A5009062731- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- 2D Materials and Applications
- Ferroelectric and Negative Capacitance Devices
- Quantum and electron transport phenomena
- Graphene research and applications
- Nanowire Synthesis and Applications
- Molecular Junctions and Nanostructures
- MXene and MAX Phase Materials
- Organic Electronics and Photovoltaics
- Conducting polymers and applications
- Advanced Memory and Neural Computing
- Organic Light-Emitting Diodes Research
- Surface and Thin Film Phenomena
- Advanced Data Storage Technologies
- Photonic and Optical Devices
- Thin-Film Transistor Technologies
- Chalcogenide Semiconductor Thin Films
- Silicon Nanostructures and Photoluminescence
- Perovskite Materials and Applications
- Advanced Chemical Physics Studies
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- Organic and Molecular Conductors Research
- High Temperature Alloys and Creep
National Natural Science Foundation of China
2023-2025
Chinese Academy of Sciences
2014-2024
Lishui Central Hospital
2023
Institute of Semiconductors
2012-2022
Wuhan University
2022
Dalian Maritime University
2022
State Key Laboratory of Information Engineering in Surveying Mapping and Remote Sensing
2022
University of Chinese Academy of Sciences
2017-2020
Hunan University
2020
Institute of High Energy Physics
2019
Several spectroscopic methods were applied to study the characteristic properties of electronic excitations in thin films regioregular and regiorandom polythiophene polymers. In polymers, which form two-dimensional lamellar structures, increased interchain coupling strongly influences traditional one-dimensional polymer chains. The photogenerated charge (polarons) show delocalization that results a relatively small polaronic energy, multiple absorption bands gap where lowest energy band...
Polarized detection has been brought into operation for optics applications in the visible band. Meanwhile, an advanced requirement short-wave near-infrared (SW-NIR) (700–1100 nm) is proposed. Typical IV–VI chalcogenides—2D GeSe with anisotropic layered orthorhombic structure and narrow 1.1–1.2 eV band gap—potentially meets demand. Here we report unusual angle dependences of Raman spectra on high-quality crystals. The polarization-resolved absorption (400–950 polarization-sensitive...
As Moore's law approaches its end, two-dimensional (2D) materials are intensely studied for their potentials as one of the ``More than Moore' (MM) devices. However, ultimate performance limits and optimal design parameters such devices still unknown. One common problem 2D-material-based device is relative weak on-current. In this study, Schottky-barrier field-effect transistors (SBFETs) consisting in-plane heterojunctions 1T metallic-phase 2H semiconducting-phase transition-metal...
Monolayer Schottky barrier (SB) field-effect transistors based on the in-plane heterojunction of 1T/1T'-phase (metallic) and 2H-phase (semiconducting) transition-metal dichalcogenides (TMDs) have been proposed following recent experimental synthesis such devices. By using density functional theory ab initio simulations, intrinsic device performance, sub-10 nm scaling, performance boosting MoSe2, MoTe2, WSe2, WTe2, SB are systematically investigated. We find that heights (SBHs) these...
Using a variety of optical probes techniques we studied the photoexcitation dynamics in thin films poly-3-hexyl thiophene with regioregular order that forms lamellae structures increased interchain interaction, as well regiorandom keeps chainlike morphology. In found intrachain excitons correlated induced absorption and stimulated emission bands are primary excitations; they give rise to moderately strong photoluminescence band. films, on contrary, excitations much larger component; this...
Atomically-thin 2D semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their full acceptance as compliant integration in logic devices. Two key-components master are the barriers at metal/semiconductor interfaces and mobility of channel, which endow building-blocks ${pn}$ diode field effect transistor. Here, we devised a reverted stacking...
Germanium selenide (GeSe) is an isoelectronic analogue of phosphorene, which has been studied widely in recent experiments. In this paper, we have investigated tunable electronic structures and transport properties 2D quasi-1D GeSe by using a self-consistent ab initio approach. The calculated band show stretching compression the zigzag direction armchair direction, all can enlarge gap nanosheet. However, will reduce addition, appropriate compressions both directions change nanosheet from...
Large scale (up to 30 μm in lateral size) atomically thin hexagonal ZrS<sub>2</sub> nanoflakes were prepared on traditional substrates (silica, sapphire) through a temperature dependent growth process.
