C. Li

ORCID: 0009-0006-1014-7024
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About
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Research Areas
  • Solid State Laser Technologies
  • Glass properties and applications
  • Luminescence Properties of Advanced Materials
  • Silicon Carbide Semiconductor Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Laser Material Processing Techniques
  • Photorefractive and Nonlinear Optics
  • Photonic Crystals and Applications
  • Semiconductor materials and devices
  • Thin-Film Transistor Technologies
  • Ion-surface interactions and analysis
  • Multilevel Inverters and Converters
  • Diatoms and Algae Research
  • Organic Light-Emitting Diodes Research
  • Mesoporous Materials and Catalysis
  • Photonic and Optical Devices
  • Laser-induced spectroscopy and plasma
  • Induction Heating and Inverter Technology
  • Silicon Nanostructures and Photoluminescence
  • Laser-Ablation Synthesis of Nanoparticles
  • Gold and Silver Nanoparticles Synthesis and Applications

Chongqing University of Posts and Telecommunications
2023-2025

Centre National de la Recherche Scientifique
1991-2016

Université Jean Monnet
2016

Laboratoire Hubert Curien
2016

Université Claude Bernard Lyon 1
1991-2016

State Key Laboratory of Transient Optics and Photonics
2016

Xi'an Institute of Optics and Precision Mechanics
2016

Institut des Nanotechnologies de Lyon
2009-2010

The results of an analysis the optical properties Er/sup 3+/ and (Er/sup 3+/, Yb/sup 3+/) doped Y/sub 2/SiO/sub 5/ single crystals that have been grown by Czokralski method are presented. These emit a very interesting fluorescence in eye-safe spectral range around 1550 nm they can be pumped efficiently with laser diodes at 980 nm. It is argued comparable to well-known phosphate glasses obtained.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

10.1109/3.135248 article EN IEEE Journal of Quantum Electronics 1992-04-01

Continuous-wave (cw) laser operation at room temperature of an Yb3+, Er3+ doped oxyapatite single crystal SrY4(SiO4)3O pumped 980 nm by InGaAs diode has been achieved around the eye-safe wavelength 1554 nm.

10.1063/1.110885 article EN Applied Physics Letters 1994-03-07

The time needed for metals to respond structurally electronic excitation is usually considered be set by picosecond-long electron-phonon coupling, hence limiting the rapid achievement of structural phase changes. Via time-resolved ellipsometry, we show that fs laser tungsten determines unexpectedly fast optical and transformations, almost on scale pulse, with sub-ps destructuring matter. If at low energies, below damage threshold, Fermi redistribution within $d$-band pseudogap populates...

10.1103/physrevb.94.224103 article EN Physical review. B./Physical review. B 2016-12-16

We demonstrate that ultrafast carrier excitation can drastically affect electronic structures in nonplasmonic metals and determine a transient, brief surface plasmonic state, potentially creating the conditions for switch. The initial state be related to $d$-band partial filling splitting, with pseudo-band-gap accommodating chemical potential. This determines quasi-resonant-like spectral behavior of optical constants pumping carriers across pseudogap, i.e., visible frequencies. relation...

10.1103/physrevb.93.165416 article EN Physical review. B./Physical review. B 2016-04-14

A snapback-free and low turn-off loss reverse-conducting lateral insulated gate bipolar transistor (RC-LIGBT) with integrated double self-biased n-channel MOS, named DSM is demonstrated by the TCAD SENTAURUS. The including extraction charge nMOS (EC-MOS) reverse conduction (RC-MOS) are both located at collector side. gates of EC-MOS RC-MOS shortly connected N <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...

10.1109/ted.2024.3394454 article EN IEEE Transactions on Electron Devices 2024-05-06

10.1016/j.photonics.2009.08.005 article EN Photonics and Nanostructures - Fundamentals and Applications 2009-08-30

A Reverse-Conducting LIGBT integrated with dual Self-Driving MOSFET (SDM), named SDM-LIGBT is proposed and investigated by the SENTAURUS. The SDM1 SDM2 are located at Emitter Collector side, respectively. Gate Drain of shortly connected together to LIGBT, N-buffer. Consequently, SDM driven <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {EC}}$ </tex-math></inline-formula> without an extra gate...

10.1109/ted.2023.3326413 article EN IEEE Transactions on Electron Devices 2023-10-30

A new type of porous-silicon based photonic biosensor is presented. The device a 1D planar crystal supporting resonant modes that can be excited at normal incidence. study theoretical performances demonstrates high sensitivity with similar in air and aqueous environment. experimental realization the sensor discussed preliminary biosensing experiments show very promising results.

10.1117/12.853878 article EN Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE 2010-04-30

With the Er3+ doped crystals we are looking presently for high power laser materials operating in eye-safe spectral region around 1.54 μm, with at least equivalent optical characteristics and performance - when codoped Yb3+-but better thermal properties than that of commercially available Er-doped phosphate . glasses (such as Kigre QE-7 example). Tm3+ systems, efficient diode-pumped mid infrared miniature lasers which can lase a tunable mode 2 μm region.

10.1364/assl.1991.mil1 article EN Advanced Solid-State Lasers 1991-01-01
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