A5036974709- Quantum and electron transport phenomena
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Particle Accelerators and Free-Electron Lasers
- Integrated Circuits and Semiconductor Failure Analysis
- Particle Detector Development and Performance
- Gyrotron and Vacuum Electronics Research
- Particle accelerators and beam dynamics
- Semiconductor Quantum Structures and Devices
- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Electron and X-Ray Spectroscopy Techniques
- Sensor Technology and Measurement Systems
- Quantum Information and Cryptography
- Laser Design and Applications
- Diamond and Carbon-based Materials Research
- Semiconductor materials and interfaces
- Physics of Superconductivity and Magnetism
- Mechanical and Optical Resonators
- Quantum optics and atomic interactions
- Analog and Mixed-Signal Circuit Design
- Topological Materials and Phenomena
- Ion-surface interactions and analysis
- Particle physics theoretical and experimental studies
- Advanced Electrical Measurement Techniques
National Sun Yat-sen University
2023-2025
London Centre for Nanotechnology
2014-2016
University College London
2013-2016
University of California, Berkeley
2003-2015
Lawrence Berkeley National Laboratory
1982-2015
Carnegie Mellon University
2005
Integrating two-dimensional (2D) materials into circuit quantum electrodynamics (cQED) devices is an emerging field in recent years. This integration not only facilitates the exploration of potential applications information processing but also enables study material's fundamental properties using microwave techniques. While most studies employ 2D coplanar architectures with scalability potential, three-dimensional (3D) cavity-based cQED devices, due to their simpler design, offer advantage...
The ability to inject dopant atoms with high spatial resolution, flexibility in species, and single ion detection fidelity opens opportunities for the study of fluctuation effects development devices which function is based on manipulation quantum states atoms, such as proposed computers. authors describe a atom injector, imaging alignment capabilities scanning force microscope (SFM) are integrated beams from series sources sensitive current transients induced by incident ions. Ion...
We have performed continuous wave and pulsed electron spin resonance measurements of implanted bismuth donors in isotopically enriched silicon-28. Donors are electrically activated via thermal annealing with minimal diffusion. Damage from ion implantation is repaired during as evidenced by narrow linewidths (B_pp=12uT long coherence times T_2=0.7ms, at temperature T=8K). The results qualify a promising candidate for qubit integration silicon.
We report measurements of spin-dependent scattering conduction electrons by neutral donors in accumulation-mode field-effect transistors formed isotopically enriched silicon. Spin-dependent was detected using electrically magnetic resonance where spectra show resonant changes the source-drain voltage for and bound to donors. discuss utilization readout donor spin states silicon based quantum computers.
A fully differential square frame resonator (SFR), operating at resonant frequencies of 6.184MHz and 17.63MHz for the fundamental 2/sup nd/ harmonic, respectively, is introduced, which highest frequency reported to date in CMOS-MEMS technology. In-plane resonators have been fabricated directly on a conventional CMOS substrate with on-chip amplifiers. To enhance output motional current, an electrothermal-actuated electrode designed reduce input/output capacitive gap. 5/spl mu/m-thick, 4 /spl...
We report the detection of single ion impacts through monitoring changes in source-drain currents field effect transistors at room temperature. Implant apertures are formed interlayer dielectrics and gate electrodes planar, microscale by electron beam assisted etching. Device increase due to generation positively charged defects oxides when ions (Sb12+,14+121 Xe6+; 50–70keV) impinge into channel regions. damage is repaired rapid thermal annealing, enabling iterative cycles device doping...
We have measured the electrically detected magnetic resonance of donor-doped silicon field-effect transistors in resonant X- (9.7 GHz) and W-band (94 microwave cavities. The two-dimensional electron gas signal increases by 2 orders magnitude from X to W band, while donor signals are enhanced over 1 order magnitude. Bolometric effects spin-dependent scattering inconsistent with observations. propose that polarization transfer is main mechanism giving rise spin signals.
