A5100438191- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Interconnection Networks and Systems
- Parallel Computing and Optimization Techniques
- VLSI and Analog Circuit Testing
- Embedded Systems Design Techniques
- ZnO doping and properties
- Integrated Circuits and Semiconductor Failure Analysis
- Radio Frequency Integrated Circuit Design
- Low-power high-performance VLSI design
- Silicon Carbide Semiconductor Technologies
- Advanced Photocatalysis Techniques
- Physical Unclonable Functions (PUFs) and Hardware Security
- Network Packet Processing and Optimization
- Digital Filter Design and Implementation
- Semiconductor materials and devices
- Image and Signal Denoising Methods
- Advanced Data Storage Technologies
- Supercapacitor Materials and Fabrication
- Advanced Algorithms and Applications
- Electronic and Structural Properties of Oxides
- Advanced Sensor and Control Systems
- Photonic and Optical Devices
- Gut microbiota and health
- Advancements in PLL and VCO Technologies
Xidian University
2012-2025
China Medical University
2022-2025
Zhejiang University of Water Resource and Electric Power
2023
Nanjing University
2021
National Center for Nanoscience and Technology
2015
Wenzhou Medical University
2013
Saitama University
2002
In this work, we show that the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky Barrier Diode (SBD) can perform beyond 1-D unipolar limit of SiC and GaN by employing a deep trench with filled thick SiO layer structure to enhance breakdown voltage...
This work reports on implementing Mg implanted Edge Termination (ET), a simple but very useful technique to increase the breakdown voltage (BV) of vertical β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky barrier diode (SBD). With this ET, SBD demonstrates reverse blocking 1.55 kV and low specific on-resistance (RON,sp) 5.1 mQ · cm <sup...
In this paper, we show that high-performance β-Ga2O3 hetero-junction barrier Schottky (HJBS) diodes with various periodic fin widths of 1.5/3/5 μm are demonstrated the incorporation p-type NiOx. The HJBS diode achieves a low specific on-resistance (Ron,sp) 1.94 mΩ cm2 breakdown voltage 1.34 kV at width 3 μm, translating to direct-current Baliga's power figure merit (PFOM) 0.93 GW/cm2. addition, find by shrinking width, reverse leakage current is minimized due enhanced sidewall depletion...
In this letter, we report the achievement of a high-performance lateral GaN Schottky barrier diode (SBD) on silicon substrate with low turn- ON voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{ \mathrm{ON}}$ </tex-math></inline-formula> ) 0.35 V and tungsten (W) as anode. Non-field-plated SBDs anode–cathode distances notation="LaTeX">${L}_{\text {AC}}$ 6, 10, 15, 20, notation="LaTeX">$25~\mu...
We report on demonstrating the first Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.05</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.95</sub> N-channel enhancement-mode (E-mode) p-GaN gate injection transistors (GITs) with an adjustable threshold voltage ( <inline-formula xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\textsf {T}}$ </tex-math></inline-formula> ) of 4–7-V by controlling number...
In this letter, we report on demonstrating a Schottky barrier diode (SBD) with high reverse blocking voltage by incorporating an ultra-wide bandgap semiconductor Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.85</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.15</sub> N channel. Benefited from the lower activation energy of Si in GaN, net carrier concentration can be essentially enhanced to 2 × cm <sup...
In this paper, AlGaN/GaN high-electron mobility transistors (HEMTs) with different fin configurations are fabricated and analyzed. Through S-parameter measurements modeling of the designed devices, a detailed RF investigation on small-signal model parameters is performed under biasing conditions. Good agreements between measured simulated scattering up to 40 GHz illustrate validity accuracy model. The influence structures linearity improvement examined, can help improve frequency...
In this paper, high performance lateral Al0.85Ga0.15N Schottky barrier diodes (SBDs) with a field-plate structure and heavily doped GaN cap layer in the Ohmic region are demonstrated. Employing rather than AlN for channel effectively reconciles tension between electron mobility dopant activation caused by material dilemma. The SBD an anode-cathode spacing (LAC) of 20 μm achieves specific on-resistance (Ron,sp) 0.19 Ω·cm2 breakdown voltage exceeding 3 kV, rendering Baliga's power figure merit...
The combined effects of proton irradiation and forward gate-bias stress on the interface traps AlGaN/GaN heterostructure have been studied in this article. It is found that effect shift flat band voltage <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{\mathrm {FB}}$ </tex-math></inline-formula> independent. By utilizing frequency-dependent conductance technique, it trap density...
High speed, low power and compatibility with standard technology Static random access memory (SRAM) is essential for system on chip (SoC) technology. In this paper, we first present a 6T-SRAM (1WR) two types of 8T-SRAM cell(2WR 1W1R). After that how the (1W1R) cell work external unit explained, compare SNM sensitivity write/read operations time 1WR 1W1R cell.
This paper proposes a novel Shared-Resource routing scheme, SRNoC, that not only enhances network transmission performance, but also provides high efficient load-balance solution for NoC design. The proposed SRNoC scheme expands the design space and effective framework. mainly consists of topology algorithm. is based on mechanism, in which routers are divided into groups each group share set specified link resource. Because usage Shared Resource could effectively distribute workload...