Ultra-wide bandgap semiconductor Ga2O3 based electronic devices are expected to perform beyond wide counterparts GaN and SiC. However, the reported power figure-of-merit hardly can exceed, which is far below projected material limit. Major obstacles high breakdown voltage requires low doping PN junction termination, contradicting with specific on-resistance simultaneous achieving of n- p-type doping, respectively. In this work, we demonstrate that heterojunction diodes overcome above...

Three-fold symmetrically distributed GaN nanowire (NW) arrays have been epitaxially grown on GaN/sapphire substrates. The NW possesses a triangular cross section enclosed by (0001), (2112), and (2112) planes, the angle between substrate surface is approximately 62 degrees . produce negative output voltage pulses when scanned conductive atomic force microscope in contact mode. average of piezoelectric was about -20 mV, while 5-10% NWs had voltages exceeding -(0.15-0.35) V. are highly stable...

In this work, we show that the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky Barrier Diode (SBD) can perform beyond 1-D unipolar limit of SiC and GaN by employing a deep trench with filled thick SiO layer structure to enhance breakdown voltage...

We report on achieving high-performance β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> power devices through the incorporation of p-type NiO xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> . p-n heterojunction (HJ) diodes, as well novel HJ gate (G) field-effect-transistors (HJ-FETs), have all demonstrated state-of-the-art Baliga's figure merit (P-FOM). The diode is introduced...

In-memory computing featuring a radical departure from the von Neumann architecture is promising to substantially reduce energy and time consumption for data-intensive computation. With increasing challenges facing silicon complementary metal-oxide-semiconductor (CMOS) technology, developing in-memory hardware would require different platform deliver significantly enhanced functionalities at material device level. Here, we explore dual-gate two-dimensional ferroelectric field-effect...

Ga2O3 Schottky photodiodes are being actively explored for solar-blind ultraviolet (SBUV) detection, owing to the fast photoresponse and easy fabrication. However, their performance, limited by contact, mostly underperforms expectations. Herein, a Ni/β-Ga2O3 vertical barrier diode (SBD) with an ultrathin anode electrode is demonstrated. Through simple surface treatment, quality of junction improved, thus detection performance. The dark current reaches record less than 12 fA. Benefiting from...

We have investigated the effects of piezoelectric potential in a ZnO nanowire on transport characteristics based field effect transistor through numerical calculations and experimental observations. Under different straining conditions including stretching, compressing, twisting, their combination, is created throughout to modulatealternate property metal-ZnO contacts, resulting switch between symmetric asymmetric contacts at two ends, or even turning an Ohmic contact type into diode. The...

Piezoelectric potential of a InN nanowire (NW) growing along [0110] can be positive, negative, and zero depending on the direction applied transverse force. By measuring output voltage InN-NW-based nanogenerator, about 40% to 55% voltages are within range -1 -20 mV, 25% 30% would exceed -100 mV. Some could reach magnitude -1000 showing its great for fabricating high-output nanogenerators.

Gate-recessed AlGaN/AlN/GaN metal–oxide–semiconductor heterostructure high-mobility transistors (MOS-HEMTs) on SiC substrate are fabricated. The device with a gate length of 0.6 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX"> $\mu\hbox{m}$</tex></formula> and periphery 100 Notation="TeX">$\mu\hbox{m}$</tex> </formula> exhibits maximum dc drain current density 1.59 A/mm at Notation="TeX">$V_{\rm GS} =...

In this article, we report on demonstrating the first vertical β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> junction barrier Schottky (JBS) diode with implementation of thermally oxidized p-type NiO to compensate for dilemma forfeit . With wide-bandgap NiOx, JBS diodes an area 100 × μm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> achieve a breakdown voltage (BV) and...

We propose a photonic spiking neural network (SNN) consisting of neurons based on vertical-cavity surface-emitting lasers (VCSELs). The spike timing dependent plasticity (STDP) is implemented in semiconductor optical amplifier (VCSOA). A versatile computational model the SNN presented rate equation models. Through numerical simulation, pattern learning and recognition task performed STDP. results show that post-synaptic (PST) eventually converged iteratively to first input via unsupervised...

This work reports on implementing Mg implanted Edge Termination (ET), a simple but very useful technique to increase the breakdown voltage (BV) of vertical β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky barrier diode (SBD). With this ET, SBD demonstrates reverse blocking 1.55 kV and low specific on-resistance (RON,sp) 5.1 mQ · cm <sup...

Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO)-based ferroelectric-field-effect transistor (FeFET) with a ZrO seed layer was demonstrated. It found that the could effectively improve ferroelectric properties of (hafnium zirconium oxide) HZO thin film. The remanent polarization and coercive voltage metal-ferroelectric-insulator-semiconductor (MFIS) structure were larger...