We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using such structures. The is implemented MeV ion implantation through SOI layer forming a metallic electrode handle wafer, enabling large uniform electric fields up to $\sim$ 2 V/$\mu$m be applied across layer. Utilizing this structure we parameters embedded...
We demonstrate an all-electrical donor nuclear spin polarization method in silicon by exploiting the tunable interaction of bound electrons with a two-dimensional electron gas, and achieve over two orders magnitude hyperpolarization at T=5 K B=12 T in-plane magnetic field. also show intricate dependence effects on orientation field, both antipolarization can be controllably achieved quantum Hall regime. Our results that qubits initialized through local gate control electrical currents...
We describe a low-temperature sample probe for the electrical detection of magnetic resonance in resonant W-band (94 GHz) microwave cavity. The advantages this approach are demonstrated by experiments on silicon field-effect transistors. A comparison with conventional low-frequency measurements at X-band (9.7 same devices reveals an up to 100-fold enhancement signal intensity. In addition, lines that unresolved clearly separated measurements. Electrically detected high fields and frequencies...
We present a unique design and fabrication process for lateral, gate-confined double quantum dot in an accumulation mode metal-oxide-semiconductor (MOS) structure coupled to integrated microwave resonator. All electrostatic gates the are contained single metal layer, use of MOS allows control location two-dimensional electron gas via gates. Numerical simulations confinement potential performed along with estimate coupling Prototype devices fabricated characterized by transport measurements...
The spatial broadening, due to the effective electron beam diameter, of an x-ray intensity profile as measured with a scanning microscope is corrected by Fourier method. A technique presented whereby convergent series solution obtained adjusting data within its random uncertainty. numerical example along two experimental results are illustrate
Deterministic doping by single ion implantation, the precise placement of individual dopant atoms into devices, is a path for realization quantum computer test structures where bits (qubits) are based on electron and nuclear spins donors or color centers. We present donor - dot type qubit architecture discuss use medium highly charged ions extracted from an Electron Beam Ion Trap/Source (EBIT/S) deterministic doping. EBIT/S attractive formation due to relatively low emittance beams potential...
Spin-dependent transport properties of micro- and nano-scale electronic devices are commonly studied by electrically detected magnetic resonance (EDMR). However, the applied microwave fields in EDMR experiments can induce large rectification effects result perturbations device bias conditions excessive noise spectra. Here we examine silicon metal-oxide-semiconductor field-effect transistors exposed to X-band irradiation show that be effectively suppressed incorporating a global capacitive...
A portable dosimeter has been developed for monitoring human exposure to power-frequency magnetic fields in residential and occupational environments. The microprocessor-controlled designed measure 60-Hz field intensities that vary from 20 μG 600 mG, thereby covering the broad range of levels generally encountered households settings. digitized resolution 2.5 is provided 10 mG range, 150 range. Automatic switching implemented both signal processing data acquisition.
The SLD detector consists of five major subsystems, each with associated front-end electronics and an integrated FASTBUS control data acquisition system. This paper highlights the choices among electronic technologies that have been developed for electronics. common control, calibration, architectures are described. functions selected circuits, standard cells, gate arrays, hybrids summarized, integration these into path is Particular attention directed to four areas technology detector: (1)...
Spintronics carry the potential to dramatically improve processing speeds and densities in future computing devices. This technology relies on manipulating electron spins semiconductors, this paper it is shown that manipulation can be sensitively performed using microwave excitation. provides for providing unprecedented clarity of temporal spin dynamics these systems.
Transmon-type superconducting qubits have become a popular platform for quantum computing due to their robust qubit coherence properties. In recent years, different types of materials been searched replace the Al 2 O 3 tunnel barrier in conventional Al-based Josephson junctions, order explore new functions utilizing distinct nature chosen materials. this report, we introduce our works involving using Weyl semimetals and graphene as component junctions designs coupling coplanar waveguide...