A5083546723- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Advancements in Battery Materials
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Supercapacitor Materials and Fabrication
- 2D Materials and Applications
- Advanced Battery Materials and Technologies
- Nanowire Synthesis and Applications
- MXene and MAX Phase Materials
- Advanced Battery Technologies Research
- Organic Electronics and Photovoltaics
- ZnO doping and properties
- Molecular Junctions and Nanostructures
- Conducting polymers and applications
- Analog and Mixed-Signal Circuit Design
- Graphene research and applications
- Electrocatalysts for Energy Conversion
- Advanced Sensor Technologies Research
- Perovskite Materials and Applications
- Advanced battery technologies research
- Transition Metal Oxide Nanomaterials
- Silicon and Solar Cell Technologies
- Laser Design and Applications
Chinese Academy of Sciences
2008-2025
Institute of Microelectronics
2017-2025
Guangxi University of Science and Technology
2020-2024
University of Chinese Academy of Sciences
2017-2024
Northwestern Polytechnical University
2018-2024
Guangxi Normal University
2015-2023
Peng Cheng Laboratory
2022
Central South University of Forestry and Technology
2020-2022
Central South University
2020-2022
China Aerodynamics Research and Development Center
2022
Two-dimensional (2D) materials provide extraordinary opportunities for exploring phenomena arising in atomically thin crystals. Beginning with the first isolation of graphene, mechanical exfoliation has been a key to high-quality 2D but despite improvements it is still limited yield, lateral size and contamination. Here we introduce contamination-free, one-step universal Au-assisted method demonstrate its effectiveness by isolating 40 types single-crystalline monolayers, including elemental...
For the first time, we propose a stackable vertical channel-all-around (CAA) In–Ga–Zn-O field-effect transistor (IGZO FET) for high-density 4F<sup>2</sup> and long-retention 2T0C dynamic random access memory (DRAM) application. The device is fabricated in back-end-of-line (BEOL) compatible process flow where channel gate-stack are deposited by plasma-enhanced atomic layer deposition (PEALD). impact of IGZO cycle ratio plasma power on device’s electrical performance...
Abstract With the rapid development of advanced technologies in Internet Things era, higher requirements are needed for next‐generation electronic devices. Fortunately, organic thin film transistors (OTFTs) provide an effective solution skin and flexible wearable devices due to their intrinsic features mechanical flexibility, lightweight, simple fabrication process, good biocompatibility. So far considerable efforts have been devoted this research field. This article reviews recent advances...
Abstract Emulating key synaptic functions in electronic devices is quite significant bioinspired applications. Artificial thin film transistors (TFT) offer a promising solution for efficient synapse simulation. Herein, artificial synapses based on indium–gallium–zinc oxide (IGZO) TFT are fabricated and the photoelectric plasticity investigated. Versatile including paired‐pulse facilitation, depression, short‐term memory to long‐term transition emulated. More importantly, these can be...
Drawing inspiration from biology, neuromorphic systems are of great interest in direct interaction and efficient processing analogue signals the real world could be promising for development smart sensors. Here, we demonstrate an artificial sensory neuron consisting InGaZnO4 (IGZO4)-based optical sensor NbOx-based oscillation series, which can simultaneously sense information even beyond visible light region encode them into electrical impulses. Such vision neurons convey visual a parallel...
Advancements in the semiconductor industry introduce novel channel materials, device structures, and integration methods, leading to intricate physics challenges when characterizing devices at circuit level. Nevertheless, accurate models for emerging are crucial physics-driven TCAD-to-SPICE flows enable increasingly vital design technology co-optimization (DTCO). Particularly ultra-scaled where quantum effects become significant, this led introduction of empirical model parameters a...
In this work, the contact length scaling in dual-gate (DG) InGaZnO (IGZO) thin film transistors (TFTs) was experimentally investigated. With source/drain metal of Nickel (Ni) deposited ultra-high vacuum condition ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim \,\,{8}\times {10} ^{-{8}}$ </tex-math></inline-formula> Torr), resistance notation="LaTeX">${R}_{C}{)}$ is achieved to be as low...
Abstract The development of van der Waals heterostructures in 2D materials systems has attracted considerable interests for exploring new insights (opto‐) electrical characteristics, device physics, and novel functional applications. Utilizing organic molecular material with strong electron withdrawing ability, charge transfer interfaces are formed between 2,3,5,6‐tetrafluoro‐7,7,8,8‐tetracyanoquinodimethane (F 4 TCNQ) MoS 2 , via which the modulation onset voltages optimization subthreshold...
Bimetallic sulfide SnS/MoS<sub>2</sub> heterostructures decorating N, S co-doped carbon nanosheets have been synthesized, and evaluated as high performance anode materials for SIBs.
A facile hydrothermal method to fabricate Sn/MoS<sub>2</sub>/C composite as anode material for lithium ion batteries with outstanding performance.
Litchi-like porous Fe/N/C spheres with atomically dispersed FeN<sub>x</sub> promoted by sulfur are highly efficient electrocatalysts for high-power Zn–air batteries.
For the first time, vertical channel-all-around (CAA) IGZO FET is scaled down to an active footprint of less than 50×50 nm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . With optimized thickness (~3 nm) and high-K dielectric (HfO <inf xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> ), high current density 32.8 μA/μm at V xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> +1 with subthreshold swing 92 mV/dec achieved in CAA channel...
For the first time, we propose and experimentally demonstrate one novel dual-gate (DG) IGZO 2T0C cell design for high-density high-performance DRAM application. Through process optimization, ultra-scaled DG transistor of $\mathrm{L}_{\mathrm{C}\mathrm{H}}=13.9$nm achieves ultra-high on-state current 1500$\mu$A/$\mu$ m@$\mathrm{V}_{\mathrm{D}\mathrm{S}}=1$V low $\mathrm{R}_{\mathrm{C}}$. By using gate FET to control read operation another store data in configuration, this new provides more...
In this work, back end of line (BEOL)-compatible amorphous indium–gallium–zinc oxide (a-IGZO) transistors are monolithically stacked on top first-layer a-IGZO-based analog/digital circuits, including a single-stage amplifier and five-stage ring oscillator (RO). The second-layer a-IGZO fabricated with low thermal budget ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$< 200~^{\circ }\text{C}$...
A 3D net-like structured fluorescent aerogel as a highly effective adsorbent and sensitive optical sensor of Cr(<sc>vi</sc>) was fabricated.
Origin of nonlinear transport phenomena in conducting polymers has long been a topic intense controversies. Most previous knowledge attributed the macroscopic I-V characteristics to individual behaviors elementary resistors network. In this Letter, we show via systematic dimensionality-dependent investigation, that understanding must include collective effect percolation The possible mediation threshold p_{c} by controlling samples' dimensionality unveiled growth paths driven electric field,...
A relationship between the temperature and dielectric strength of a Maxwell–Wagner (MW) type relaxation was deduced based on conventional two-layer model for inhomogeneous systems under usual assumptions that conductivity each layer obeys thermally activated law constant is relatively independent. The relation shows peak height in imaginary part complex permittivity MW-type increases with decreasing saturates at low enough temperature. This behavior well-proved by both numeral experimental...
Abstract In atomically-thin two-dimensional (2D) semiconductors, the nonuniformity in current flow due to its edge states may alter and even dictate charge transport properties of entire device. However, influence on electrical 2D materials has not been sufficiently explored date. Here, we systematically quantify state contribution monolayer MoS 2 /WSe field-effect transistors, revealing that at low temperature is dominated by conduction with nonlinear behavior. The metallic are revealed...