A5113195545- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- Astrophysics and Cosmic Phenomena
- Advanced Semiconductor Detectors and Materials
- ZnO doping and properties
- Social Media in Health Education
- Ga2O3 and related materials
- Gamma-ray bursts and supernovae
- Semiconductor Lasers and Optical Devices
- Dark Matter and Cosmic Phenomena
- Ion-surface interactions and analysis
- Misinformation and Its Impacts
- stochastic dynamics and bifurcation
- Metal and Thin Film Mechanics
- Health Literacy and Information Accessibility
- Phytochemistry and biological activity of medicinal plants
- Advanced Optical Sensing Technologies
- Machine Fault Diagnosis Techniques
- Electrochemical sensors and biosensors
- Probabilistic and Robust Engineering Design
- Advanced Nanomaterials in Catalysis
- Manufacturing Process and Optimization
- Acupuncture Treatment Research Studies
- Geophysics and Gravity Measurements
- Analytical Chemistry and Sensors
Kaifeng University
2025
Guangdong Pharmaceutical University
2025
University of Shanghai for Science and Technology
2025
Chinese Academy of Sciences
2020-2024
Shanghai Tenth People's Hospital
2024
Guangzhou University of Chinese Medicine
2024
China Electronics Technology Group Corporation
2024
University of Science and Technology of China
2024
Institute of High Energy Physics
2020-2023
Gansu Great Wall Electrical and Electronics Engineering Research Institute
2023
InGaN/GaN light-emitting diodes (LEDs) with graded-thickness quantum barriers (GTQB) are designed and grown by metal-organic chemical-vapor deposition. The proposed GTQB structure, in which the barrier thickness decreases from n-GaN to p-GaN side, was found lead an improved uniformity hole distribution thus, radiative recombination rates across active region. Consequently, efficiency droop reduced 28.4% at a current density of 70 A/cm2, is much smaller than that conventional equal-thickness...
Previous ad auctions predominantly relied on rule-based mechanisms, which selected winning advertisements (ads) at the ad-level and subsequently combined them into page views (PVs), leading to suboptimal allocations in multi-round auctions. This limitation stems from significant computational burden required design ranking score rules select sets, as well inability fully capture contextual information within PVs during selection. In this paper, we propose a key-performance-indicator (KPI)...
InSbN alloys are fabricated by two-step nitrogen ion implantation into InSb (111) wafers. X-ray photoelectron spectroscopy indicates that most of the implanted ions substitute Sb to form In–N bonds. The percentage bonds is found decrease with increase in nitrogen. Such can effectively detect long wavelength infrared radiation and absorption peak energies be controlled monitoring dose. measured wavelengths consistent band gaps calculated using a ten-band k⋅p model.
We report observation of transverse electric (TE) dominant intersubband absorption in Si-doped GaInAsN∕GaAs multiple-quantum-well structures. The TE is believed to be caused by the incorporation nitrogen and associated state. When confinement strong narrow quantum wells, ground state pushed up, which enhances interaction with significantly changes nature
Tumor immunotherapy is an innovative treatment today, but there are limited data on the quality of information social networks. Dissemination misinformation through internet a major issue.
We report on a study of In2O3 thin films obtained by post-growth thermal oxidation InN(0001) using rapid annealing (RTA) and cycle-RTA (CRTA). The crystal qualities both the resultant remaining InN were significantly improved CRTA instead RTA. Body-center cubic (bcc) In2O3, consisting two In2O3(111) variants in-plane rotated 60° with respect to each other, was epitaxially grown InN(0001). orientations determined as In2O3[01]//InN[110] In2O3[01]//InN[20] for variants. Microscopic...
A GaInNAs∕AlAs∕AlGaAs double-barrier quantum well infrared photodetector was grown by molecular beam epitaxy and fabricated standard device processes. The growth structure of the as-grown sample verified x-ray diffraction measurement. photoluminescence emission peak, which is related to interband transition in GaInNAs well, observed at ∼1.2eV. After annealing 650°C, a large blueshift 40meV observed. photocurrent peak 1.24μm associated with intersubband transitions conduction band well....
We have epitaxially grown InN thin films on c- and r-plane sapphire substrates by metal–organic chemical vapor deposition (MOCVD) using GaN buffer. Their structural optical comparisons revealed the high quality of a-plane InN/GaN heterostructure sapphire. Remarkable in-plane anisotropy, which manifests itself as additional rocking curve (RC) broadening, has been observed usual high-resolution X-ray diffraction (HRXRD) for both buffer overlayer; however, we a 90°-rotation i.e., from M-shape...
Interdiffusion in In0.32Ga0.68As0.984N0.016∕GaAs multiple quantum wells with well widths of 2 and 4nm, respectively, was investigated both experimentally theoretically. Maximum blueshifts 206 264meV the photoluminescence spectra were observed. Secondary ion mass spectrometry showed that In–Ga N–As interdiffusions played key roles for large blueshifts. The significant interdiffusion occurred at 650°C while N diffusion a temperature above 700°C. theoretical results are good agreement...
<sec> <title>UNSTRUCTURED</title> </sec>
To address the issue of insufficient dynamic range in conventional camera imaging under high scenes, a method based on digital micro-mirror device (DMD) has been designed. This utilizes DMD as an optical modulation to modulate incident light at pixel level. Additionally, continuous image mapping developed, enabling precise control over adjust exposure levels different pixels, thereby enhancing system's range. Mathematical logical deductions demonstrate that theoretical enhancement designed...
InGaN/GaN multiple quantum well (MQW) structures have been grown by metalorganic chemical vapor deposition on c-plane sapphire substrates. Inverted diamond-like surface defects (i.e., V-pits) with a density of [Formula: see text][Formula: text]cm[Formula: text] observed in an eight-QW structure Ga[Formula: text]In[Formula: text]N (3.6[Formula: text]nm thick) and GaN (12.7[Formula: as the well- barrier-material, respectively. The has significantly decreased simply reducing well-width to...