A5115745196- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Magnetic properties of thin films
- Multiferroics and related materials
- Magnetic and transport properties of perovskites and related materials
- Ferroelectric and Piezoelectric Materials
Consejo Nacional de Investigaciones Científicas y Técnicas
2025
Comisión Nacional de Energía Atómica
2025
National Institute of Industrial Technology
2025
We present an experimental study of the magnetoelectric coupling in Fe-Ga/Pb[(Mg1/3Nb2/3)O3]0.68-[PbTiO3]0.31 thin-film multiferroic composite using x-ray magnetic circular dichroism and ferromagnetic resonance (FMR). Our measurements show evidence for a charge-mediated mechanism, suggested by asymmetric remanence (Mrem) behavior under opposite electric fields (±E) field (Hr) FMR measurements. Also, reveal perpendicular anisotropy that can be related to interface charge effect it is tunable...
Abstract Future neuromorphic architectures will require millions of artificial synapses, making it mandatory to understand the physical mechanisms behind their plasticity functionalities. In this work, we propose a simplified spin memristor, where resistance can be controlled by magnetic field pulses, based on Co/Pt multilayer with perpendicular anisotropy as synapsis emulator. We demonstrate and spike time dependence (STDP) in device explored underlying using Kerr microscopy imaging Hall...