A5021248080- Quantum and electron transport phenomena
- ZnO doping and properties
- Ga2O3 and related materials
- Physics of Superconductivity and Magnetism
- Magnetic properties of thin films
- Advanced Photocatalysis Techniques
- Gas Sensing Nanomaterials and Sensors
- Organic Electronics and Photovoltaics
- Magnetic Properties of Alloys
- Metallurgical and Alloy Processes
- Conducting polymers and applications
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Sensor and Energy Harvesting Materials
- Organic Light-Emitting Diodes Research
- Nanowire Synthesis and Applications
- Analytical Chemistry and Sensors
- Electronic and Structural Properties of Oxides
- Heusler alloys: electronic and magnetic properties
Osaka Metropolitan University
2023-2024
Japan Advanced Institute of Science and Technology
2017-2021
University of Rajshahi
2013-2019
The atmospheric pressure plasma-assisted chemical vapor deposition technique has successfully demonstrated unintentionally doped (UID) Ga2O3 growth at 350 °C. This allows independent and homogeneous multiple nuclei of Ga2O3, leading to three-dimensional grain a rate ⁓0.17 μm/h. In the study Schottky barrier diodes, Schottky-like current (I)–voltage (V) response shows typical behavior on Ga2O3. is good sign an early stage device development grown sample. extracted height ⁓2.20 eV was higher,...
Influence of annealing temperature and thickness on the optical characteristics blend poly (3-hexylthiophene) (P3HT) Phenyl C61 butyric acid methylester (PCBM) layer has been investigated in this report.Photoactive polymer material (P3HT:PCBM) was deposited indium tin oxide (ITO) substrate by spin-coating.The morphology P3HT:PCBM composite Atomic Force Microscope (AFM).The surface roughness found to reduce after heat treatment.The absorption increase with its number (thickness).On other...
Low-temperature homoepitaxial growth of β-Ga2O3(-201) has been successfully demonstrated by the atmospheric pressure plasma-enhanced chemical vapor deposition technique. To search for low-temperature growth, temperature-dependent studies were carried out between 350 and 600 °C. A high N2 gas flow rate, low gallium source concentration, oxygen rate ratio played key roles in growing independent homogeneous multiple nuclei Ga2O3, leading to three-dimensional grain mode, single crystallinity,...
The hybrid structure of ZnO NWs with the presence different dopants recently has drawn many interests from researchers due to possibility integrate multiple functionalities into one single structure. In this article, we investigated morphology, crystal and ferromagnetism ZnO@Co/Ni core@shell prepared by a facile electrochemical deposition method. results show that thin layer Ni Co coated on surface (confirmed XRD, EDS, TEM Raman scattering) can create significant improvement ferromagnetic...
We successfully confirmed spin injection and detection in the MnAs/GaAs/InAs hybrid system on GaAs(111)B through lateral nonlocal valve (NLSV) measurement at 1.5 K 77 K. Surprisingly, we found larger NLSV signals than that This seems to be interesting behavior compared typical temperature dependent study. studied depth extract parameters such as diffusion length efficiency system. ∼10 µm ∼7 K, respectively, also ∼1.6% ∼2.5% respectively. The reason behind higher comes from better impedance...
Impregnation of pores porous silicon (PS) by Lanthanum Fluoride (LaF3) using a novel one-step chemical bath technique, and application the LaF3-impregnated structure (LaF3/PS) as potentiometric fluoride ion sensor have been investigated in this article. The impregnation LaF3 inside was achieved technique developed group. Scanning Electron Microscopy (SEM) EDX on cross-section LaF3/PS/Si confirmed film deposition PS. heterostructure (F - ) aqueous medium. high specific area PS taken key...