Fabrication of a high-temperature deep-ultraviolet photodetector working in the solar-blind spectrum range (190-280 nm) is challenge due to degradation dark current and photoresponse properties. Herein, β-Ga2O3 multi-layered nanobelts with (l00) facet-oriented were synthesized, demonstrated for first time possess excellent mechanical, electrical properties stability at high temperature inside TEM studies. As-fabricated DUV photodetectors using enhanced photodetective performances, that is,...

Electrochemical-coupling layer-by-layer (ECC-LbL) assembly is introduced as a novel fabrication methodology for preparing layered thin films. This method allows us to covalently immobilize functional units (e.g., porphyrin, fullerene, and fluorene) into films having desired thicknesses designable sequences both homo- heteroassemblies while ensuring efficient layer-to-layer electronic interactions. Films were prepared using conventional electrochemical setup by simple inexpensive process from...

A new UV‐A photodetector based on K 2 Nb 8 O 21 nanowire is successfully fabricated for the first time. The potassium niobate synthesized using a facile molten method. photodetectors exhibit an excellent sensitivity and wavelength selectivity with respect to light. Furthermore, show great advantages in response time compared other sensors single‐oxide semiconductor nanostructures, and, especially, responsivity much better than that of single ZnS nanobelt photodetectors. mechanism...

With the increasing power density and reduced size of GaN-based electronic converters, heat dissipation in devices becomes key issue toward real applications. Diamond, with highest thermal conductivity among all natural materials, is interest for integration GaN to dissipate generated from channel AlGaN/GaN high electron mobility transistors (HEMTs). Current techniques involve three strategies fabricate GaN-on-diamond wafers: bonding diamond, epitaxial growth diamond on GaN, diamond. As a...

The wide bandgap of diamond, along with its extreme semiconductor properties, offers the promising route for deep-ultraviolet (DUV) detection, especially under solar-blind condition and harsh environments. ideal photodetector should generally satisfy 5S requirements such as high sensitivity , signal-to-noise ratio spectral selectivity speed stability . In this paper, we comprehensively investigate DUV detectors fabricated from various kinds single crystal diamonds boron-doped diamond...

The enhanced UV-visible light TiO₂/Si photodetectors were prepared by doping In or N in TiO₂ nanorod arrays. These devices have obvious advantages the applications of portable and wearable due to small driving voltages relatively large photocurrents.

A multicolor photodetector based on the heterojunction of n‐Si(111)/TiO 2 nanorod arrays responding to both ultraviolet (UV) and visible light is developed by utilizing interface engineering. The fabricated via a consecutive process including chemical etching, magnetron sputtering, hydrothermal growth, assembling. Under small reverse bias (from 0 ≈−2 V), only photogenerated electrons in TiO are possible tunnel through low barrier Δ E C , device responses UV light; as increases, holes Si also...

Abstract 2D electron and hole gases (2DEG or 2DHG) based on semiconductor surface/interface materials are promising for next‐generation integrated circuits high‐frequency ‐power electronics. To reduce power consumption, normally off operation low‐switching‐loss metal‐oxide field‐effect transistors (MOSFETs) 2DEG 2DHG highly in demand. The present methods to achieve MOSFETs have various shortcomings such as reduction carrier mobility, sacrifice of drain current, high uncertainty threshold...

We fabricate heterojunctions consisting of a single n-type ZnO nanowire and p-type GaN film. The photovoltaic effect exhibits open-circuit voltages ranging from 2 to 2.7 V, maximum output power reaching 80 nW. Light-emitting diodes with UV electroluminescence based on the are demonstrated.

A super-thin AlN layer is inserted between the intrinsic InGaN and p-InGaN in solar cell structure to improve photovoltaic property. The dark current markedly decreased by more than two orders of magnitude short-circuit density increased from 0.77 mA/cm2 1.25 mA/cm2, leading a doubled conversion efficiency compared conventional structure. Electrical transport analysis reveals that forward electrical property greatly improved range open circuit voltage leakage mechanism changes defect related...

A thermally stable metal-insulator-semiconductor (MIS) Schottky-type photodiode with high performance based on the InGaN film is demonstrated at temperatures up to 523 K. The reverse leakage current remains a low level (10−7−10−8 A), while UV responsivity as 5.6 A/W −3 V under K, without observing persistent photoconductivity. discrimination ratio between ultraviolet (378 nm) and visible light (600 maintained be more than 105. temperature-dependent current-voltage characteristics of MIS...

