A5059103160- Magnetic properties of thin films
- Plasma Diagnostics and Applications
- Graphene research and applications
- Topological Materials and Phenomena
- Metallic Glasses and Amorphous Alloys
- Semiconductor materials and devices
- 3D IC and TSV technologies
- Physics of Superconductivity and Magnetism
- Nanoporous metals and alloys
- Advanced MEMS and NEMS Technologies
- Advanced Surface Polishing Techniques
- Magnetic Properties and Applications
- Advanced Condensed Matter Physics
- Aluminum Alloys Composites Properties
- Rare-earth and actinide compounds
East China Normal University
2023-2024
Spin–orbit torque (SOT) in the heavy elements with a large spin–orbit coupling (SOC) has been frequently used to manipulate magnetic states spintronic devices. Recent theoretical works have predicted that surface oxidized light negligible SOC can yield sizable orbit (OT), which plays an important role switching magnetization. Here, we report anomalous-Hall-resistance and harmonic-Hall-voltage measurements on perpendicularly magnetized Ta/Cu/[Ni/Co]5/Cu-CuOx multilayers. Both efficiency...
Spin-orbit torque (SOT) in the heavy elements with a large spin-orbit coupling (SOC) has been frequently used to manipulate magnetic states spintronic devices. Recent theoretical works have predicted that surface oxidized light negligible SOC can yield sizable orbital (OT), which plays an important role switching magnetization. Here, we report anomalous-Hall-resistance and harmonic-Hall-voltage measurements on perpendicularly magnetized Ta/Cu/[Ni/Co]$_5$/Cu-CuO$_x$ multilayers. Both...
The $RE$Al(Si,Ge) ($RE$ = rare earth) family, known to break both the inversion- and time-reversal symmetries, represents one of most suitable platforms for investigating interplay between correlated-electron phenomena topologically nontrivial bands. Here, we report on systematic magnetic, transport, muon-spin rotation relaxation ($\mu$SR) measurements (Nd,Sm)AlGe single crystals, which exhibit antiferromagnetic (AFM) transitions at $T_\mathrm{N} 6.1$ 5.9 K, respectively. In addition, NdAlGe...
Abstract The REAl(Si,Ge) (RE = rare earth) family, known to break both the inversion- and time-reversal symmetries, represents one of most suitable platforms for investigating interplay between correlated-electron phenomena topologically nontrivial bands. Here, we report on systematic magnetic, transport, muon-spin rotation relaxation (uSR) measurements (Nd,Sm)AlGe single crystals, which exhibit antiferromagnetic (AFM) transitions at T N 6.1 5.9 K, respectively. In addition, NdAlGe undergoes...
A series of ${\mathrm{Fe}}_{x}{\mathrm{Rh}}_{100\ensuremath{-}x}$ ($30\ensuremath{\le}x\ensuremath{\le}57$) films were epitaxially grown using magnetron sputtering, and systematically studied by magnetization, electrical resistivity, Hall resistivity measurements. After optimizing the growth conditions, phase-pure obtained, their magnetic phase diagram was revisited. The ferromagnetic (FM) to antiferromagnetic (AFM) transition is limited at narrow Fe contents with...