A5048195675- Luminescence Properties of Advanced Materials
- Diamond and Carbon-based Materials Research
- Solid State Laser Technologies
- Semiconductor materials and devices
- Radiation Detection and Scintillator Technologies
- Luminescence and Fluorescent Materials
- Glass properties and applications
- Lanthanide and Transition Metal Complexes
- Nanocluster Synthesis and Applications
- Advancements in Semiconductor Devices and Circuit Design
- Nanowire Synthesis and Applications
- Silicon Nanostructures and Photoluminescence
- Random lasers and scattering media
- Inorganic Chemistry and Materials
- Advanced Fiber Laser Technologies
- Crystallization and Solubility Studies
- Ion-surface interactions and analysis
- Perovskite Materials and Applications
- X-ray Diffraction in Crystallography
- Integrated Circuits and Semiconductor Failure Analysis
- Quantum optics and atomic interactions
- Polyoxometalates: Synthesis and Applications
- Advanced Nanomaterials in Catalysis
- Quantum Dots Synthesis And Properties
- Crystal Structures and Properties
University of Tsukuba
2020-2024
National Institute of Advanced Industrial Science and Technology
2020-2021
Zhengzhou University
2019
Institute of Physics
2019
Chinese Academy of Sciences
2019
State Key Laboratory on Integrated Optoelectronics
2016-2017
Jilin University
2016-2017
Jilin Medical University
2016-2017
Summary of main observation and conclusion Silver cluster‐assembled materials (SCAMs) are emerging multi‐functional have attracted great attention recently. In this work, we prepared a new SCAM {[Ag 18 (S t Bu) 10 (CF 3 COO) 2 (PhPO )(PhPO H) 4 (bpy‐NH ) ]∙(PhPO H )} n (denoted as Ag bpy‐NH ), by facile one‐pot method. adopts chain‐like structure made clusters bridged bipyridyl linkers. exhibits reversible luminescent mechanochromism upon mechanical stimulation solvent treatment. Moreover,...
Under 978 nm near-infrared (NIR) excitation, blue upconversion (UC) emissions from CaF<sub>2</sub>:Cu<sup>2+</sup>,Yb<sup>3+</sup> were first observed at ∼420 nm.
Relationships between the phase, reaction time, and UCL intensity of NaLuF<sub>4</sub> nanocrystals are investigated.
Under 978 nm near infrared (NIR) excitation, ultraviolet (UV) upconversion (UC) emissions from Pb<sup>2+</sup> ions in CaF<sub>2</sub>:Pb<sup>2+</sup>,Yb<sup>3+</sup> were first observed at room temperature.
Upconversion emission spectra of different concentrations Y<sup>3+</sup> co-doped CaF<sub>2</sub>:Yb<sup>3+</sup>/Eu<sup>3+</sup> powders. Illustrations represent the series luminescence photos samples.
Herein, we report the phenomenon of upconversion luminescence from Sm<sup>2+</sup> ions, which demonstrates that changeable valence lanthanides can serve as ions for optical frequency transformation.
Polarons can control carrier mobility and also be used in the design of quantum devices. Although much effort has been directed into investigating nature polarons, observation defect-related polarons is challenging due to electron-defect scattering. Here we explore polaronic behavior nitrogen-vacancy (NV) centers a diamond crystal using an ultrafast pump-probe technique. A 10-fs optical pulse acts as source high electric field exceeding dielectric breakdown threshold, turn exerting force on...
Abstract The study of nitrogen-vacancy (NV) centers in diamond are growing attractive the application quantum devices. Here, electrical control NV charge state and defects induced by nitrogen ions implantation were investigated transient photocapacitance (TPC) spectroscopy photoluminescence (PL) spectroscopy. experiments show that thresholds 1.2 eV appeared TPC spectra probably due to presence excited defect energy levels related vacancy or center. Alternatively, 2.2 observed spectrum is...
In our previous study, we have reported the cooperative luminescence of Yb<sup>3+</sup>-trimers and cooperatively sensitized Gd<sup>3+</sup> by Yb<sup>3+</sup>-tetramers in a doped CaF<sub>2</sub> host.
Defects in vertical diamond Schottky barrier diodes have been investigated by photocurrent spectroscopy supercontinuum light photon energy ranging from 1.24 to 3.1 eV, and 170 296 K. The spectra exhibit three thresholds located around 1.3, 2.2 2.5 which are related defects levels the active layer of (a slightly doped boron layer). Although origin reported is still under discussion, they can be ascribed hydrogen nitrogen defects. Moreover, generated explained a two-photon process.
We observed an unusual luminescent phenomenon of Yb3+ in CaF2:Yb3+, Tb3+. Upon excitation at 380 nm, the downconversion luminescence ions exhibited a monotonic decreasing trend with increase Tb3+ concentration from 0.025 mol% to 1 mol%, which implied unique quenching mechanism. Its inverse process, cooperatively sensitized showed that upconversion emission also quenched low (0.075 mol%) ions. To explain above phenomenon, we further performed optically inactive rare earth ion doping...