Electrical characteristics of leakage current paths in vertical-type n-GaN Schottky barrier diodes (SBDs) on free-standing GaN substrates are investigated by using photon emission microscopy (PEM). The PEM mapping shows that the initial failure SBD devices at low voltages is due to from polygonal pits epilayers. It observed these originate carbon impurity accumulation dislocations with a screw-type component microstructure analysis. For without pits, no and first appeals edge electrodes as...

Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Liwen Sang, Meiyong Liao, Yasuo Koide, Masatomo Sumiya; High-performance metal-semiconductor-metal InGaN photodetectors using CaF2 as the insulator. Appl. Phys. Lett. 7 March 2011; 98 (10): 103502. https://doi.org/10.1063/1.3562326 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley...

The authors report on the direct integration of high-dielectric constant (high-k) Ta2O5 films p-type single crystal diamond for high-power electronic devices. Crystallized hexagonal phase δ-Ta2O5 film is achieved by annealing amorphous deposited a sputter-deposition technique. electrical properties thin are investigated fabricating metal-insulator-semiconductor (MIS) diodes. leakage current MIS diode as low 10−8 A/cm2 as-deposited and 10−2 crystallized film, which 108 102 times lower than...

The wide bandgap of diamond, along with its extreme semiconductor properties, offers the promising route for deep-ultraviolet (DUV) detection, especially under solar-blind condition and harsh environments. ideal photodetector should generally satisfy 5S requirements such as high sensitivity, signal-to-noise ratio, spectral selectivity, speed, stability. In this paper, we comprehensively investigate DUV detectors fabricated from various kinds single crystal diamonds boron-doped diamond...

Abstract The typical photodetectors can only detect one specific optical spectral band, such as InGaAs and graphene-PbS quantum dots for near-infrared (NIR) light detection, CdS Si visible detection ZnO III-nitrides UV detection. So far, none of the developed photodetector achieve multicolor with arbitrary selectivity, high sensitivity, speed, signal-to-noise ratio, stability simplicity (called 6S requirements). Here, we propose a universal strategy to develop selectivity by integrating...

Multiple stacked InGaN/GaN quantum dots are embedded into an InGaN p-n junction to develop multilevel intermediateband (MIB) solar cells. An IB transition is evidenced from both experiment and theoretical calculations. The MIB cell shows a wide photovoltaic response the UV near-IR region. This work opens up interesting opportunity for high-efficiency cells in photovoltaics field. As service our authors readers, this journal provides supporting information supplied by authors. Such materials...

Abstract The concept of p -channel InGaN/GaN heterostructure field effect transistor (FET) using a two-dimensional hole gas (2DHG) induced by polarization is demonstrated. existence 2DHG near the lower interface verified theoretical simulation and capacitance-voltage profiling. metal-oxide-semiconductor FET (MOSFET) with Al 2 O 3 gate dielectric shows drain-source current density 0.51 mA/mm at voltage −2 V drain bias −15 V, an ON/OFF ratio two orders magnitude effective mobility 10 cm /Vs...

Vertical Schottky barrier diodes (SBDs) were fabricated from the metal–organic chemical vapor deposition (MOCVD)-grown GaN epitaxial layer on free-standing substrates. It was found that quality of drift layers and SBD properties strongly dependent growth rates. The step-flow surface morphology, near-unity ideality factor (n ∼ 1.04), high height (∼0.97 eV) achieved at a relatively low rate 2.61 µm/h. An extremely turn-on voltage (0.73 V), together with on-resistance 0.72 mΩ·cm2, obtained.

Abstract All‐electrical nano‐electromechanical or micro‐electromechanical systems (NEMS/MEMS) with integrated sensing and actuation are essential to fulfill the functionalities of single‐crystal diamond (SCD) NEMS/MEMS by circuits for sensors quantum systems. However, implementation all‐electrical on‐chip SCD transducers has encountered bottlenecks due lack shallow dopants in difficulty integrating active materials on diamond. In present work, an unprecedented figure‐of‐merits is...

A conventional wisdom is that the sensing properties of magnetic sensors at high temperatures will be degraded due to materials' deterioration. Here, concept high-temperature enhancing proposed based on hybrid structure SCD MEMS resonator functionalized with a thermal-stable ferromagnetic galfenol (FeGa) film. The delta E effect magnetostrictive FeGa thin film Ti/SCD cantilevers investigated by varying operating temperature from 300 773 K upon external fields. multilayer sensor presents...