A5082604653- Thin-Film Transistor Technologies
- CCD and CMOS Imaging Sensors
- Transition Metal Oxide Nanomaterials
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and devices
- Photonic Crystals and Applications
- Photonic and Optical Devices
- Advanced Memory and Neural Computing
- Organic Light-Emitting Diodes Research
- Liquid Crystal Research Advancements
- ZnO doping and properties
- Organic Electronics and Photovoltaics
- Advanced Optical Imaging Technologies
- Color Science and Applications
- Silicon and Solar Cell Technologies
- Image and Video Quality Assessment
- Electrowetting and Microfluidic Technologies
- Electrical and Thermal Properties of Materials
- Advanced Sensor and Energy Harvesting Materials
- Semiconductor Lasers and Optical Devices
- Advanced Neural Network Applications
Semiconductor Energy Laboratory (Japan)
2013-2024
Abstract We prototyped a 6.0‐in. color sequential XGA LCD using an oxide semiconductor. A has lower power consumption than filter because light use efficiency is better. utilize the low I off of semiconductor and make frame rate lower, which leads to drivers. The can have monochrome electronic paper function with white backlight on.
Using a WTC OLED device and backplane using CAAC‐OS FETs over glass substrate employing the 1.5 µm rule, we fabricated 2.78‐in 1058‐ppi display, pixel density of which is highest in world among displays thin film transistors substrate.
A prototype of an 8.34 inch, 1058 ppi 8K4K display is fabricated. This shall use top-gate self-aligned-type crystalline oxide semiconductor field-effect transistors as the backplane, and will be smallest 8K in world.
We fabricated a 1.50‐inch, 3207‐ppi OLED display with drivers capable of 32‐division driving, which is achieved by monolithically stacking OSFETs over SiFETs. Taking advantages minute high withstand voltage, Si‐OS connection regions were provided in subpixels to connect Si and OS pixel arrays at given positions.
Endpoint artificial intelligence (Al) requires high flexibility in Al processes under strict cost and power limitations. This work aims to achieve a chip capable of executing at low while periodically switching the context multiple neural networks (NNs) small area. Transistors fabricated using crystalline oxide semiconductor (OS) such as indium-gallium-zinc exhibit an extremely offstate current. Such transistors have compatibility with Si CMOS OS transistor layers can be stacked [1]. A...
Abstract In this study, white organic EL devices with microcavity structures were developed. A flexible high‐resolution AMOLED display low power consumption using RGBW sub‐pixels formed by a color filter method was fabricated. addition, side‐roll and top‐roll panels bezels that are not viewable from the front also developed display.
We focused on the off-state current ( I off ) of oxide semiconductor thin film transistors (TFT) (In–Ga–Zn-oxide TFTs), which is lower than that amorphous silicon TFTs and successfully made a prototype 6.0-in. extended graphics array (XGA) reflective liquid crystal display (RLCD) panel integrally including data selection demultiplexer scan driver capable displaying still images at 1/180 fps. When are displayed, frame frequency can be set low. This means rewrites image markedly reduced. leads...
Abstract We fabricated new 2.78‐in 1058‐ppi organic light‐emitting diode (OLED) displays. The displays used OLED devices with a tandem structure and single field effect transistor (FET) using c‐axis aligned crystalline In–Ga–Zn–O (CAAC‐IGZO) for an active layer employing the 1.5‐µm rule over glass substrate. Even in such high resolution exceeding 1000 ppi, crosstalk that was observed lower luminance region suppressed. achieved color reproducibility reduced viewing angle dependence.
In this paper, we fabricate a 1.50‐inch, 3207‐ppi prototype OLED display with drivers capable of 32‐division driving, which is achieved by monolithically stacking CAAC‐OS FETs over SiFETs. This structure enables narrow bezel and two‐dimensional driver arrangement, leading to independent driving 32 pixel arrays divided source gate lines.
We devised a threshold voltage compensation pixel circuit using back‐gate bias voltage. Variations in can be reduced to 10% while improving the saturation characteristics of driving transistor. fabricated 5.29‐in Quad‐VGA OLED display this circuit.
Abstract By using oxide semiconductors, we succeeded in prototyping a 3.4‐inch QHD LCD panel whose aperture ratio is high and pixels do not include storage capacitor. The increased from 40 % to 59%, resulting reduction of power consumption backlight unit.
In this study, white organic electroluminescent devices with microcavity structures were developed. A flexible high-resolution active-matrix light-emitting diode display low power consumption using red, green, blue, and sub-pixels formed by a color-filter method was fabricated. addition, side-roll touch developed in combination capacitive screen.
We have fabricated a 5.5-inch 4K2K liquid crystal display (LCD) using an oxide semiconductor. The use of semiconductor layer high-mobility indium-rich material and top-gate structure enables fabrication LCD with narrow bezel integrated demultiplexer.
This study aims to focus on a cover film with considerably low Young's modulus achieve robust and flexible displays. We fabricated prototype display such its surface achieved robustness bendability, which can be used in various applications.
We focused on the off-state current (Ioff) of oxide semiconductor thin film transistors (TFT) (In–Ga–Zn-oxide TFTs), which is lower than that amorphous silicon TFTs and successfully made a prototype 6.0-in. extended graphics array (XGA) reflective liquid crystal display (RLCD) panel integrally including data selection demultiplexer scan driver capable displaying still images at 1/180 fps. When are displayed, frame frequency can be set low. This means rewrites image markedly reduced. leads to...
We have successfully fabricated an 8.34‐inch 1058‐ppi 8K x 4K flexible organic light‐emitting diode (OLED) display. It exhibits the world’s highest resolution and pixel density among OLED displays, offering excellent viewing‐angle characteristics owing to arrangement of subpixels in a zigzag pattern.
Abstract An ultra‐high resolution 513‐ppi liquid crystal display with a narrow 1‐mm bezel and an aperture ratio greater than 50% was fabricated. A highly reliable channel‐etched c‐axis aligned crystalline oxide semiconductor (CAAC‐OS) used in backplane.
We developed a high-mobility oxide semiconductor material and made 5.46″ prototype of 806-ppi 4K2K liquid crystal display using CAAC-OS FET that has top-gate structure. The structure caused the parasitic capacitance to be small, resulting in bezel width 0.675 mm.
A prototype of an external compensating circuit including integrator is fabricated for organic light‐emitting diode display. This includes amplifier with two differential pairs to improve the accuracy measuring current compensation variations in transistor characteristics.
We have established a technique for changing part of an active layer oxide semiconductor (OS) to transparent electrode in order achieve aperture ratio 50% or higher and bezel width 1 mm fringe field switching (FFS) mode LCD panel with high resolution 513 ppi. Furthermore, we prototyped by examining driving that enables low-frequency driving.
We devised a threshold voltage compensation pixel circuit using back-gate bias voltage. Variation in voltages can be reduced to 10% simulation while improving the saturation characteristics of driving transistor. The compensate not only variation but also mobility variation. fabricated 5.29-in Quad-VGA organic light emitting diode display this circuit.
Abstract We have prototyped a 3.0‐in. VGA OLED panel containing low‐temperature single‐crystal silicon (LTSS) TFTs on glass substrate and having six terminals for connection to external circuitry. The good ON characteristics of LTSS allows the use serial video signal, reducing number signals from