A5063869529- Advanced Optical Sensing Technologies
- Ocular and Laser Science Research
- Advanced Fluorescence Microscopy Techniques
- Advanced Semiconductor Detectors and Materials
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Fiber Laser Technologies
Chinese Academy of Sciences
2024
Institute of Semiconductors
2024
University of Chinese Academy of Sciences
2024
State Key Laboratory on Integrated Optoelectronics
2024
Abstract Planar semiconductor InGaAs/InP single photon avalanche diodes with high responsivity and low dark count rate are preferred detectors in near-infrared communication. However, even well-designed structures well-controlled operational conditions, the performance of SPADs is limited by inherent characteristics process growth quality materials. It difficult to ensure detection efficiency while controlled within a certain range at present. In this paper, we fabricated device thick InGaAs...
Crosstalk has become an urgent issue for single-photon avalanche diode arrays. In previous work, trenches were introduced between pixels to block the crosstalk optical path in planar InGaAs/InP arrays, since was considered as main mechanism. However, suppression effect of this solution is not satisfactory. Here, we demonstrate a carrier extraction structure efficiently reduce by electrically guiding photogenerated holes non-pixel region surface, find that optical-electrical dominant...
Abstract Planar InGaAs/InP avalanche photo diodes (APDs) are preferred single-photon detectors in the near-infrared region. They usually fabricated using double-diffusion method to avoid edge breakdown. However, this effect cannot be avoided completely as bias voltage increases Geiger mode (GM). In study, influence of deep diffusion window diameter on premature breakdown GM APDs was quantitatively analyzed optical probe scanning method. Both numerical simulations and experimental...