In this work, we have demonstrated highperformance lateral β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> metal-oxide-semiconductor field-effect transistors (MOSFETs) with state-of-art power figure-of-merit (P-FOM) and breakdown voltage (BV) by adopting a T-shape gate field-plate source connected structures. Depletion-mode (D-mode) MOSFETs gate-to-drain distance (LGD) of 4.8...

Transition metal dichalcogenides (TMDs) have attracted considerable interest for exploration of next-generation electronics and optoelectronics in recent years. Fabrication in-plane lateral heterostructures between TMDs has opened up excellent opportunities engineering two-dimensional materials. The creation high quality with a facile method is highly desirable but it still remains challenging. In this work, we demonstrate one-step growth the construction high-quality MoS2-WS2...

In this report, we demonstrate high spectral responsivity (SR) solar blind deep ultraviolet (UV) β-Ga2O3 metal-semiconductor-metal (MSM) photodetectors grown by the mist chemical-vapor deposition (Mist-CVD) method. The thin film was on c-plane sapphire substrates, and fabricated MSM PDs with Al contacts in an interdigitated geometry were found to exhibit peak SR>150A/W for incident light wavelength of 254 nm at a bias 20 V. devices exhibited very low dark current, about 14 pA V, showed sharp...

In this paper, we show that high-performance β-Ga2O3 hetero-junction barrier Schottky (HJBS) diodes with various periodic fin widths of 1.5/3/5 μm are demonstrated the incorporation p-type NiOx. The HJBS diode achieves a low specific on-resistance (Ron,sp) 1.94 mΩ cm2 breakdown voltage 1.34 kV at width 3 μm, translating to direct-current Baliga's power figure merit (PFOM) 0.93 GW/cm2. addition, find by shrinking width, reverse leakage current is minimized due enhanced sidewall depletion...

β-Ga2O3 is a wide-band-gap semiconductor having great potential for applications in electronics and optoelectronics. Here, we predict the natural physical properties of atomic monolayer bilayer Ga2O3 using density functional theory. Although not van der Waals material, it found that two-dimensional (2D) stable can be fabricated by exfoliation. Different from unpassivated 2D Ga2O3, H-passivated possesses obvious quantum confinement effects. Remarkably, show larger indirect band gaps (6.42...

We propose computing primitive for an all-optical spiking neural network (SNN) based on vertical-cavity surface-emitting lasers (VCSELs) supervised learning by using biologically plausible mechanisms. The spike-timing-dependent plasticity (STDP) model was established the dynamics of semiconductor optical amplifier (VCSOA) subject to dual-optical pulse injection. neuron-synapse self-consistent unified SNN developed, which enables reproducing essential neuron-like and STDP function. Optical...

The HfO2-based ferroelectric field effect transistor (FeFET) with a metal/ferroelectric/insulator/semiconductor (MFIS) gate stack is currently being considered as possible candidate for high-density and fast write speed non-volatile memory. Although the retention performance of FeFET MFIS could satisfy requirements practical applications, its memory window (MW) reliability respect to endurance should be further improved. This work investigates advantage employing ZrO2 seed layers on MW,...

This work acquires a vertical β-Ga2O3 Schottky barrier diode (SBD) with the advanced termination structure of p-type NiOx and n-type heterojunctions coupled field plate structures to alleviate crowding electric field. A Ga2O3 SBD delivers an average breakdown voltage 1860 V specific on-resistance 3.12 mΩ cm2, yielding state-of-the-art direct-current Baliga's power figure merit 1.11 GW/cm2 at anode area 2.83 × 10−5 cm2. In addition, same fabrication process large 1.21 10−2 cm2 also presents...

Abstract In‐sensor computing with visual information, which can integrate photo‐sensing, data storage, and computation functions within the same physical element, has promised a fundamentally different architecture for future machine vision technology extreme energy time efficiency. The elementary devices required to fulfil goal of such new sensory scheme would demand bold functional variation existing sensor processing hardware. Here, van der Waals (vdW) heterostructure‐based optoelectronic...

Abstract Due to the suitable bandgap, superior chemical and physical properties, β‐phase gallium oxide (β‐Ga 2 O 3 ) has great potential fabricate deep ultraviolet solar‐blind photodetectors (DUV PDs). However, low material quality, high growth cost, insufficient device performance, are urgently required be solved for practical applications. In this work, by using a vacuumfree, low‐cost mist vapor deposition method, quality β‐Ga single crystal films successfully heteroepitaxially grown on...