产为目的,用某一机载星敏感器所应用的R-C光学系统为例,在确定以主镜为装调基准的前提下,针对直径较小的次镜,设计了一种次镜装调机构,实现次镜6个自由度调整,并对装调、固化过程中涉及的方法进行了说明。通过对装调前后以及环境试验后的系统像质进行测试,验证了设计机构的稳定性。测试结果表明:该次镜装调机构能够满足系统像质要求,整机波像差PV值优于(1/2)<i>λ</i>,RMS值优于(1/15)<i>λ</i>,装调方法达到可指导高精度系统批量生产的目的。
微光像增强器是夜视领域重要的光电探测和成像器件，它在头戴显示、手持观测和夜间瞄准等方面应用广泛。带有光纤倒像器的超二代倒像式微光像增强器在夜间瞄准系统中应用较为广泛，根据实际应用需求情况，分析倒像式微光像增强器像固有误差中翻转角误差和蛇形畸变对应用中瞄准、行程差测量误差的影响。通过分析说明，像翻转角误差小于30'，蛇形畸变小于30 μm时能够满足中近程瞄准和行程差测量的需求，并研制了检测装置对其误差进行质量控制，解决该问题的同时对该类应用的像增强器生产制造提出了相关质控点。
The paper summarizes the activities and research projects in progress laser, wavelength length group of BNM-INM, one French National Laboratories for Primary Metrology. They range from search new optical clocks to transfer air-wavelength references calibration centers.
光电校靶采用捷联惯导系统，需将惯导轴线用光电自准直系统表征捷联，用于对设备轴线的测量。光电自准直系统所表征的轴线与惯导轴线的一致性是影响校靶精度的重要因素，为提高光电校靶系统测量精度和效率，提出了一种惯导轴线的光电表征和校准方法。该方法是在分析测量结果偏差与一致性关系的基础上，采用实验数据拟合的方式得到自准直系统光轴与惯导轴之间的角度偏差值，用于系统修正，从而实现高精度校准。通过试验，将传统光机校正法和光电校准法结合使用，可大幅度提高系统校正效率，同时得到惯导与光轴一致性精度在15″以内。试验结果表明，与传统光学平晶引出的光机校正法相比，该方法的表征准确度和校准精度更高，适用于高精度惯性测量系统。
L'une des principales sources d'incertitudes limitant la précision mesures dimensionnelles dans l'air par méthode interférométrique est liée à l'incertitude de mesure l'indice réfraction et celle ses fluctuations.A ce jour les meilleurs réfractomètres n'atteignent que incertitudes l'échelle 10~7, leurs temps réponse relativement grands ne permettent pas d'effectuer en réel.Dans cet article, nous présentons le principe d'un nouveau type réfractomètre, développement l'INM, pour réel avec une...