A5005918705- ZnO doping and properties
- Ga2O3 and related materials
- Semiconductor materials and devices
- Radiation Effects in Electronics
- Peripheral Neuropathies and Disorders
- Autoimmune Neurological Disorders and Treatments
- RNA regulation and disease
- Head and Neck Surgical Oncology
- Vascular Malformations and Hemangiomas
- Semiconductor materials and interfaces
- Diabetic Foot Ulcer Assessment and Management
- Advanced Photocatalysis Techniques
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Carbide Semiconductor Technologies
- Burn Injury Management and Outcomes
- Bone fractures and treatments
- Electronic and Structural Properties of Oxides
- Vascular Malformations Diagnosis and Treatment
Inner Mongolia Medical University
2025
Xiangtan University
2024-2025
Chinese PLA General Hospital
2025
China University of Political Science and Law
2017-2019
In order to obtain the Single-Event Burnout (SEB) characteristics of diamond Schottky barrier diode (SBD), two-dimensional model device was established by using TCAD simulation tool, and positive experimental were used calibrate model. On this basis, SBD devices irradiated high-energy Ge ions studied combining SRIM software, influence reverse bias voltage, linear energy transfer (LET) value, depth incidence on single event effect during irradiation process revealed. The results show that...
In this Letter, the impact of 20 MeV proton irradiation on β-Ga2O3 Schottky barrier diodes (SBDs) with field plates has been investigated. After fluences 2 × 1012 and 5 p/cm2, forward current density (JF) decreased from 294.0 to 250.5 192.0 A/cm2, respectively. The turn-on voltage (Von) increased 0.78 0.82 0.84 V, as measured by current–voltage (I–V) testing. Capacitance–voltage (C–V) measurements showed that net carrier concentration in lightly doped drift region 1.95 1016 1.83 1.38 cm−3...
In this article, the impact of 20 MeV proton irradiation on NiOx/β-Ga2O3 p–n diodes has been investigated. After with a fluence 2 × 1012 p/cm2, forward current density (JF) decreased by 44.1% from 93.0 to 52.0 A/cm2, and turn-on voltage (Von) increased 1.55 1.68 V based current–voltage (I–V) measurements. Moreover, capacitance–voltage (C–V) measurements indicated that net carrier concentration in β-Ga2O3 lightly doped drift region was reduced 1.95 1016 1.86 cm−3 after irradiation. The effect...
To explore the differences in repair process of skin and skeletal muscle after contusion caused by blunt force attack with different heights.Three degrees were performed on SD rats' right hind limbs a designed free-dropping device falling from 15, 30 50 cm heights, which as main consideration factor for degree injury. The at 6 h, 24 3 d, 7 d 13 observed using routine histological methods.Hematoma within and/or was found three heights. processes similar h contusion. However, increase height,...
Objective To explore the application of neutrophil migration distance for wound age estimation skeletal muscles in rats, and to provide methodological basis follow-up study future. Methods The muscle contusion model was established control group 2, 4, 6 h post-traumatic groups were set. law response neutrophils that participated inflammation after injury detected by immunohistochemical staining, relationship between time TissueFAXS PLUS software. Results obviously infiltrated with 2-6...