A5101720429- GaN-based semiconductor devices and materials
- Acoustic Wave Resonator Technologies
- Semiconductor materials and devices
- Gas Sensing Nanomaterials and Sensors
- Ferroelectric and Piezoelectric Materials
- Quantum and electron transport phenomena
- Zeolite Catalysis and Synthesis
- Metal-Organic Frameworks: Synthesis and Applications
- Electronic and Structural Properties of Oxides
- Semiconductor Quantum Structures and Devices
- Ultrasonics and Acoustic Wave Propagation
- Photorefractive and Nonlinear Optics
- Microwave Dielectric Ceramics Synthesis
- Chemical Synthesis and Characterization
- Land Use and Ecosystem Services
- Economic and Environmental Valuation
Nanjing University
2007-2023
Collaborative Innovation Center of Advanced Microstructures
2009-2011
Nanyang Technological University
2009
Southwest University
2009
Using the Debye model and existing experimental data of pyroelectric coefficient AlN, temperature dependence as well spontaneous polarization AlN is calculated over a wide range from 0to1000K. The proportional to T3 at low increases acutely 0 around 400K, then gently 400to1000K. It makes uniquely suitable for application in high sensors. changes little 0to1000K, which indicates that features III-nitrides based devices will hardly be degraded by change polarization.
As competitive next generation pyroelectric sensors, the pyroelectricity of GaN has been investigated. The specific heat wurtzite is calculated from Raman-scattering data. contributions acoustic modes and optical to primary coefficient are 0 600 K. An explicit expression as a function temperature derived. It found that can be expressed sum Debye Einstein function. substantially different conventional ferroelectrics-based devices which described only by
Determining the spontaneous polarization is a fundamental problem in III-nitride field. However experimental value of has not yet been reported. In this study, thermodynamic model proposed to investigate GaN from high-pressure phase transition. Total macroscopic directly expressed as coefficients expansion, and these are found be conducted experiments. The estimated around −0.022 C/m2.
A phenomenological thermodynamic theory of ferroelectric thin films on noncubic substrates is developed using a nontraditional form the potential. For single-domain PbZr1−xTixO3 50∕50 film, “lattice strain-temperature” phase diagram constructed. It found that lattice strain induces shift Curie temperature transition. The unusual r forbidden in single crystals and bulk ceramics appears film. strain-polarization” strain-dielectric constant” at room are also predicted. They all show...
Schrodinger equation and Poisson are solved self-consistently for Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Ga N/GaN heterojunctions grown along the c axis, then distribution of electrons exact energy all bounded states confined in gotten, found to take up first two subbands. Considerable magnitude Rashba spin splitting subband at Fermi level is obtained. The changes with barrier thickness, doping concentration calculated....
This paper investigates the spatial mechanisms and impacts of land transfer on green total factor productivity (GTFP) in economically dynamic Yangtze River Delta region China. Using urban-level panel data from 2007 to 2020 applying econometric models, study examines relationship between GTFP. The results analysis show that overall contributes positively improvement mediating mechanism industrial restructuring upgrading shows statistically significant effects. Further investigation reveals...