A5041567884- Silicon Carbide Semiconductor Technologies
- HVDC Systems and Fault Protection
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Thermal Analysis in Power Transmission
- Wind Energy Research and Development
- Physics of Superconductivity and Magnetism
- Induction Heating and Inverter Technology
- Multilevel Inverters and Converters
- Mechanical Failure Analysis and Simulation
- Engineering Applied Research
- Wind Turbine Control Systems
- Superconductivity in MgB2 and Alloys
- Advanced Sensor Technologies Research
- Iterative Learning Control Systems
- Thermal properties of materials
- Engineering Diagnostics and Reliability
Tsinghua University
2023-2025
Jilin Electric Power Research Institute (China)
2023
Taiwan Power (Taiwan)
2013
The high-voltage reverse blocking integrated gate commutated thyristor (RB-IGCT) is a suitable power semiconductor device for hybrid line-commutated converters (HCC) to effectively reduce the risk of commutation failure. In HCC, RB-IGCT required protect itself from over-voltage destruction under some fault working conditions, but protection strategy RB-IGCTs has not been proposed yet. this article, an system designed and realized by driver based on analysis conditions. function verified...
In H-LCC applications, RB-IGCT needs to operate reliably after continuous switching cycles. The primary challenge is ensuring that the junction temperature of device remains within safe limits during and these Accurate yet simple estimation fluctuations crucial for safety. This paper proposed a Foster thermal resistance capacitor network model based on simplified power consumption function. model's accuracy was verified using Temperature Sensitive Electrical Parameter method. Results...
Abstract With the enormous growth in capacity of electrical equipment, power semi‐conductor devices are developing rapidly towards larger size and higher capacity. To suppress thermal resistance achieve efficient heat dissipation, authors focus on a low‐temperature sintering technique for wafer‐level high‐power devices. In detail, 6‐inch whole‐wafer device was successfully fabricated by Si chip Mo plate using pulsed laser deposition (PLD)‐based nano‐Ag layer at temperature 250°C, revealing...
The d <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">v</i> /d xmlns:xlink="http://www.w3.org/1999/xlink">t</i> induced turn-on is an undesirable triggering event of integrated gate-commutated thyristor (IGCT). In this letter, we aim to improve the immunity IGCT in hybrid line commutated converter (H-LCC), which a newly proposed topology that can reduce commutation failure probability. Firstly, mechanism revealed. Secondly, it proved...
The large-size and high-voltage reverse blocking integrated gate-commutated thyristor (RB-IGCT) is available for the hybrid line-commutated converter topology to effectively reduce commutation failure probability. However, an abnormal turn <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-on</small> phenomenon observed in fabricated 8-kV RB-IGCT samples, which potentially hinders normal current switching has not been investigated yet. In this...
The paper uses PSS/E software to study connecting an offshore wind farm with 864 MW into the 2015 Taiwan power system.Major simulation works include: steady-state flow, fault current computation, transient stability analysis and impact on critical clearing time.Three connection methods, i.e., single-point, separatepoint multi-point connection, are proposed, in which single-point is divided two voltage levels (161kV 345kV).During operation, results indicate that 345 kV method demonstrates...
This paper investigates the dv/dt induced turn-on mechanism and optimization solution in reverse blocking integrated gate commutated thyristor (RB-IGCT) when its driver is not powered on. Firstly, we decipher critical process analyze effect of time on capability. Then, based systematic analysis, diode resistor branches connected to cathode are proposed enhance capability, resistance value adjusted compromise capability trigger characteristics device. Finally, impact applied has been verified...