Abstract The development of high-end manufacturing has driven the demand for vibration monitoring sensors, which often require simultaneous three-axis acceleration. Additionally, MEMS accelerometers used should have an adequate range and bandwidth. First, we designed a single-chip triaxial accelerometer. This design is compact, low cross-axis sensitivity, independent each axis structure can also maximize resonance frequency effectively. Then, adjusted structural parameters through parametric...

We study topological states of matter in quasicrystals, which do not rely on crystalline order. In the absence a band-structure description and spin-orbit coupling, we show that three-dimensional quasicrystal can nevertheless form insulator. It relies combination noncrystallographic rotational symmetry quasicrystals electronic orbital space symmetry, is quasicrystalline counterpart The resulting state obeys nontrivial twisted bulk-boundary correspondence lacks good metallic surface. surface...

Interface traps in submicron buried-channel LDD pMOSTs, generated under different stress conditions, are investigated by the direct-current current-voltage (DCIV) technique. Two peaks C and D DCIV spectrum found corresponding to interface channel region respectively. The new results clarify certain issues of underlying mechanisms involved on hot-carrier degradation pMOSTs. Under hot electron injection trapping oxide occurs for all stressing gate voltage. However, induced trap spatial...

Abstract Understanding fluctuation phenomena plays a dominant role in the development of many-body physics. The time evolution entanglement is essential to broad range subjects physics, ranging from exotic quantum matter thermalization. Stemming various dynamical processes information, fluctuations differ conceptually out-of-equilibrium traditional physical quantities. Their studies remain elusive. Here we uncover an emergent random structure wavefunction two classes integrable—either...

A simple new DC technique is developed to extract the gate bias dependent effective channel mobility (u/sub eff/) and series resistances (R/sub s/ R/sub d/) of graded junction n- p-channel MOSFETs. This found be accurate for devices with differing lengths also after nonuniform hot-carrier degradation. The parameter values extracted provide further insight into damage mechanisms stressed nMOSFETs are usable in circuit reliability simulation. especially useful optimization resistant structures...

We study topological states of matter in quasicrystals, which do not rely on crystalline orders. In the absence a bandstructure description and spin-orbit coupling, we show that three-dimensional quasicrystal can nevertheless form insulator. It relies combination noncrystallographic rotational symmetry quasicrystals electronic orbital space symmetry, is quasicrystalline counterpart The resulting state obeys non-trivial twisted bulk-boundary correspondence lacks good metallic surface. surface...

Entanglement fluctuations associated with Schr\"{o}dinger evolution of wavefunctions offer a unique perspective on various fundamental issues ranging from quantum thermalization to state preparation in devices. Very recently, subset present authors have shown that class free-fermion lattice models and interacting spin chains, entanglement dynamics enters into new regime at long time, probes displaying persistent temporal fluctuations, whose statistics falls the seemingly disparate paradigm...

Hot-carrier injection is observed increasingly to degrade the subthreshold characteristics with scaling of LDD PMOSFETs. A physical current model applied fresh and hot-carrier-stressed submicrometre channel length devices. The reduction subsequently extracted. An empirical relationship developed characterize degradation parameters as a function stress time length. With use this relationship, we can determine device lifetime or predict minimum allowable (for certain percentage lifetime) that...

A previously developed drain-current-conductance method (DCCM) is extended to investigate the effect of back-bias on LATID NMOSFETs. For same effective gate overdrive, extracted drain and source series resistances increase as increased. Two-dimensional device simulation showed that increased results in reduced current contour values at drain/source regions a result resistances.

With the ability to independently extract series drain resistance and effective channel mobility from a single MOSFET device, individual effect of these two parameters on hot-carrier degradation in graded-drain nMOSFETs was separated investigated. A self-limiting behaviour due trapped charge interface state generation observed. three-stage model proposed explain observed behaviour.

This article describes the design and performance of an integrated characterization system for physical microscopic analysis macroscopic reliability MOSFETs under hot-carrier stressing conditions. The includes photon emission localization emitting device(s), spectroscopic measurement emitted light, lifetime estimation, charge-pumping profiling, gated-diode measurement, capacitance-voltage flicker-noise characterization.

Hot-carrier injection is observed to increasingly degrade the subthreshold characteristics with scaling of LDD PMOSFETs. A physical current model applied fresh and hot-carrier stressed submicrometer channel length devices. The generated interface traps reduction are subsequently extracted. An empirical developed characterize degradation parameters as a function stress time length. With use this model, we can determine hence predict minimum allowable (for certain percentage lifetime) that...

Photon emission spectra of double-diffused drain (DDD) and large-angle-tilt-implanted-drain (LATID) submicron n-channel MOSFETs after hot-carrier stressing under maximum substrate current gate conditions were investigated. The results showed that the difference spectra, obtained by subtracting devices' pre-stress from post-stress could be used for distinguishing effects interface states trapped charges. Interface cause enhanced surface scattering therefore increase efficiency photon while...

Understanding fluctuation phenomena plays a dominant role in the development of many-body physics. The time evolution entanglement is essential to broad range subjects physics, ranging from exotic quantum matter thermalization. Stemming various dynamical processes information, fluctuations differ conceptually out-of-equilibrium traditional physical quantities. Their studies remain elusive. Here we uncover an emergent random structure wavefunction two classes integrable -- either interacting...

A direct-current current-voltage (DCIV) technique for the measurement of interface traps and oxide charges in LDD pMOSFETs with n-well p-substrate is demonstrated. The trap densities are monitored using bulk current MOS transistor. DCIV results after substrate hot carrier injection channel presented analyzed. There two peaks spectrum injection, corresponding to hot-carrier-generated located region lightly-doped drain (LDD) respectively. stress-induced charge shifts peaks.

Under maximum substrate current stress (i.e. ), the hot-carrier induced degradation of tungsten polycide gate n-MOSFETs in linear drain and transconductance is lower, shift threshold voltage higher than that polysilicon (PolySi) n-MOSFETs. However, under showed PolySi devices. In contrast, p-MOSFETs compared with both ) stresses. An explanation, substantiated by charge-pumping measurements, proposed to explain phenomena observed. The lifetime found limit operation CMOS circuits.

Hot-carrier injection is shown to degrade the subthreshold operation of LDD PMOSFETs. observed increasingly leakage and slope as PMOSFETs are scaled smaller dimensions. A physical model, based on channel shortening effect degraded PMOSFETs, used model degradation characteristics observed. Degradation in expected limit life its length reduced half-a-micrometer.

We present a new measurement technique-the drain current-conductance method (DCCM) to extract the gate-bias dependent effective channel mobility (/spl mu//sub eff/) and series resistances (R/sub s/ R/sub d/) of drain-engineered MOSFETs. Experimental verification for devices with differing lengths after hot-carrier stresses showed that this technique is accurate effective. The parameters extracted has provided further insight into asymmetries graded junctions, damage mechanisms degraded

The channel hot-carrier induced degradation of polysilicon (PolySi) and tungsten polycide (WSi/sub x/) gate nMOSFETs pMOSFETs are studied using the charge-pumping (CP) technique. WSi/sub x/ under maximum substrate current (I/sub sub,max/) stress (V/sub g//spl sime/V/sub d//2) degraded to a smaller extent when compared PolySi nMOSFETs. From CP measurements, it is confirmed that fewer interface traps (N/sub it/) generated for devices. However, g,max/) g/=V/sub d/), showed higher than In...

The effective mobility of NMOSFETs with different plasma damage is characterized by a new technique. applicability this technique verified. observed to be more sensitive than the maximum linear transconductance as measure quality Si-Si02 interface.