A5108924221- Semiconductor Quantum Structures and Devices
- Quantum optics and atomic interactions
- Video Surveillance and Tracking Methods
- Radio Frequency Integrated Circuit Design
- Simulation and Modeling Applications
- Advanced Semiconductor Detectors and Materials
- Quantum Dots Synthesis And Properties
- VLSI and Analog Circuit Testing
- Autonomous Vehicle Technology and Safety
- GaN-based semiconductor devices and materials
- Silicon Carbide Semiconductor Technologies
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Quantum Information and Cryptography
Institute of Microelectronics
2024
Northwest Normal University
2024
Chinese Academy of Sciences
2014-2024
Zhejiang University
2023
Institute of Semiconductors
2014
We report on resonant light scattering experiments in which a single InAs quantum dot is exposed to two independently tunable continuous-wave lasers while the scattered analyzed background free, with high spectral and temporal resolution. In contrast well-known monochromatic case exhibiting Rabi oscillations, this bichromatic additional field introduces oscillations at half difference of laser frequencies harmonics thereof, persisting beyond natural lifetime. The familiar ``dressed-states''...
In this work, an efficient switching transient analytical model is proposed for P-GaN gate HEMTs, in which the dynamic capacitance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$C_{\mathrm{G}}(V_{\text{DS}},\ V_{\text{GS}})$</tex> characteristics during has been taken into consideration. Meanwhile, modeling of external inductance, PCB, driver IC and surface mounting technology (SMT) components double-pulse characterization platform are The...
This study introduces a multidimensional driving safety monitoring system that integrates millimeter-wave radar and an Arduino Uno-based alcohol sensor. The aims to enhance prevent accidents by real-time analysis of the environment, driver's condition, vehicle dynamics using machine vision technology. Utilizing radar, precisely detects obstacles pedestrians around vehicle, facilitating efficient distance speed measurements support automatic emergency braking collision warnings. Additionally,...
In this paper, combining low deposition rate with proper growth temperature, we have developed a way to prepare very low-density quantum dots (QDs) suited for the study of single QD properties without resorting submicron lithography. Experiment results demonstrate that InAs desorption is significant during growing density QDs. Ripening QDs clearly observed post-growth annealing. Photoluminescence spectroscopy reveals emission wavelength arrives at 1332.4 nm GaAs capping layer.