A5015997202- GaN-based semiconductor devices and materials
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- ZnO doping and properties
- Ga2O3 and related materials
- Semiconductor Quantum Structures and Devices
Chinese Academy of Sciences
2023-2024
University of Chinese Academy of Sciences
2023-2024
Institute of Microelectronics
2023-2024
This letter presents a meticulously designed gate structure featuring SiNx/AlN staggered stack on GaN <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${p}$ </tex-math></inline-formula> -channel field-effect transistors ( -FETs) to enhance the modulation capability of gate. It is found that insertion 4 nm plasma enhanced atomic layer deposition (PEALD) AlN between SiNx dielectric and recessed...
In this work, AlN polarization-enhancement interlayer (AlN-PEL) is adopted to enhance two-dimensional hole gas (2DHG) density in a p-GaN/AlN-PEL(∼2 nm)/AlGaN(&lt;6 nm)/GaN heterostructure, aiming at monolithic integration of p/n-channel field effect transistors (p-FETs) on GaN-on-Si substrate. Owing the strong built-in polarization AlN-PEL, high 2DHG over 2.3 × 1013 cm−2 with good immunity thermal freeze out realized. Assisted by two-step gate trench etching process, enhancement-mode...
Abstract In this study, we present the development of self-aligned p-channel GaN back gate injection transistors (SA-BGITs) that exhibit a high ON-state current. This achievement is primarily attributed to conductivity modulation effect 2-D electron gas (2DEG, gate) beneath hole (2DHG) channel. SA-BGITs with length 1 μ m have achieved an impressive peak drain current ( I D,MAX ) 9.9 mA/mm. The fabricated also possess threshold voltage 0.15 V, exceptionally minimal hysteresis 0.2 switching...