A5045427014- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Ga2O3 and related materials
- Semiconductor Lasers and Optical Devices
- Vector-borne infectious diseases
- Entomological Studies and Ecology
- Semiconductor Quantum Structures and Devices
- ZnO doping and properties
- Color Science and Applications
- Semiconductor materials and interfaces
- Forest Insect Ecology and Management
University of Padua
2023-2024
Centre National de la Propriété Forestière
2019
The long-term stability of ultraviolet (UV)-C light-emitting diodes (LEDs) is major importance for many applications. To improve the understanding in this field, we analyzed degradation AlGaN-based UVC LEDs and modeled variation electrical characteristics by 2D simulations based on results deep-level optical spectroscopy (DLOS). increase forward leakage current observed during ageing was ascribed an trap-assisted tunneling. analysis kinetics suggests role a defect diffusion process, possibly...
The lifetime of deep-ultraviolet light-emitting diodes (LEDs) is still limited by a number factors, which are mainly related to semiconductor defects, and need be clarified. This paper improves the understanding UV LED degradation, presenting an analysis based on combined deep-level transient spectroscopy (C-DLTS), electro-optical characterization, simulations, carried out before during constant current stress test. original results this (i) C-DLTS measurements allowed us identify three...
Abstract We studied four AlGaN-based 265 nm LEDs with increasing QW thickness (1.4, 3, 6 and 9 nm) during a constant current stress at 100 A cm −2 . focused our attention on the parasitic components of emission spectra low levels optical power recovery observed high levels. associated every peak or band to region in device where they can be generated, also demonstrating if are related band-to-band radiative through defects. At levels, we showed simultaneous effect decrease injection...
UVC LEDs are of fundamental importance for many applications, including sterilization and disinfection, thanks to their high efficiency low environmental impact. However, several physical processes still limit the lifetime reliability these devices. We present recent case studies in field LED reliability. Initially, we review performance/efficiency state-of-the-art commercial devices, discuss issues related self-heating, electro-optical transient behavior. Then, impact defects on...
We present a detailed analysis of the effect low- and high-temperature operating lifetime (LTOL HTOL) carried out on 0.15 μm GaN HEMTs for RF applications. Based several stress experiments at different temperature levels, a) we demonstrate existence two degradation modes consisting, respectively, in negative positive shift threshold voltage; b) temperature-dependent I-V measurements indicate that no modification Schottky barrier height takes place after stress; c) VTH is ascribed to...
The market of Ultraviolet (UV) Light Emitting Diodes (LEDs) is expected to expand substantially in the coming years, thanks disinfection properties UV light; however, a detailed study on reliability-limiting processes fundamental step, for an effective deployment this technology. We investigated degradation mechanisms AlGaN-based Single Quantum Well (SQW) LEDs, with nominal emission wavelength 265 nm, area 0.1 mm<sup>2</sup> and current density 100 A·cm<sup>-2</sup>. By means constant stress...