A5075109149- 3D IC and TSV technologies
- Metamaterials and Metasurfaces Applications
- Advanced Antenna and Metasurface Technologies
- Plasmonic and Surface Plasmon Research
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Photonic and Optical Devices
- Electronic Packaging and Soldering Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Microwave Engineering and Waveguides
- Gyrotron and Vacuum Electronics Research
Ningbo University
2023
Fujian Normal University
2016-2017
Nanya Technology (Taiwan)
2012
This letter introduces a new <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">K-/Ka</i> -band diplexer-integrated simplified rotary joint. The stator and rotor are arranged to construct guided-wave structure based on gap waveguide (GW) technology, which supports stable rotation without leakage. A bandpass filter (lower band channel) two-path high-pass (upper designed the form diplexer enable wideband dual-band operation. coaxial probe-based...
As device scaling becomes increasingly difficult, 3D integration with through silicon via (TSV) has emerged as a viable solution for addressing the requisite bandwidth and power efficiency challenges. However, mechanical stresses induced by TSVs must be controlled in flow order to preserve electrical integrity of front-end devices. Since copper filling material TSV could causes on near TSV, impact proximity CMOS evaluated at various operation temperatures. In this paper, Cu-filled were...
We proposed a humidity sensor based on perfect metamaterial absorber. The is composed of three layers, which are metallic particle array the top, porous silicon in middle layer and film at bottom. It shown that resonant wavelength displays significant red-shift with increasing effective permittivity silicon, influenced by filling fraction water condensation. Furthermore, simulation results indicate refractive index sensitivity absorber high to 249 nm/RIU, makes our structure be an ideal...
This study is to numerically and experimentally investigate the effect of via-middle Cu through silicon via (TSV) on mobility change (or related saturated current change, or drive change) transistors in DRAM chip for 3D integration further determine keep-out zone (KOZ) terms key parameters such as SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layer effect, zero-stress temperature, single array vias, blind well diameter pitch vias....