We observe directly the lattice vibration and its multifold effect on electron transport in zigzag graphene nanoribbons simulation by utilizing an efficient combined method. The results show that fluctuates greatly due to incessant of nanoribbons. More interestingly, behaves like a double-edged sword it boosts conductance symmetric (containing even number chains along width direction) while weakens asymmetric As result, reported large disparity between conductances two kinds at 0 K is fact...
The large tunneling magnetoresistance (TMR) effect was observed in magnetic junctions (MTJs), which have atomic thickness because of the use two-dimensional ferromagnetic CrX<sub>3</sub> (X = Br, I) monolayers.
This paper addresses the problem of document image dewarping, which aims at eliminating geometric distortion in images for digitization. Instead designing a better neural network to approximate optical flow fields between inputs and outputs, we pursue best readability by taking text lines boundaries into account from constrained optimization perspective. Specifically, our proposed method first learns boundary points pixels then follows most simple observation that both horizontal vertical...
We studied optical absorption of polarons in $\ensuremath{\pi}$-conjugated oligomers and polymers using the photoinduced technique as well chemical doping spectra from literature. find that photon energy polaron low-energy transition obeys a relationship depends only on oligomer-length wide class unsubstituted substituted oligomer solutions films. Based this observation, we show polymer films can be either confined or quite delocalized, depending individual semiconductor. In high mobility...
We observed photoinduced quantum interference antiresonances between several discrete infrared-active vibrations and the lower-polaron continuous absorption band in a series of pi-conjugated polymer films having superior planar orders, where polaron transition energy is relatively small. The Fano-type are well explained by extending amplitude mode model beyond adiabatic limit. agreement data confirms presence electronic above state. show that high frequency modes strongly coupled to...
Abstract The optimization of the atomic and molecular clusters with a large number atoms is very challenging topic. This article proposes parallel differential evolution (DE) scheme for large‐scale clusters. It combines modified DE algorithm improved genetic operators strategy migration operator to address problems numerous local optima computational demanding. Results Lennard–Jones (LJ) Gupta‐potential Co show performance surpasses those in previous researches terms successful rate,...
Inspired by the novel mechanism of reducing thermal conductivity local phonon resonance instead inducing structural defects, we investigate effect side branching on thermoelectric properties [Formula: see text] nanoribbons, and prove that is a highly efficient for enhancing thermoelectricity different kinds nanoribbons. For both armchair zigzag branches result in not only significant blocking transport but also notable increase Seebeck coefficient. Consequently, figure merit nanoribbon...
The band-to-band tunneling of monolayer transition metal dichalcogenides nano-junction is investigated using atomistic ab initio quantum transport simulations. From the simulation, it found that vacancy defect in two-dimensional MX2 (M = Mo,W; X S,Se) diode can dramatically boost on-state current up to 10 times while maintaining device sub-threshold swing. performance enhancement mechanism discussed detail by examining partial density states system. It induces band-gap states, which reduce...
We demonstrate dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer can be compensated by DG structure. It produces large current density (>100 μA/μm for a monolayer), steep subthreshold swing (SS) (∼100 mV/dec 5 nm thickness), and high on/off ratio (>107 10 thickness). Such structure not only improves electrostatic control but also provides an extra degree freedom manipulating threshold voltage (VTH) SS separately tuning top back...
Abstract In atomically-thin two-dimensional (2D) semiconductors, the nonuniformity in current flow due to its edge states may alter and even dictate charge transport properties of entire device. However, influence on electrical 2D materials has not been sufficiently explored date. Here, we systematically quantify state contribution monolayer MoS 2 /WSe field-effect transistors, revealing that at low temperature is dominated by conduction with nonlinear behavior. The metallic are revealed...
The charge trapping that occurs at a semiconductor/dielectric junction is an important issue in semiconductor physics, $e.g.$ for MOSFETs. Unfortunately, first-principles research here complicated by many technical difficulties. This study provides general, integrated framework, including structure construction, GPU-accelerated DFT calculations, and Marcus theory, to the from crystalline Si defects amorphous SiO${}_{2}$. results shed light on critical questions concerning what dominates...